Abstract: An optical pulse measuring method measuring an optical pulse generated from a pulse light source is provided. The method includes: splitting the optical pulse and then focusing them at a measuring point, so as to generate gas plasma by the autocorrelation of the split optical pulses; receiving the sound signal from the gas plasma and generate a plasma sound signal; and using the plasma sound signal to calculate the characteristics of the optical pulse. A measuring device is also provided.

Abstract: An optical pulse measuring method measuring an optical pulse generated from a pulse light source is provided. The method includes: splitting the optical pulse and then focusing them at a measuring point, so as to generate gas plasma by the autocorrelation of the split optical pulses; receiving the sound signal from the gas plasma and generate a plasma sound signal; and using the plasma sound signal to calculate the characteristics of the optical pulse. A measuring device is also provided.

Abstract: Methods for treating a disorder associated with immunoglobulin E (IgE) in a subject with antibodies capable of binding to the C?mx domain of a membrane-bound IgE. The subject can be administered with at least two doses of the antibody, the two doses being at least three months apart.

Abstract: Methods for treating a disorder associated with immunoglobulin E (IgE) in a subject with antibodies capable of binding to the C?mx domain of a membrane-bound IgE. The subject can be administered with at least two doses of the antibody, the two doses being at least three months apart.

Abstract: An optical pulse measuring method measuring an optical pulse generated from a pulse light source is provided. The method includes: splitting the optical pulse and then focusing them at a measuring point, so as to generate gas plasma by the autocorrelation of the split optical pulses; receiving the sound signal from the gas plasma and generate a plasma sound signal; and using the plasma sound signal to calculate the characteristics of the optical pulse. A measuring device is also provided.

Abstract: An optical pulse measuring method measuring an optical pulse generated from a pulse light source is provided. The method includes: splitting the optical pulse and then focusing them at a measuring point, so as to generate gas plasma by the autocorrelation of the split optical pulses; receiving the sound signal from the gas plasma and generate a plasma sound signal; and using the plasma sound signal to calculate the characteristics of the optical pulse. A measuring device is also provided.

Abstract: Methods for treating a disorder associated with immunoglobulin E (IgE) in a subject with antibodies capable of binding to the C?mx domain of a membrane-bound IgE. The subject can be administered with at least two doses of the antibody, the two doses being at least three months apart.

Abstract: An optical pulse measuring method measuring an optical pulse generated from a pulse light source is provided. The method includes: splitting the optical pulse and then focusing them at a measuring point, so as to generate gas plasma by the autocorrelation of the split optical pulses; receiving the sound signal from the gas plasma and generate a plasma sound signal; and using the plasma sound signal to calculate the characteristics of the optical pulse. A measuring device is also provided.

Abstract: A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or elements) selected from the group which consists of element of substrate (21) and elements which forms a solid solution with the substrate (21). In particular, in the case of silicon substrate, the compound may comprise BSi2, B2Si, B4Si and B6Si. The use of such compounds enables the highly reliable contacts to be formed on the p-doped regions.

Abstract: A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or elements) selected from the group which consists of element of substrate (21) and elements which forms a solid solution with the substrate (21). In particular, in the case of silicon substrate, the compound may comprise BSi2, B2Si, B4Si and B6Si. The use of such compounds enables the highly reliable contacts to be formed on the p-doped regions.

Abstract: A method for manufacturing shallowly doped semiconductor devices. In the preferred embodiment, the method includes the steps of: (a) providing a substrate where the substrate material is represented by the symbol Es (element of the substrate); and (b) implanting the substrate with an ion compound represented by the symbol E1.sub.x Ed.sub.y, where E1 represents an element having high solubility in the substrate material with minimal detrimental chemical or electrical effects and can be the same element as the substrate element, Ed (dopant element) represents an element which is an electron acceptor or donor having high solubility limit in the substrate material, and x and y indicate the number of respective E1 and Ed atoms in the ion compound.