Patents by Inventor Tien-Wei Chiang

Tien-Wei Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10971544
    Abstract: Methods for forming a magneto-resistive memory device and a capacitor in an interconnect structure are disclosed herein. An exemplary method includes forming a first level interconnect metal layer and a second level interconnect metal layer of an interconnect structure. The method further includes simultaneously forming a first plurality of layers in a first region of the interconnect structure and a second plurality of layers in a second region of the interconnect structure, wherein the first plurality of layers and the second plurality of layers are disposed between the first level interconnect metal layer and the second level interconnect metal layer. The first plurality of layers is configured as a magneto-resistive memory device. The second plurality of layers is configured as the capacitor. The magneto-resistive memory device and the capacitor are each coupled to the first level interconnect metal layer and the second level interconnect metal layer.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: April 6, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
    Inventors: Chung-Cheng Chou, Ya-Chen Kao, Tien-Wei Chiang
  • Patent number: 10937957
    Abstract: Some embodiments relate to a magnetoresistive random-access memory (MRAM) cell. The cell includes a bottom electrode having a central bottom electrode portion surrounded by a peripheral bottom electrode portion. Step regions of the conductive bottom electrode couple the central and peripheral bottom electrode portions to one another such that an upper surface of the central portion is recessed relative to an upper surface of the peripheral portion. A magnetic tunneling junction (MTJ) has MTJ outer sidewalls which are disposed over the bottom central electrode portion and which are arranged between the step regions. A top electrode is disposed over an upper surface of the MTJ. Other devices and methods are also disclosed.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: March 2, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Harry-Hak-Lay Chuang, Hung Cho Wang, Tien-Wei Chiang, Wen-Chun You
  • Publication number: 20210043582
    Abstract: The present disclosure provides a package structure, including a mounting pad having a mounting surface, a semiconductor chip disposed on the mounting surface of the mounting pad, wherein the semiconductor chip includes: a first surface perpendicular to a thickness direction of the semiconductor chip, a second surface opposite to the first surface and facing the mounting surface, and a third surface connecting the first surface and the second surface, a magnetic device disposed in the semiconductor chip, a first magnetic field shielding at least partially surrounding the third surface, a second magnetic field shielding, including a top surface facing the second surface of the semiconductor chip, and a molding surrounding the semiconductor chip, wherein the entire top surface of the second magnetic field shielding is in direct contact with the molding.
    Type: Application
    Filed: October 23, 2020
    Publication date: February 11, 2021
    Inventors: HARRY-HAK-LAY CHUANG, CHIA-HSIANG CHEN, MENG-CHUN SHIH, CHING-HUANG WANG, TIEN-WEI CHIANG
  • Publication number: 20200411449
    Abstract: Devices and methods are provided in which a magnetic sensitive semiconductor chip, such as a magnetoresistive random-access memory (MRAM) chip, is shielded from magnetic interference by a magnetic shielding layer. A device includes a housing that defines an exterior surface. A semiconductor chip is disposed within the housing, and the semiconductor chip is spaced apart from the exterior surface of the housing. A magnetic shielding layer is spaced apart from the semiconductor chip by a distance less than 5 mm.
    Type: Application
    Filed: December 11, 2019
    Publication date: December 31, 2020
    Inventors: Harry-Hak-Lay Chuang, Tien-Wei Chiang, Chia-Hsiang Chen, Meng-Chun Shih, Ching-Huang Wang
  • Patent number: 10877089
    Abstract: In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.
    Type: Grant
    Filed: May 14, 2019
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Harry-Hak-Lay Chuang, Chih-Yang Chang, Ching-Huang Wang, Tien-Wei Chiang, Meng-Chun Shih, Chia Yu Wang
  • Patent number: 10878928
    Abstract: Various embodiments of the present application are directed towards a one-time-programmable (OTP) implementation using magnetic junctions. In some embodiments, an array comprises multiple magnetic junctions in multiple columns and multiple rows, and the magnetic junctions comprise a first magnetic junction and a second magnetic junction. The first and second magnetic junctions comprise individual top ferromagnetic elements and individual bottom ferromagnetic elements, and further comprise individual barrier elements between the top and bottom ferromagnetic elements. A first barrier element of the first magnetic junction electrically separates first top and bottom ferromagnetic elements of the first magnetic junction. A second barrier element of the second magnetic junction has undergone breakdown, such that it has defects defining a leakage path between second top and bottom ferromagnetic elements of the second magnetic junction.
    Type: Grant
    Filed: May 13, 2019
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Harry-Hak-Lay Chuang, Tien-Wei Chiang, Wen-Chun You, Yi-Chieh Chiu, Yu-Lin Chen, Jian-Cheng Huang, Chang-Hung Chen
  • Patent number: 10868234
    Abstract: A storage device includes: a plurality of first magnetic tunnel junction (MTJ) cells disposed on a first portion of a substrate; and a plurality of second MTJ cells disposed on a second portion different from the first portion of the substrate; wherein each of the plurality of first MTJ cells has a first cross-sectional surface area viewing from a top of the substrate, each of the plurality of second MTJ cells has a second cross-sectional surface area viewing from the top of the substrate, and the second cross-sectional surface area is greater than the first cross-sectional surface area.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Harry-Hak-Lay Chuang, Chang-Hung Chen, Kuei-Hung Shen, Wen-Chun You, Tien-Wei Chiang
  • Patent number: 10818609
    Abstract: The present disclosure provides a package structure, including a semiconductor chip having a magnetic device, wherein the semiconductor chip includes a first surface perpendicular to a thickness direction of the semiconductor chip, a second surface opposite to the first surface, and a third surface connecting the first surface and the second surface, and a first magnetic field shielding at least partially surrounding the third surface.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: October 27, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Harry-Hak-Lay Chuang, Chia-Hsiang Chen, Meng-Chun Shih, Ching-Huang Wang, Tien-Wei Chiang
  • Publication number: 20200194662
    Abstract: A storage device includes: a plurality of first magnetic tunnel junction (MTJ) cells disposed on a first portion of a substrate; and a plurality of second MTJ cells disposed on a second portion different from the first portion of the substrate; wherein each of the plurality of first MTJ cells has a first cross-sectional surface area viewing from a top of the substrate, each of the plurality of second MTJ cells has a second cross-sectional surface area viewing from the top of the substrate, and the second cross-sectional surface area is greater than the first cross-sectional surface area.
    Type: Application
    Filed: December 12, 2018
    Publication date: June 18, 2020
    Inventors: HARRY-HAK-LAY CHUANG, CHANG-HUNG CHEN, KUEI-HUNG SHEN, WEN-CHUN YOU, TIEN-WEI CHIANG
  • Patent number: 10665321
    Abstract: The disclosure is related a method for testing a magnetic memory device and a test apparatus are provided. In some exemplary embodiments, the method includes at least the following steps. The magnetic memory device is initialized by applying a first magnetic field to force write a first data to the magnetic memory device. Then, a second magnetic field is applied to the magnetic memory device. Second data may be obtained from the magnetic memory device by performing a chip probing process. Accordingly, performance of the magnetic memory device may be determined based on the second data.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: May 26, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Yu Wang, Ching-Huang Wang, Chun-Jung Lin, Tien-Wei Chiang, Meng-Chun Shih, Kuei-Hung Shen
  • Publication number: 20200127049
    Abstract: The present disclosure provides a semiconductor structure including a substrate, a transistor region having a gate over the substrate, a first doped region, and a second doped region at least partially in the substrate, and a contact plug directly over the gate, a first metal interconnect composed of copper over the transistor region, and a magnetic tunneling junction (MTJ) directly over the contact plug and under the first metal interconnect.
    Type: Application
    Filed: December 17, 2019
    Publication date: April 23, 2020
    Inventors: ALEXANDER KALNITSKY, HARRY-HAK-LAY CHUANG, SHENG-HAUNG HUANG, TIEN-WEI CHIANG
  • Publication number: 20200119091
    Abstract: A semiconductor device includes a first dielectric layer, a second dielectric layer and a memory device. The second dielectric layer includes a first layer and a second layer. The memory device includes a first conductive structure under the first dielectric layer, a second conductive structure over the second dielectric layer, and a memory cell between the first and the second dielectric layers. The memory cell includes a bottom electrode via, a bottom electrode over the bottom electrode via, a top electrode over the bottom electrode, a top electrode via over the top electrode, and a MTJ between the top electrode and the bottom electrode. The second layer of the second dielectric layer surrounds sidewalls of the top electrode via entirely. The first layer of the second dielectric layer surrounds sidewalls of the bottom electrode entirely, sidewalls of the MTJ entirely, and sidewalls of the top electrode entirely.
    Type: Application
    Filed: December 13, 2019
    Publication date: April 16, 2020
    Inventors: HARRY-HAK-LAY CHUANG, WU-CHANG TSAI, TIEN-WEI CHIANG
  • Publication number: 20200096559
    Abstract: In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.
    Type: Application
    Filed: May 14, 2019
    Publication date: March 26, 2020
    Inventors: Harry-Hak-Lay Chuang, Chih-Yang Chang, Ching-Huang Wang, Tien-Wei Chiang, Meng-Chun Shih, Chia Yu Wang
  • Publication number: 20200097255
    Abstract: In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data sate. The first random bit is then read from the MRAM cell.
    Type: Application
    Filed: June 7, 2019
    Publication date: March 26, 2020
    Inventors: Harry-Hak-Lay Chuang, Chih-Yang Chang, Ching-Huang Wang, Chih-Hui Weng, Tien-Wei Chiang, Meng-Chun Shih, Chia Yu Wang, Chia-Hsiang Chen
  • Publication number: 20200098440
    Abstract: Various embodiments of the present application are directed towards a one-time-programmable (OTP) implementation using magnetic junctions. In some embodiments, an array comprises multiple magnetic junctions in multiple columns and multiple rows, and the magnetic junctions comprise a first magnetic junction and a second magnetic junction. The first and second magnetic junctions comprise individual top ferromagnetic elements and individual bottom ferromagnetic elements, and further comprise individual barrier elements between the top and bottom ferromagnetic elements. A first barrier element of the first magnetic junction electrically separates first top and bottom ferromagnetic elements of the first magnetic junction. A second barrier element of the second magnetic junction has undergone breakdown, such that it has defects defining a leakage path between second top and bottom ferromagnetic elements of the second magnetic junction.
    Type: Application
    Filed: May 13, 2019
    Publication date: March 26, 2020
    Inventors: Harry-Hak-Lay Chuang, Tien-Wei Chiang, Wen-Chun You, Yi-Chieh Chiu, Yu-Lin Chen, Jian-Cheng Huang, Chang-Hung Chen
  • Publication number: 20200028072
    Abstract: Some embodiments relate to a magnetoresistive random-access memory (MRAM) cell. The cell includes a bottom electrode having a central bottom electrode portion surrounded by a peripheral bottom electrode portion. Step regions of the conductive bottom electrode couple the central and peripheral bottom electrode portions to one another such that an upper surface of the central portion is recessed relative to an upper surface of the peripheral portion. A magnetic tunneling junction (MTJ) has MTJ outer sidewalls which are disposed over the bottom central electrode portion and which are arranged between the step regions. A top electrode is disposed over an upper surface of the MTJ. Other devices and methods are also disclosed.
    Type: Application
    Filed: September 30, 2019
    Publication date: January 23, 2020
    Inventors: Harry-Hak-Lay Chuang, Hung Cho Wang, Tien-Wei Chiang, Wen-Chun You
  • Publication number: 20200020642
    Abstract: The present disclosure provides a package structure, including a semiconductor chip having a magnetic device, wherein the semiconductor chip includes a first surface perpendicular to a thickness direction of the semiconductor chip, a second surface opposite to the first surface, and a third surface connecting the first surface and the second surface, and a first magnetic field shielding at least partially surrounding the third surface.
    Type: Application
    Filed: July 13, 2018
    Publication date: January 16, 2020
    Inventors: HARRY-HAK-LAY CHUANG, CHIA-HSIANG CHEN, MENG-CHUN SHIH, CHING-HUANG WANG, TIEN-WEI CHIANG
  • Publication number: 20200006245
    Abstract: In some embodiments, the present application provides a memory device. The memory device includes a chip that includes a magnetic random access memory (MRAM) cell. A magnetic-field-shielding structure at least partially surrounding the chip including a multilayer stack. The multilayer stack includes a magnetic layer and a dielectric layer. A first magnetic region is located inside an inner surface of the magnetic field shielding structure and a second magnetic region is located immediately outside an outer surface of the magnetic field shielding structure.
    Type: Application
    Filed: April 11, 2019
    Publication date: January 2, 2020
    Inventors: Harry-Hak-Lay Chuang, Tien-Wei Chiang, Kuo-An Liu, Chia-Hsiang Chen
  • Patent number: 10522591
    Abstract: The present disclosure provides one embodiment of a semiconductor structure that includes a first metal layer formed on a semiconductor substrate, wherein the first metal layer includes a first metal feature in a first region and a second metal feature in a second region; a second metal layer disposed on the first metal layer, wherein the second metal layer includes a third metal feature in the first region and a fourth metal feature in a second region; a magneto-resistive memory device sandwiched between the first metal feature and the third metal feature; and a capacitor sandwiched between the second metal feature and the fourth metal feature.
    Type: Grant
    Filed: October 30, 2013
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chung-Cheng Chou, Ya-Chen Kao, Tien-Wei Chiang
  • Publication number: 20190386061
    Abstract: In some embodiments, the present application provides a memory device. The memory device includes a chip that includes a magnetic random access memory (MRAM) cell. A magnetic-field-shielding structure comprised of conductive or magnetic material at least partially surrounds the chip. The magnetic-field-shielding structure comprises a sidewall region that laterally surrounds the chip, an upper region extending upward from the sidewall region, and a lower region extending downward from the sidewall region. At least one of the upper region and/or lower region terminate at an opening over the chip.
    Type: Application
    Filed: April 10, 2019
    Publication date: December 19, 2019
    Inventors: Kuo-An Liu, Chung-Cheng Wu, Harry-Hak-Lay Chuang, Gwan-Sin Chang, Tien-Wei Chiang, Zhiqiang Wu, Chia-Hsiang Chen