Abstract: An LED lamp is disclosed comprising an envelope coupled to a lamp base. The lamp base comprises an LED module, a driver circuitry, housing, and a socket cap. The envelope comprises one or more alternating grooves and ridges forming a corrugated sidewall. A portion of light emission from the LED may be intercepted by corrugated sidewalls and extracted out before exiting the top of envelope. The spatial light pattern may become more uniform using present LED lamps. In present LED lamps, the envelope may be flexible. The shape of envelope may be adjusted by folding or bending of corrugated sidewall. The light pattern of present LED lamps may be further tuned by folding or bending of the envelope in a desirable fashion. The present LED lamp may be manufactured using conventional methods and the cost may be further reduced.

Abstract: A light-emitting device is disclosed including a light emitting structure comprising a lower layer of the first conductivity type, an active layer, an upper layer of the second conductivity type; a first electrode connected to the lower layer of the first conductivity type; a second electrode connected to the upper layer of the second conductivity type. The light emitting structure is formed using a shell member, which comprises a planar portion and a shell portion. The extent of growth defects such as misfit dislocations is reduced and the extraction of light and heat is improved in the present device. The beam profile of the device may be altered by patterning the light emitting structure instead of shaping the entire chip. The device may be manufactured in a way more compatible with the established, cost-effective processing and packaging methods for large size wafers from the IC industry.

Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

Abstract: An LED light bulb includes a base, a light transmissive cover and upstanding light bars. The base is in electrical communication with a power source and has an axis and a periphery. The light transmissive cover is substantially mounted on the periphery. The upstanding light bars are mounted radially around the axis and located between the axis and the periphery. The upstanding light bars are arranged to substantially emit light inward to the axis.

Abstract: A light-emitting device is disclosed including a light emitting structure comprising a lower layer of the first conductivity type, an active layer, an upper layer of the second conductivity type; a first electrode connected to the lower layer of the first conductivity type; a second electrode connected to the upper layer of the second conductivity type. The light emitting structure is formed using a shell member, which comprises a planar portion and a shell portion. The extent of growth defects such as misfit dislocations is reduced and the extraction of light and heat is improved in the present device. The beam profile of the device may be altered by patterning the light emitting structure instead of shaping the entire chip. The device may be manufactured in a way more compatible with the established, cost-effective processing and packaging methods for large size wafers from the IC industry.

Abstract: LED light bulbs capable of providing even luminous intensity distribution are disclosed. An illustrative LED light bulb includes a base, a light transmissive cover and upstanding light bars. The base is capable of being in electrical communication with a power source and has a screw axis and a periphery. The light transmissive cover is substantially mounted on the periphery. The upstanding light bars are mounted radically around the screw axis and located between the screw axis and the periphery. The upstanding light bars are arranged to substantially shine inward to the screw axis.

Abstract: A light-emitting device includes a light emitting structure comprising a lower layer of the first conductivity type, an active layer, an upper layer of the second conductivity type, a first electrode connected to the lower layer of the first conductivity type, a second electrode connected to the upper layer of the second conductivity type, and an optical member seeded in the light emitting structure. The optical member can include a plurality of particles substantially transparent and having a lower refractive index than the light emitting structure. A plurality of discontinuities are formed at the boundary of the optical member in the light emitting structure.

Abstract: A light-emitting device includes a light emitting structure comprising a lower layer of the first conductivity type, an active layer, an upper layer of the second conductivity type, a first electrode connected to the lower layer of the first conductivity type, a second electrode connected to the upper layer of the second conductivity type, and an optical member seeded in the light emitting structure. The optical member can include a plurality of particles substantially transparent and having a lower refractive index than the light emitting structure. A plurality of discontinuities are formed at the boundary of the optical member in the light emitting structure.

Abstract: Semiconductor light emitting device and methods for its manufacture comprises a plurality of textured district defined on the surface of the substrate. The initial inclined layer deposition serves to guide the extended defects to designated gettering centers in the trench region where the defects combine with each other. As a result, the defect density in the upper section of the structure is much reduced. By incorporating a blocking mask in the structure, the free propagation of extended defects into the active layer is further restricted. The present invention is useful in the fabrication of semiconductor light emitting devices in misfit systems.

Abstract: Semiconductor light emitting device and methods for its manufacture comprises a plurality of textured district defined on the surface of the substrate. The initial inclined layer deposition serves to guide the extended defects to designated gettering centers in the trench region where the defects combine with each other. As a result, the defect density in the upper section of the structure is much reduced. By incorporating a blocking mask in the structure, the free propagation of extended defects into the active layer is further restricted. The present invention is useful in the fabrication of semiconductor light emitting devices in misfit systems.

Abstract: A semiconductor light emitting device comprising an AlGaInP lower confining layer, an AlGaInP active layer, an AlGaInP upper confining layer and a window layer on the upper confining layer using the MOVPE process. The device further contains a hybrid antireflection layer on the top surface and a lower conductive reflector at the substrate interface. The light emitting device has a high surface light-extraction efficiency due to reduced substrate absorption loss and light piping. The hybrid antireflective layer contains at least a conductor layer for uniform current injection and an oxide layer for light extraction and environmental stability. The device structure contains a hybrid conductive transparent layer on the top surface and a conductive lower reflecting layer. Advantages of the LED in the present invention include highly efficient current-spreading and surface light extraction.

Abstract: Semiconductor light-emitting devices and methods for their manufacture using an efficient reflector to minimize optical loss due to the substrate absorption. The reflector comprises a plurality of discrete quarter-wave stacks deposited on a patterned substrate, allowing for current injection around the discrete reflector stacks. The reflector is further characterized by a high refractive-index ratio suitable for broadband high-reflectance applications of the light-emitting device.