Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of first conductive layers embedded in respective said plurality of IMD layers, wherein said first conductive layers comprise copper; a first insulating layer overlying said plurality of IMD layers and said plurality of first conductive layers; at least a first wiring line in a second conductive layer overlying said first insulating layer, for distributing power signal or ground signal, wherein said second conductive layer comprise aluminum; and at least a second wiring line in a third conductive layer overlying said second conductive layer, for distributing power signal or ground signal.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of first conductive layers embedded in respective said plurality of IMD layers, wherein said first conductive layers comprise copper; a first insulating layer overlying said plurality of IMD layers and said plurality of first conductive layers; at least a first wiring line in a second conductive layer overlying said first insulating layer, for distributing power signal or ground signal, wherein said second conductive layer comprise aluminum; and at least a second wiring line in a third conductive layer overlying said second conductive layer, for distributing power signal or ground signal.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of first conductive layers embedded in respective said plurality of IMD layers, wherein said first conductive layers comprise copper; a first insulating layer overlying said plurality of IMD layers and said plurality of first conductive layers; at least a first wiring line in a second conductive layer overlying said first insulating layer, for distributing power signal or ground signal, wherein said second conductive layer comprise aluminum; and at least a second wiring line in a third conductive layer overlying said second conductive layer, for distributing power signal or ground signal.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of first conductive layers embedded in respective said plurality of IMD layers, wherein said first conductive layers comprise copper; a first insulating layer overlying said plurality of IMD layers and said plurality of first conductive layers; at least a first wiring line in a second conductive layer overlying said first insulating layer, for distributing power signal or ground signal, wherein said second conductive layer comprise aluminum; and at least a second wiring line in a third conductive layer overlying said second conductive layer, for distributing power signal or ground signal.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of IMD layers and a plurality of first conductive layers; a first passivation layer overlying the plurality of IMD layers and the first conductive layers; at least a first power/ground mesh wiring line in a first aluminum layer overlying the first Insulating layer; and at least a second power/ground mesh wiring line in a second aluminum layer overlying the first aluminum layer.

Abstract: A multi-packing tree (MPT) macro placer. The MPT macro placer comprises reading input files in a LEF/DEF format, creating a k-level binary multi-packing tree comprising k branch nodes each corresponding to one level and k+1 packing sub-trees each corresponding to one of the nodes and comprising a group of macros, optimizing the multi-packing tree according to a packing result thereof, and generating output files in a DEF format.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of IMD layers and a plurality of first conductive layers; a first passivation layer overlying the plurality of IMD layers and the first conductive layers; at least a first power/ground mesh wiring line in a first aluminum layer overlying the first Insulating layer; and at least a second power/ground mesh wiring line in a second aluminum layer overlying the first aluminum layer.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of IMD layers and first conductive layers embedded in the IMD layers; a first insulating layer overlying the IMD layers and the first conductive layers; a plurality of first power/ground mesh wiring lines, in a second conductive layer overlying the first insulating layer, for distributing power signal or ground signal; and a second insulating layer covering the second conductive layer and the first insulating layer.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of IMD layers and first conductive layers embedded in the IMD layers; a first insulating layer overlying the IMD layers and the first conductive layers; a plurality of first power/ground mesh wiring lines, in a second conductive layer overlying the first Insulating layer, for distributing power signal or ground signal; and a second insulating layer covering the second conductive layer and the first insulating layer.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of first conductive layers embedded in respective the plurality of IMD layers, wherein the first conductive layers comprise copper; a first passivation layer overlying the plurality of IMD layers and the plurality of first conductive layers; a plurality of first power/ground mesh wiring lines, formed in a second conductive layer overlying the first passivation layer, for distributing power signal or ground signal, wherein the second conductive layer comprise aluminum; and a second passivation layer covering the second conductive layer and the first passivation layer.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of first conductive layers embedded in respective the plurality of IMD layers, wherein the first conductive layers comprise copper; a first passivation layer overlying the plurality of IMD layers and the plurality of first conductive layers; a plurality of first power/ground mesh wiring lines, formed in a second conductive layer overlying the first passivation layer, for distributing power signal or ground signal, wherein the second conductive layer comprise aluminum; and a second passivation layer covering the second conductive layer and the first passivation layer.

Abstract: An integrated circuit chip with reduced IR drop and improved chip performance is disclosed. The integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of copper metal layers embedded in respective the plurality of IMD layers; a first passivation layer overlying the plurality of IMD layers and the plurality of copper metal layers; a first power/ground ring of a circuit block of the integrated circuit chip formed in a topmost layer of the plurality of copper metal layers; a second power/ground ring of the circuit block of the integrated circuit chip formed in an aluminum layer over the first passivation layer; and a second passivation layer covering the second power/ground ring and the first passivation layer.

Abstract: A multi-packing tree (MPT) macro placer. The MPT macro placer comprises reading input files in a LEF/DEF format, creating a k-level binary multi-packing tree comprising k branch nodes each corresponding to one level and k+1 packing sub-trees each corresponding to one of the nodes and comprising a group of macros, optimizing the multi-packing tree according to a packing result thereof, and generating output files in a DEF format.

Abstract: An integrated circuit chip with reduced IR drop and improved chip performance is disclosed. The integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of copper metal layers embedded in respective the plurality of IMD layers; a first passivation layer overlying the plurality of IMD layers and the plurality of copper metal layers; a first power/ground ring of a circuit block of the integrated circuit chip formed in a topmost layer of the plurality of copper metal layers; a second power/ground ring of the circuit block of the integrated circuit chip formed in an aluminum layer over the first passivation layer; and a second passivation layer covering the second power/ground ring and the first passivation layer.

Abstract: Embodiments of the invention provide a layout architecture for a standard cell integrated circuit having an array of logic cells. A plurality of first power rails is above a substrate, each of the first power rails being coupled to a power supply and extending across the logic cells. Adjacent first power rails are coupled to different voltage supplies. A filler capacitor is positioned beneath three or more adjacent first power rails and coupled to first and second voltage supplies. The filler capacitor comprises a first MOS capacitor formed with a first gate overlapping a first base in a first active region, the first gate coupled to the first voltage supply and the first base coupled to the second voltage supply. A middle first power rail of the three or more adjacent first power rails extends across the first active region.

Abstract: One exemplary embodiment of the present invention provides a semiconductor structure having a supply trunk and a supply rail, where a conduction path between the supply trunk and the supply rail includes at least two turning points. Another exemplary embodiment of the present invention provides a semiconductor structure having a first conductive layer, a second conductive layer, a third conductive layer, a first via coupled between the first conductive layer and the second conductive layer, and a second via coupled between the second conductive layer and the third conductive layer, where the first via is not aligned with the second via and the first via and the second via form a part of a supply net.

Abstract: A multi-packing tree (MPT) macro placer. The MPT macro placer comprises reading input files in a LEF/DEF format, creating a k-level binary multi-packing tree comprising k branch nodes each corresponding to one level and k+1 packing sub-trees each corresponding to one of the nodes and comprising a group of macros, optimizing the multi-packing tree according to a packing result thereof, and generating output files in a DEF format.

Abstract: A method for multi-threshold voltage CMOS process optimization. The method includes the steps of: providing a semiconductor substrate with a plurality of devices of different threshold voltages; establishing a plurality of types of timing models for a timing calculation; obtaining a static timing analysis report through the timing calculation; defining a large and a small setup time margin as a Tl and a Ts; changing the devices whose setup time margins are less than Ts to low threshold devices; changing the devices whose setup time margins are greater than Tl to high threshold devices; checking a setup time of each device; changing the devices whose setup time margin does not meet the enhanced static timing analysis report; performing a first pocket implant process for the normal threshold devices; performing a second pocket implant process for the low threshold devices and performing a third pocket implant process for the high threshold devices.

Abstract: A method for multi-threshold voltage CMOS process optimization. The method includes the steps of: providing a semiconductor substrate with a plurality of devices of different threshold voltages; establishing a plurality of types of timing models for a timing calculation; obtaining a static timing analysis report through the timing calculation; defining a large and a small setup time margin as a Tl and a Ts; changing the devices whose setup time margins are less than Ts to low threshold devices; changing the devices whose setup time margins are greater than Tl to high threshold devices; checking a setup time of each device; changing the devices whose setup time margin does not meet the enhanced static timing analysis report; performing a first pocket implant process for the normal threshold devices; performing a second pocket implant process for the low threshold devices and performing a third pocket implant process for the high threshold devices.