Abstract: A semiconductor apparatus includes: a device having a terminal; and a protection circuit configured to be connected to the terminal of the device, the protection circuit including at least two unidirectional conduction circuits connected in anti-parallel, the two unidirectional conduction circuits configured to have current directions opposite to each other in an on state, wherein the protection circuit is so configured that, at least one of the two unidirectional conduction circuits is turned on to release charges accumulated at the terminal when a voltage at the terminal of the device is out of a predetermined protection voltage range

Abstract: A pixel array element having an isolation structure, comprising a plurality of groups of pixel cells each including a plurality of pixel cells having different colors, wherein the pixel cells having different colors are alternately arranged such that each pixel cell has a different color from an adjacent pixel cell, and an isolation structure located between the adjacent pixel cells and formed of a color filter material, wherein the color filter material of the isolation structure has a color different from that of the adjacent pixel cell.

Abstract: A photodiode in a CMOS image sensor and a method for making the photodiode are described. To make the photodiode, protrusions and trenches are alternately patterned on the surface of a semiconductor substrate. The protrusions and trenches are doped to form a first doped layer; and an upper portion of the first doped layer is doped to form a second doped layer, the first and second doped layers comprise dopants having opposite polarities. The photodiode further includes a dielectric layer on the second doped layer. A CMOS image sensor with the photodiode has an improved quantum efficiency and enhanced performance.