Abstract: An ESD protection structure and a semiconductor device having an ESD protection structure with the ESD protection structure including a patterned conductive ESD protection layer. The ESD protection layer is patterned to have a first portion of a substantially closed ring shape having an outer contour line and an inner contour line parallel with each other. The outer and the inner contour lines are waved lines. The first portion further has a midline between and parallel with the outer and the inner contour lines. The midline is a waved line having a substantially constant curvature at each point of the midline. Therefore the ESD protection layer has a substantially uniform curvature and an increased perimeter which advantageously improve the breakdown voltage and the current handling capacity of the ESD protection structure.

Abstract: An ESD protection structure and a semiconductor device having an ESD protection structure with the ESD protection structure including a patterned conductive ESD protection layer. The ESD protection layer is patterned to have a first portion of a substantially closed ring shape having an outer contour line and an inner contour line parallel with each other. The outer and the inner contour lines are waved lines. The first portion further has a midline between and parallel with the outer and the inner contour lines. The midline is a waved line having a substantially constant curvature at each point of the midline. Therefore the ESD protection layer has a substantially uniform curvature and an increased perimeter which advantageously improve the breakdown voltage and the current handling capacity of the ESD protection structure.

Abstract: A semiconductor device having an ESD protection structure and a method for forming the semiconductor device. The ESD protection structure is formed atop a termination area of the substrate and is electrically coupled between a source metal and a gate metal of the semiconductor device. The ESD protection structure has a first portion adjacent to the source metal, a second portion adjacent to the gate metal and a middle portion between and connecting the first portion and the second portion, wherein the middle portion has a first thickness greater than a second thickness of the first portion and the second portion. Such an ESD protection structure is beneficial to the formation of interlayer vias which are formed to couple the ESD protection structure to the source metal and the gate metal.