Abstract: A method for forming a semiconductor device. An exemplary method includes optionally forming an oxide layer and forming a passivation layer. Forming the passivation layer includes providing a treatment precursor to the reaction chamber. The treatment precursor can be or include an organic silicon-containing precursor or an organic boron-containing precursor.

Abstract: Disclosed is a method, system and apparatus for filling a gap feature on a substrate surface, comprising providing a substrate with a surface comprising a gap feature in a reaction chamber, depositing a first material layer into the gap feature with a first cyclic deposition process, etching the first material layer to form a base in a bottom portion of the gap feature with a cyclic etching process and partially filling the gap feature with a second material layer with a second cyclic deposition process.