Abstract: Systems and methods for fabricating a microelectric device are provided herein. Particular embodiments provide systems and methods for fabricating a magnetic recording pole for a magnetic recording head, such as an energy assisted magnetic recording (EAMR) head commonly used in a disk storage device. Some embodiments provide for systems and methods of fabricating magnetic recording poles that protect the core of the magnetic recording head during the removal of removal of seed layers.

Abstract: A method for fabricating a magnetic recording transducer is described. The transducer has an ABS location and a nonmagnetic intermediate layer having a pole trench. The method includes depositing at least one magnetic pole layer having a top surface and a pole tip portion proximate to the ABS location. A first portion of the magnetic pole layer(s) resides in the pole trench. The magnetic pole layer(s) have a seam in the pole tip portion that extends to the top surface. The method also includes cathodically etching a second portion of the magnetic pole layer(s) from the seam at a rate of not more than 0.1 nanometers/second, thereby forming a seam trench in the magnetic pole layer(s). The method also includes refilling the seam trench with at least one magnetic refill layer. At least an additional magnetic pole layer is deposited on the top surface and the magnetic refill layer(s).

Abstract: Embodiments of the present invention include systems and methods for low-rate electrochemical (wet) etch that use a net cathodic current or potential. In particular, some embodiments achieve controlled etch rates of less than 0.1 nm/s by applying a small net cathodic current to a substrate as the substrate is submerged in an aqueous electrolyte. Depending on the embodiment, the aqueous electrolyte utilized may comprise the same type of cations as the material being etched from the substrate. Some embodiments are useful in etching thin film metals and alloys and fabrication of magnetic head transducer wafers.

Abstract: A method and system for fabricating a microelectric device are described. A write pole of an energy assisted magnetic recording head or a capacitor might be fabricated. The method includes depositing a resist film and curing the resist film at a temperature of at least 180 degrees centigrade. A cured resist film capable of supporting a line having an aspect ratio of at least ten is thus provided. A portion of the cured resist film is removed. A remaining portion of the resist film forms the line. An insulating or nonmagnetic layer is deposited after formation of the line. The line is removed to provide a trench in the insulating or nonmagnetic layer. The trench has a height and a width. The height divided by the width corresponds to the aspect ratio. At least part of the structure is provided in the trench.

Abstract: Embodiments of the present invention include systems and methods for low-rate electrochemical (wet) etch that use a net cathodic current or potential. In particular, some embodiments achieve controlled etch rates of less than 0.1 nm/s by applying a small net cathodic current to a substrate as the substrate is submerged in an aqueous electrolyte. Depending on the embodiment, the aqueous electrolyte utilized may comprise the same type of cations as the material being etched from the substrate. Some embodiments are useful in etching thin film metals and alloys and fabrication of magnetic head transducer wafers.

Abstract: A method and system for plating CoNiFe is disclosed. The method and system include providing a plating solution including hydroxymethyl-p-tolylsulfone and plating the CoNiFe film on a substrate in the plating solution. The plating solution is configured to provide a CoNiFe film having a high saturation magnetic flux density and having a composition of 50-70 weight percent of Fe and 3-8 weight percent of Ni. In another aspect, the method and system include plating at least a portion of a first and/or second pole of a write head using the plating solution including hydroxymethyl-p-tolylsulfone and configured to plate the CoNiFe film having a high saturation magnetic flux density and a composition of 50-70 weight percent of Fe and 3-8 weight percent of Ni.