Patents by Inventor Tigran Nshanian

Tigran Nshanian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bonding ultra-dense bump arrays using alignment bumps
    Patent number: 11626551
    Abstract: Additional “auxiliary” bumps are used to stabilize alignment and reduce slippage of dense arrays of interconnect bumps on opposing die during a bonding process. One example of auxiliary bumps are interdigitated bumps. Interdigitated bumps are more self-aligning and laterally stable because bumps do not meet head-to-head. Rather, the head of a bump on one die falls into the space between bumps on the other die. Another example of auxiliary bumps are nail bumps. In nail bumps, one bump is harder (the nail) and “drives” into the opposing softer bump during bonding. This constrains the lateral movement of the two bumps relative to each other and reduces lateral slippage. In some embodiments, the auxiliary bumps and interconnect bumps are formed in the same process, and also bonded in the same process.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: April 11, 2023
    Assignee: Tectus Corporation
    Inventors: Nachiket Raghunath Raravikar, Arnold Daguio, Kwong-Hin Henry Choy, Tigran Nshanian, Paul Scott Martin
  • Reducing or eliminating nanopipe defects in III-nitride structures
    Patent number: 11152539
    Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.
    Type: Grant
    Filed: April 8, 2020
    Date of Patent: October 19, 2021
    Assignee: LUMILEDS LLC
    Inventors: Isaac Harshman Wildeson, Patrick Nolan Grillot, Tigran Nshanian, Parijat Pramil Deb
  • Reducing Or Eliminating Nanopipe Defects In III-Nitride Structures
    Publication number: 20200235263
    Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.
    Type: Application
    Filed: April 8, 2020
    Publication date: July 23, 2020
    Applicant: Lumileds LLC
    Inventors: Isaac Wildeson, Patrick Nolan Grillot, Tigran Nshanian, Parijat Deb
  • Reducing or eliminating nanopipe defects in III-nitride structures
    Patent number: 10651340
    Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: May 12, 2020
    Assignee: Lumileds LLC
    Inventors: Patrick Nolan Grillot, Isaac Harshman Wildeson, Tigran Nshanian, Parijat Pramil Deb
  • REDUCING OR ELIMINATING NANOPIPE DEFECTS IN III-NITRIDE STRUCTURES
    Publication number: 20190081207
    Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.
    Type: Application
    Filed: November 14, 2018
    Publication date: March 14, 2019
    Applicant: Lumileds LLC
    Inventors: Patrick Nolan Grillot, Isaac Harshman Wildeson, Tigran Nshanian, Parijat Pramil Deb
  • Reducing or eliminating nanopipe defects in III-nitride structures
    Patent number: 10193015
    Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: January 29, 2019
    Assignee: LUMILEDS LLC
    Inventors: Patrick Nolan Grillot, Isaac Harshman Wildeson, Tigran Nshanian, Parijat Pramil Deb
  • REDUCING OR ELIMINATING NANOPIPE DEFECTS IN III-NITRIDE STRUCTURES
    Publication number: 20160308092
    Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.
    Type: Application
    Filed: June 27, 2016
    Publication date: October 20, 2016
    Inventors: Patrick Nolan Grillot, Isaac Harshman Wildeson, Tigran Nshanian, Parijat Pramil Deb
  • Reducing or eliminating nanopipe defects in III-nitride structures
    Patent number: 9406836
    Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.
    Type: Grant
    Filed: July 3, 2013
    Date of Patent: August 2, 2016
    Assignee: Koninklijke Philips N.V.
    Inventors: Patrick Nolan Grillot, Isaac Harshman Wildeson, Tigran Nshanian, Parijan Pramil Deb
  • REDUCING OR ELIMINATING NANOPIPE DEFECTS IN III-NITRIDE STRUCTURES
    Publication number: 20150207024
    Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.
    Type: Application
    Filed: July 3, 2013
    Publication date: July 23, 2015
    Inventors: Patrick Nolan Grillot, Isaac Harshman Wildeson, Tigran Nshanian, Parijan Pramil Deb