Abstract: A method of generating a computational model includes generating a set of benchmark parameters indicative of material properties of a reference material system through performance of at least one of a simulation of, or an experiment on, a subset of the reference material system, generating a plurality of DFTB parameters for the reference material system, performing an optimization routine to adjust each DFTB parameter of the plurality of DFTB parameters to improve accuracy relative to the set of benchmark parameters of the reference material system, and storing an optimized set of DFTB parameters corresponding to the material properties of the reference material system.

Abstract: A field-effect transistor (FET) includes a fin, an insulator region, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or more lightly doped than the first and second regions. The interior region of the fin is formed as a superlattice of layers of first and second materials alternating vertically. The insulator layer extends around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the gate are configured to generate an inhomogeneous electrostatic potential within the interior region, the inhomogeneous electrostatic potential cooperating with physical properties of the superlattice to cause scattering of charge carriers sufficient to change a quantum property of such charge carriers to change the ability of the charge carriers to move between the first and second materials.

Abstract: A field-effect transistor (FET) includes a fin, an insulator region, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or more lightly doped than the first and second regions. The interior region of the fin is formed as a superlattice of layers of first and second materials alternating vertically. The insulator layer extends around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the gate are configured to generate an inhomogeneous electrostatic potential within the interior region, the inhomogeneous electrostatic potential cooperating with physical properties of the superlattice to cause scattering of charge carriers sufficient to change a quantum property of such charge carriers to change the ability of the charge carriers to move between the first and second materials.

Abstract: Various embodiments of the present application relate to a resource management platform that monitors and controls the computational tasks dynamically, and improves or adapts the control during runtime. The resource management platform is able to enhance the resource usage; depending on the width of resource usage fluctuations of the original, unmanaged computational code, the performance enhancement can reach factors exceeding 3×.

Abstract: A tunnel field-effect transistor (TFET) includes a fin, an insulator layer, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or is more lightly doped than the first region and the second region. At least the interior region of the fin formed as a type II superlattice, wherein materials of the superlattice alternate vertically. The insulator layer is formed around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the at least one gate are configured to generate an inhomogeneous electrostatic potential within the interior region.

Abstract: A non-transitory machine readable storage medium having a machine readable program stored therein, wherein the machine readable program, when executed on a processing system, causes the processing system to perform a procedure of modeling many particle systems, wherein the procedure includes discretizing a many particle system into a first set of basis functions, thereby producing a discretized many particle system, wherein the first set of basis functions comprises a plurality of basis functions. The procedure further includes extracting a plurality of observables in the many particle system represented in the first set of basis functions by applying a respective operator on a corresponding Green's function of the plurality of Green's functions.

Abstract: A software architecture where the software architecture processes a method, wherein the method includes defining initial conditions for a set of Büttiker probes. The set of Büttiker probes include various interaction equations between one or several many-body systems. The method includes computing properties of particles with quantum transport methods. A quantum transport method of the quantum transport methods include a set of Büttiker probes. The particles include the particles of one or several many-body systems. Further, the method includes calculating a current for each Büttiker probe of the set of Büttiker probes. The current includes at least one of momentum current, particle current, energy current, spin current, color charge or chirality current. The method includes setting up a set of continuity equations such that for each continuity equation a calculated current of a Büttiker probe is in a particular relation with an another calculated current of an another Büttiker probe.

Abstract: A field-effect transistor (FET) includes a fin, an insulator region, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or more lightly doped than the first and second regions. The interior region of the fin is formed as a superlattice of layers of first and second materials alternating vertically. The insulator layer extends around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the gate are configured to generate an inhomogeneous electrostatic potential within the interior region, the inhomogeneous electrostatic potential cooperating with physical properties of the superlattice to cause scattering of charge carriers sufficient to change a quantum property of such charge carriers to change the ability of the charge carriers to move between the first and second materials.

Abstract: A tunnel field-effect transistor (TFET) includes a fin, an insulator layer, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or is more lightly doped than the first region and the second region. At least the interior region of the fin formed as a type II superlattice, wherein materials of the superlattice alternate vertically. The insulator layer is formed around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the at least one gate are configured to generate an inhomogeneous electrostatic potential within the interior region.

Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.

Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material.

Abstract: A system includes a plurality of nanoporous filtering media, wherein each nanoporous filtering media of the plurality of nanoporous filtering media includes a plurality of nanopores, wherein the plurality of nanoporous filtering media are stacked over each other. The system further includes a voltage source connected to a nanoporous filtering media of the plurality of nanoporous filtering media, wherein the voltage source is configured to provide a voltage to the nanoporous filtering media of the plurality of nanoporous media, wherein the voltage source is configured to establish an electrostatic charge within a circumference of each nanopore of the plurality of nanopores of the nanoporous filtering media.

Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.

Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material.