Abstract: A method of determining a device behavior, wherein the method includes using a first procedure. The first procedure includes discretizing a user specified nano-device structure for at least one quantum method. Additionally, the first procedure includes solving the at least one quantum method, thereby having a solution of the at least one quantum method. Moreover, the first procedure includes extracting a parameter out of the solution of the at least one quantum method. Next, the first procedure includes applying at least one approximate method to the user-specified nano-device structure using the parameter. The first procedure additionally includes solving the at least one approximate method to the user-specified nano-device structure using the parameter. The first procedure also includes extracting the device behavior of the user-specified nano-device structure. Next, the method of determining the device behavior includes iterating the first procedure until a condition is satisfied.

Abstract: A light emitting diode (LED) including a first contact. The LED further includes a first semiconductor layer over the first contact. The first semiconductor layer comprises hexagonal Boron Nitride. Additionally, the LED includes a second semiconductor layer over the first semiconductor layer. The second semiconductor layer comprises at least one hexagonal Boron Nitride quantum well and at least one hexagonal Boron Nitride quantum barrier. Moreover, the LED includes a third semiconductor layer over the second semiconductor layer. The third semiconductor layer comprises hexagonal Boron Nitride. Further, the LED includes a second contact over the third semiconductor layer.

Abstract: A light emitting diode (LED) including a first contact. The LED further includes a first semiconductor layer over the first contact. The first semiconductor layer comprises hexagonal Boron Nitride. Additionally, the LED includes a second semiconductor layer over the first semiconductor layer. The second semiconductor layer comprises at least one hexagonal Boron Nitride quantum well and at least one hexagonal Boron Nitride quantum barrier. Moreover, the LED includes a third semiconductor layer over the second semiconductor layer. The third semiconductor layer comprises hexagonal Boron Nitride. Further, the LED includes a second contact over the third semiconductor layer.

Abstract: A method includes using a first procedure of discretizing a user specified nano-device structure for at least one quantum method with open boundary conditions. Additionally, the first procedure includes solving the at least one quantum method with open boundary conditions, thereby having a solution of the at least one quantum method with open boundary conditions. Moreover, the first procedure includes extracting a parameter out of the solution of the at least one quantum method with open boundary conditions. Furthermore, the first procedure includes discretizing at least one quantum method with closed boundary conditions to the user-specified nano-device structure using the parameter. Next, the first procedure includes solving the at least one quantum method with closed boundary conditions to the user-specified nano-device structure using the parameter. Further, the first procedure includes extracting the device behavior of the user-specified nano-device structure.

Abstract: A light emitting diode (LED) including a first contact. The LED further includes a first semiconductor layer over the first contact. The first semiconductor layer comprises hexagonal Boron Nitride. Additionally, the LED includes a second semiconductor layer over the first semiconductor layer. The second semiconductor layer comprises at least one hexagonal Boron Nitride quantum well and at least one hexagonal Boron Nitride quantum barrier. Moreover, the LED includes a third semiconductor layer over the second semiconductor layer. The third semiconductor layer comprises hexagonal Boron Nitride. Further, the LED includes a second contact over the third semiconductor layer.

Abstract: A method of determining a device behavior, wherein the method includes using a first procedure. The first procedure includes discretizing a user specified nano-device structure for at least one quantum method. Additionally, the first procedure includes solving the at least one quantum method, thereby having a solution of the at least one quantum method. Moreover, the first procedure includes extracting a parameter out of the solution of the at least one quantum method. Next, the first procedure includes applying at least one approximate method to the user-specified nano-device structure using the parameter. The first procedure additionally includes solving the at least one approximate method to the user-specified nano-device structure using the parameter. The first procedure also includes extracting the device behavior of the user-specified nano-device structure. Next, the method of determining the device behavior includes iterating the first procedure until a condition is satisfied.

Abstract: A light emitting diode (LED) including a first contact. The LED further includes a first semiconductor layer over the first contact. The first semiconductor layer comprises hexagonal Boron Nitride. Additionally, the LED includes a second semiconductor layer over the first semiconductor layer. The second semiconductor layer comprises at least one hexagonal Boron Nitride quantum well and at least one hexagonal Boron Nitride quantum barrier. Moreover, the LED includes a third semiconductor layer over the second semiconductor layer. The third semiconductor layer comprises hexagonal Boron Nitride. Further, the LED includes a second contact over the third semiconductor layer.

Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.

Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.