Abstract: A laser light source arrangement for a laser projection device includes a laser diode array. The laser diode array includes a first light group with at least one first laser diode and a second light group with at least one second laser diode. The first laser diode and the second laser diode include spectrally different emission maxima. The first laser diode includes an emission maximum in a wavelength range of 440-462 nm. The second laser diode includes an emission maximum in a wavelength range of 462-472 nm. The laser diode array is accommodated in a housing in such a way that the beam paths of the first laser diode and the second laser diode extend spatially separated within the housing.

Abstract: The disclosed optoelectronic semiconductor chip includes a carrier, a semiconductor layer sequence on the carrier having at least one active zone for generating radiation, a layer of high optical refractive index on an output coupling facet of the semiconductor layer sequence for the output coupling of radiation, and a coating of low optical refractive index directly on an outer side of the layer of high optical refractive index for the total internal reflection of the radiation, wherein the semiconductor layer sequence is configured to guide the radiation in the active zone perpendicularly to a growth direction of the semiconductor layer sequence, and the layer of high optical refractive index is configured to deflect the radiation at the outer side parallel to the growth direction.

Abstract: Disclosed is an optoelectronic semiconductor component including at least one optoelectronic semiconductor chip in an interior of a housing; the housing has a base part and a top part, the base part is a ceramic support, the top part is made of one or more glass materials, a connection layer that is made of a solder glass is arranged between the base part and the top part, and the ceramic support includes a connection portion with a nickel-containing surface which is in direct contact with the solder glass.

Abstract: A projector includes a first optoelectronic semiconductor chip for generating a first radiation having a first color. The projector also includes a second optoelectronic semiconductor chip for generating a second radiation-having a second color. The projector further includes a wavelength conversion element which is configured to generate a third radiation having a third color from a first portion of the first radiation. The projector additionally includes beam splitter. The projector also includes a scattering plate. The wavelength conversion element is configured to fully convert the first portion of the first radiation. The beam splitter is configured to branch off a second portion of the first radiation upstream of the wavelength conversion element. The scattering plate is arranged in a beam path of the second portion of the first radiation at a point at which the first portion has already been branched off.

Abstract: Surface-emitting semiconductor laser chip (1) comprising a carrier (20), a layer stack (10) arranged on the carrier (20) and having a layer plane (L) extending perpendicularly to the stacking direction (R), a front side contact (310) and a rear side contact (320), in which in operation a predetermined distribution of a current density (I) is achieved by means of current constriction in the layer stack (10), wherein in the carrier (20) an electrical through-connection (200) is provided, which extends from a bottom surface (20a) of the carrier (20) facing away from the layer stack (10) to a surface of the carrier (20) facing the layer stack (10), and the distribution of the current density (I) is significantly influenced by the shape and size of the cross-section of the through-connection (200) parallel to the layer plane (L) on the surface facing the layer stack.

Abstract: The invention relates to a laser diode arrangement for a laser projection device, comprising a carrier; a laser diode array arranged on the carrier, comprising a first light group having a plurality of first laser diodes and a second light group having a plurality of second laser diodes, said first light emitting group emitting polarized electromagnetic radiation having a first polarization direction and said second light emitting group emitting polarized electromagnetic radiation having a second polarization direction, said first polarization direction and said second polarization direction being perpendicular to each other, the invention being characterized in that said first light emitting group comprises at least one first laser housing accommodating at least one first laser diode and said second light emitting group comprises at least one second laser housing accommodating at least one second laser diode; and the number of first laser diodes of the laser diode array is at least twice the number of second

Abstract: A semiconductor device includes a first semiconductor body including a substrate having a first thickness, wherein the first semiconductor body includes a first active zone that generates or receives radiation, and a second semiconductor body having a second thickness smaller than the first thickness and including a tear-off point is arranged on the substrate and connected in an electrically conducting manner to the first semiconductor body, wherein the second semiconductor body includes a second active zone that generates or receives radiation, and the second active zone generates radiation and the first active zone detects the radiation, and the first semiconductor body includes contacts on its underside for connection to the semiconductor device.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In an embodiment an arrangement includes a plurality of pixels, wherein each pixel includes at least two subpixels of each color, wherein each color is defined by a predefined target color location, wherein each subpixel comprises an optoelectronic component defined by a color location, wherein the color locations of the optoelectronic components of each color is chosen such that during operation of the optoelectronic components the predefined target color location is met for each color, wherein the optoelectronic components for each color are of identical design, and a controller configured to commonly control the optoelectronic components of a color.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A component assembly includes an intermediate carrier, a plurality of components and a plurality of anchoring elements. The components have at least two electrical devices and an insulating layer. At least one of the electrical devices is an optoelectronic semiconductor chip. The insulating layer is between the electrical devices of a same component. The at least two electrical devices of the same component are arranged next to one another and enclosed laterally by the insulating layer. The at least two electrical devices and the insulating layer of the same component are integral parts of a self-supporting and mechanically stable unit. The self-supporting and mechanically stable unit and the anchoring elements fix the positions of the components on the intermediate carrier. The components that are self-supporting and mechanically stable units are detachable from the intermediate carrier, and the anchoring elements release the components under mechanical load when the latter are removed.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In an embodiment an arrangement includes a plurality of pixels, wherein each pixel includes at least two subpixels of each color, wherein each color is defined by a predefined target color location, wherein each subpixel comprises an optoelectronic component defined by a color location, wherein the color locations of the optoelectronic components of each color is chosen such that during operation of the optoelectronic components the predefined target color location is met for each color, wherein the optoelectronic components for each color are of identical design, and a controller configured to commonly control the optoelectronic components of a color.

Abstract: A component assembly includes an intermediate carrier, a plurality of components and a plurality of anchoring elements. The components have at least two electrical devices and an insulating layer. At least one of the electrical devices is an optoelectronic semiconductor chip. The insulating layer is between the electrical devices of a same component. The at least two electrical devices of the same component are arranged next to one another and enclosed laterally by the insulating layer. The at least two electrical devices and the insulating layer of the same component are integral parts of a self-supporting and mechanically stable unit. The self-supporting and mechanically stable unit and the anchoring elements fix the positions of the components on the intermediate carrier. The components that are self-supporting and mechanically stable units are detachable from the intermediate carrier, and the anchoring elements release the components under mechanical load when the latter are removed.

Abstract: Surface-emitting semiconductor laser chip (1) comprising a carrier (20), a layer stack (10) arranged on the carrier (20) and having a layer plane (L) extending perpendicularly to the stacking direction (R), a front side contact (310) and a rear side contact (320), in which in operation a predetermined distribution of a current density (I) is achieved by means of current constriction in the layer stack (10), wherein in the carrier (20) an electrical through-connection (200) is provided, which extends from a bottom surface (20a) of the carrier (20) facing away from the layer stack (10) to a surface of the carrier (20) facing the layer stack (10), and the distribution of the current density (I) is significantly influenced by the shape and size of the cross-section of the through-connection (200) parallel to the layer plane (L) on the surface facing the layer stack.

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).

Abstract: A semiconductor device includes a first semiconductor body including a substrate having a first thickness, wherein the first semiconductor body includes a first active zone that generates or receives radiation, and a second semiconductor body having a second thickness smaller than the first thickness and including a tear-off point is arranged on the substrate and connected in an electrically conducting manner to the first semiconductor body, wherein the second semiconductor body includes a second active zone that generates or receives radiation, and the second active zone generates radiation and the first active zone detects the radiation, and the first semiconductor body includes contacts on its underside for connection to the semiconductor device.