Patents by Inventor Tilmann Romainczyk

Tilmann Romainczyk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7507649
    Abstract: The invention relates to a method for doping a semiconductor material with Cesium, wherein said semiconductor material is exposed to a cesium vapor. Said Cesium vapor is provided by Cesium sublimation from a Cesium alloy. There is also provided an organic light emitting diode comprising at least one layer of a Cesium doped organic semiconductor material, wherein said at least one layer of said Cesium doped organic semiconductor material is doped with Cesium provided by Cesium evaporation of Cesium from a Cesium alloy. The Cesium vapor is preferably provided by Cesium sublimation from a standard organic material deposition evaporator.
    Type: Grant
    Filed: September 30, 2005
    Date of Patent: March 24, 2009
    Assignee: Novaled AG
    Inventors: Ansgar Werner, Tilmann Romainczyk
  • Publication number: 20080048557
    Abstract: In order to improve the decoupling efficiency in a top-emitting OLED a top-emitting electroluminescent component (100) is suggested comprising a substrate, a first electrode (120) nearest to the substrate, a second electrode (14) located at a distance from the substrate, and at least one light-emitting organic layer (130) arranged between both electrodes, the emitted light being transmitted through the second electrode. The component in accordance with the invention is distinguished by an additional layer (150) facing away from the at least one organic layer is arranged on the side of the second electrode, which additional layer comprises optically effective light-emitting heterogeneities (151, 152, 153), especially in the form of scatter centers, the degree of transmission of the additional layer of the emitted light being greater than 0.6.
    Type: Application
    Filed: July 12, 2005
    Publication date: February 28, 2008
    Inventors: Jan Birnstock, Martin Vehse, Tilmann Romainczyk
  • Publication number: 20060079004
    Abstract: The invention relates to a method for doping a semiconductor material with Cesium, wherein said semiconductor material is exposed to a cesium vapor. Said Cesium vapor is provided by Cesium sublimation from a Cesium alloy. There is also provided an organic light emitting diode comprising at least one layer of a Cesium doped organic semiconductor material, wherein said at least one layer of said Cesium doped organic semiconductor material is doped with Cesium provided by Cesium evaporation of Cesium from a Cesium alloy. The Cesium vapor is preferably provided by Cesium sublimation from a standard organic material deposition evaporator.
    Type: Application
    Filed: September 30, 2005
    Publication date: April 13, 2006
    Inventors: Ansgar Werner, Tilmann Romainczyk