Abstract: A method is described herein. The method generally includes fetching a set of data from a memory coupled to a memory controller. The method generally includes determining a first subset of data from the set of data. The method generally includes determining a second subset of data from the set of data. The method generally includes determining a first element from the set of data. The method generally includes providing a vector including the first subset, the first element, and the second subset, wherein each element of the first subset is disposed in one portion of the vector and each element of the second subset is disposed in another portion of the vector. The method generally includes storing the vector into a register of the memory controller.

Abstract: A method is described herein. The method generally includes receiving stream parameters that defines an array, wherein the stream parameters include a first null element count and a second null element count. The method generally includes forming a stream of vectors for the multidimensional array responsive to the stream parameters. The stream of vectors generally includes a vector of null elements at a beginning of the stream of vectors based on the first null element count. The stream of vectors generally includes a null element at a beginning of each vector of the stream of vectors based on the second null element count. The stream of vectors generally includes a set of data distributed across a subset of the stream of vectors. The method generally includes providing the stream of vectors.

Abstract: The present invention is generally directed to a versatile fluid treatment system which includes: a mobile device; a track system connected to the mobile device; one or more treatment vessels removably attached to the track system, each treatment vessel comprising a treatment material disposed inside the treatment vessel, at least one fluid inlet, and at least one fluid outlet; an input conduit that receives a fluid to be treated, the input conduit in fluid communication with the fluid inlet on the treatment vessel; and an output conduit in fluid communication with the fluid outlet on the treatment vessel, the output conduit receives treated fluid from the treatment vessels via the fluid outlet.

Abstract: The present invention is generally directed to a versatile fluid treatment system which includes: a mobile device; a track system connected to the mobile device; one or more treatment vessels removably attached to the track system, each treatment vessel comprising a treatment material disposed inside the treatment vessel, at least one fluid inlet, and at least one fluid outlet; an input conduit that receives a fluid to be treated, the input conduit in fluid communication with the fluid inlet on the treatment vessel; and an output conduit in fluid communication with the fluid outlet on the treatment vessel, the output conduit receives treated fluid from the treatment vessels via the fluid outlet.

Abstract: The subject application relates to a chemical vapor (CV) deposition technique to form CuInxGa1-x(SeyS1-y)2, compounds. As a copper source, solid copper can be used with a HCl transport gas and Cu3Cl3 is expected to be a major Cu-containing vapor species in this system, Liquid indium and HCl transport gas are appropriate for the indium source to provide InCl vapor species. Since selenium and sulphur are relatively highly volatile, their vapor can be carried by an inert gas without an additional transport gas, although H2Se and H2S can be used. Each source temperature can be controlled separately so as to provide a sufficient and stable vapor flux. Also provided by the subject application are CV-deposited substrates and devices, such as electronic devices or solar cells, that contain CV-deposited CuInxGa1-x(SeyS1-y)2 substrates.

Abstract: A modular projection device. The modular projection device includes a docking interface for selectively coupling the projection device to a content source module that provides the projection device with video content for projection onto a projection surface.

Abstract: An herbicidal composition which comprises a mixture of an herbicide and a C2-C5 mono- or dicarboxylic acid additive, and mixtures of additives thereof, wherein the composition is more effective in providing a faster-acting herbicidal effect than the herbicide alone is described. A method of controlling weed growth with the herbicidal composition is also described.

Abstract: A modular projection device. The modular projection device includes a docking interface for selectively coupling the projection device to a content source module that provides the projection device with video content for projection onto a projection surface.

Abstract: A pesticide composition for applying to soil or plants containing of at least one pesticidally active ingredient, at least one member selected from the group consisting of alkoxylates of C6-C18 alcohol, and mixtures thereof wherein the alkoxylates is with a polyoxyalkylene ranging from POE (1) through POE (20) and/or mixtures of different carbon chain lengths of C6-C18 with POE (1) to up to about POE (20) and POP (1) to POP (10), a counter balanced crop safe solvent, diluent, and an emulsifier.

Abstract: A method for forming group III-N articles includes the steps of providing a single crystal silicon substrate, depositing a zinc oxide (ZnO) layer on the substrate, and depositing a single crystal group III-N layer on the ZnO layer. At least a portion of the group III-N layer is deposited at a temperature of less than 600° C.

Abstract: A semiconductor device and method for forming the same includes a silicon (111) single crystal substrate, and an epitaxial boron phosphide (BP) layer disposed on the substrate. A group III-nitride semiconductor epitaxial layer is disposed on the BP epitaxial layer.

Abstract: A semiconductor device and method for forming the same includes a silicon (111) single crystal substrate, and an epitaxial boron phosphide (BP) layer disposed on the substrate. A group III-nitride semiconductor epitaxial layer is disposed on the BP epitaxial layer.

Abstract: A method for forming group III-N articles includes the steps of providing a single crystal silicon substrate, depositing a zinc oxide (ZnO) layer on the substrate, and depositing a single crystal group III-N layer on the ZnO layer. At least a portion of the group III-N layer is deposited at a temperature of less than 600° C.

Abstract: The subject invention pertains to a method and device for producing large area single crystalline III-V nitride compound semiconductor substrates with a composition AlxInyGa1-x-y N (where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1). In a specific embodiment, GaN substrates, with low dislocation densities (˜107 cm2) can be produced. These crystalline III-V substrates can be used to fabricate lasers and transistors. Large area free standing single crystals of III-V compounds, for example GaN, can be produced in accordance with the subject invention. By utilizing the rapid growth rates afforded by hydride vapor phase epitaxy (HVPE) and growing on lattice matching orthorhombic structure oxide substrates, good quality III-V crystals can be grown. Examples of oxide substrates include LiGaO2, LiAlO2, MgAlScO4, Al2MgO4, and LiNdO2. The subject invention relates to a method and apparatus, for the deposition of III-V compounds, which can alternate between MOVPE and HVPE, combining the advantages of both.

Abstract: The subject invention pertains to a method and device for producing large area single crystalline III-V nitride compound semiconductor substrates with a composition AlxInyGa1-x-y N (where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1). In a specific embodiment, GaN substrates, with low dislocation densities (˜107 cm2) can be produced. These crystalline III-V substrates can be used to fabricate lasers and transistors. Large area free standing single crystals of III-V compounds, for example GaN, can be produced in accordance with the subject invention. By utilizing the rapid growth rates afforded by hydride vapor phase epitaxy (HVPE) and growing on lattice matching orthorhombic structure oxide substrates, good quality III-V crystals can be grown. Examples of oxide substrates include LiGaO2, LiAlO2, MgAlScO4, Al2MgO4, and LiNdO2. The subject invention relates to a method and apparatus, for the deposition of III-V compounds, which can alternate between MOVPE and HVPE, combining the advantages of both.

Abstract: The subject invention pertains to a method and device for producing large area single crystalline III-V nitride compound semiconductor substrates with a composition AlxInyGal-x-y N (where O≦x≦1, 0≦y≦1, and 0≦x+y≦1). In a specific embodiment, GaN substrates, with low dislocation densities (˜107 cm2) can be produced. These crystalline III-V substrates can be used to fabricate lasers and transistors. Large area free standing single crystals of III-V compounds, for example GaN, can be produced in accordance with the subject invention. By utilizing the rapid growth rates afforded by hydride vapor phase epitaxy (HVPE) and growing on lattice matching orthorhombic structure oxide substrates, good quality III-V crystals can be grown. Examples of oxide substrates include LiGaO2, LiAlO2, MgAlScO4, Al2MgO4, and LiNdO2. The subject invention relates to a method and apparatus, for the deposition of III-V compounds, which can alternate between MOVPE and HVPE, combining the advantages of both.