Patents by Inventor Tim Dennis

Tim Dennis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200185546
    Abstract: Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.
    Type: Application
    Filed: February 18, 2020
    Publication date: June 11, 2020
    Applicant: SunPower Corporation
    Inventors: Gabriel HARLEY, David D. SMITH, Tim DENNIS, Ann WALDHAUER, Taeseok KIM, Peter John COUSINS
  • Patent number: 10658525
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: May 19, 2020
    Assignee: SunPower Corporation
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Patent number: 10629760
    Abstract: Methods of fabricating emitter regions of solar cells are described. Methods of forming layers on substrates of solar cells, and the resulting solar cells, are also described.
    Type: Grant
    Filed: May 22, 2017
    Date of Patent: April 21, 2020
    Assignee: SunPower Corporation
    Inventors: David D. Smith, Helen Liu, Tim Dennis, Jane Manning, Hsin-Chiao Luan, Ann Waldhauer, Genevieve A. Solomon, Brenda Pagulayan Malgapu, Joseph Ramirez
  • Patent number: 10608126
    Abstract: Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: March 31, 2020
    Assignee: SunPower Corporation
    Inventors: Gabriel Harley, David D. Smith, Tim Dennis, Ann Waldhauer, Taeseok Kim, Peter John Cousins
  • Publication number: 20200091366
    Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
    Type: Application
    Filed: November 22, 2019
    Publication date: March 19, 2020
    Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
  • Patent number: 10490685
    Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: November 26, 2019
    Assignee: SunPower Corporation
    Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
  • Publication number: 20190131463
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Application
    Filed: December 20, 2018
    Publication date: May 2, 2019
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Publication number: 20190131477
    Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
    Type: Application
    Filed: December 21, 2018
    Publication date: May 2, 2019
    Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
  • Patent number: 10170642
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: January 1, 2019
    Assignee: SunPower Corporation
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Patent number: 10170657
    Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
    Type: Grant
    Filed: November 19, 2015
    Date of Patent: January 1, 2019
    Assignee: SunPower Corporation
    Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
  • Publication number: 20180219108
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Application
    Filed: January 22, 2018
    Publication date: August 2, 2018
    Inventors: David D. SMITH, Tim DENNIS, Russelle De Jesus TABAJONDA
  • Publication number: 20180069136
    Abstract: Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.
    Type: Application
    Filed: October 26, 2017
    Publication date: March 8, 2018
    Inventors: Gabriel Harley, David Smith, Tim Dennis, Ann Waldhauer, Taeseok Kim, Peter John Cousins
  • Patent number: 9899542
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: February 20, 2018
    Assignee: SunPower Corporation
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Patent number: 9831359
    Abstract: Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.
    Type: Grant
    Filed: January 7, 2016
    Date of Patent: November 28, 2017
    Assignee: SunPower Corporation
    Inventors: Gabriel Harley, David D. Smith, Tim Dennis, Ann Waldhauer, Taeseok Kim, Peter John Cousins
  • Publication number: 20170263795
    Abstract: Methods of fabricating emitter regions of solar cells are described. Methods of forming layers on substrates of solar cells, and the resulting solar cells, are also described.
    Type: Application
    Filed: May 22, 2017
    Publication date: September 14, 2017
    Inventors: David D. Smith, Helen Liu, Tim Dennis, Jane Manning, Hsin-Chiao Luan, Ann Waldhauer, Genevieve A. Solomon, Brenda Pagulayan Malgapu, Joseph Ramirez
  • Patent number: 9537030
    Abstract: Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: January 3, 2017
    Assignee: SunPower Corporation
    Inventors: Tim Dennis, Scott Harrington, Jane Manning, David D. Smith, Ann Waldhauer
  • Patent number: 9520507
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: December 13, 2016
    Assignee: SunPower Corporation
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Publication number: 20160329441
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Application
    Filed: July 18, 2016
    Publication date: November 10, 2016
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Patent number: D880803
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: April 7, 2020
    Inventors: Tim Frazier, Ron Dennis, Brent Nasset
  • Patent number: D880804
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: April 7, 2020
    Assignee: Westin Automotive Products, Inc.
    Inventors: Tim Frazier, Ron Dennis, Brent Nasset