Patents by Inventor Tim J. Makovicka

Tim J. Makovicka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a p-type shallow junction using diatomic arsenic
    Patent number: 6989302
    Abstract: The present invention provides, in one embodiment, a method of fabricating a semiconductor device (100). The method comprises exposing a portion (125) of an n-type substrate (105) to an arsenic dimer (130). The method also includes forming a p-type lightly doped drain (LDD) region (145) within the portion of the n-type substrate (125). Other embodiments advantageously incorporate the method into methods for making PMOS devices.
    Type: Grant
    Filed: May 5, 2003
    Date of Patent: January 24, 2006
    Assignee: Texas Instruments Incorporated
    Inventors: Tim J. Makovicka, Alan L. Kordick
  • Method for fabricating a p-type shallow junction using diatomic arsenic
    Publication number: 20040224470
    Abstract: The present invention provides, in one embodiment, a method of fabricating a semiconductor device (100). The method comprises exposing a portion (125) of an n-type substrate (105) to an arsenic dimer (130). The method also includes forming a p-type lightly doped drain (LDD) region (145) within the portion of the n-type substrate (125). Other embodiments advantageously incorporate the method into methods for making PMOS devices.
    Type: Application
    Filed: May 5, 2003
    Publication date: November 11, 2004
    Applicant: Texas Instruments, Incorporated
    Inventors: Tim J. Makovicka, Alan L. Kordick