Abstract: A PIC having at least three fiber-to-chip coupling locations, an InP-based polarization handling unit, at least two optical splitter-combiners, at least two optical receivers, and a plurality of semiconductor-based optical waveguides. The plurality of semiconductor-based optical waveguides are configured and arranged to optically connect a first fiber-to-chip coupling location with a first optical receiver via a first optical splitter-combiner, a second fiber-to-chip coupling location with the at least two optical receivers via the InP-based polarization handling unit and the at least two optical splitter-combiners, and a third fiber-to-chip coupling location with a second optical receiver via a second optical splitter-combiner. An opto-electronic system including said PIC.

Abstract: A PIC including a plurality of optically interconnectable functional photonic blocks and a reconfigurable optical connection arrangement having a plurality of semiconductor-based optical waveguides and a plurality of controllable optical switches, at least one controllable optical switch being configurable to be in a first state allowing optical transmission or a second state preventing optical transmission. Depending on the respective first or second state of the at least one controllable optical switch, the optical connection arrangement is configured to enable at least a first set of semiconductor-based optical waveguides to provide at least one optical connection between at least two functional photonic blocks and/or a first optical access path to at least one functional photonic block. An opto-electronic system including the PIC and to a method of improved determination of an overall performance of the PIC.

Abstract: A monitor photodiode for absorbing at most 5% of optical radiation to which the monitor photodiode is exposed if the monitor photodiode is in use. The monitor photodiode includes a layer stack having a semiconductor-based core layer, a semiconductor-based absorption layer, and a semiconductor-based cladding layer that is provided with an elevated elongated portion. The semiconductor-based absorption layer and the elevated elongated portion are arranged relative to each other in such a way that an overlap between a mode field of the optical radiation that is present in the semiconductor-based core layer if the monitor photodiode is in use and the semiconductor-based absorption layer results in an optical absorption of at most 5%. A PIC having a monitor photodiode, an opto-electronic system including such a PIC, and a method for fabricating the monitor photodiode.

Abstract: A monolithic InP-based PIC having a first photonic assembly that has a first optical splitter-combiner unit having a first end part that is optically connected with a first optical waveguide and a second end part that is optically connected with a first main photonic circuit and a first auxiliary photonic circuit. The first auxiliary photonic circuit has a first laser unit, and a first SOA. The first SOA is configurable to be in a first operational state in which the first SOA allows optical communication between the first laser unit and the first optical splitter-combiner unit, or a second operational state in which the first SOA prevents optical communication between the first laser unit and the first optical splitter-combiner unit. An opto-electronic system including the PIC.

Abstract: A PIC having at least three fiber-to-chip coupling locations, an InP-based polarization handling unit, at least two optical splitter-combiners, at least two optical receivers, and a plurality of semiconductor-based optical waveguides. The plurality of semiconductor-based optical waveguides are configured and arranged to optically connect a first fiber-to-chip coupling location with a first optical receiver via a first optical splitter-combiner, a second fiber-to-chip coupling location with the at least two optical receivers via the InP-based polarization handling unit and the at least two optical splitter-combiners, and a third fiber-to-chip coupling location with a second optical receiver via a second optical splitter-combiner. An opto-electronic system including said PIC.

Abstract: A PIC including a plurality of optically interconnectable functional photonic blocks and a reconfigurable optical connection arrangement having a plurality of semiconductor-based optical waveguides and a plurality of controllable optical switches, at least one controllable optical switch being configurable to be in a first state allowing optical transmission or a second state preventing optical transmission. Depending on the respective first or second state of the at least one controllable optical switch, the optical connection arrangement is configured to enable at least a first set of semiconductor-based optical waveguides to provide at least one optical connection between at least two functional photonic blocks and/or a first optical access path to at least one functional photonic block. An opto-electronic system including the PIC and to a method of improved determination of an overall performance of the PIC.

Abstract: A monolithic InP-based PIC having a first photonic assembly that has a first optical splitter-combiner unit having a first end part that is optically connected with a first optical waveguide and a second end part that is optically connected with a first main photonic circuit and a first auxiliary photonic circuit. The first auxiliary photonic circuit has a first laser unit, and a first SOA. The first SOA is configurable to be in a first operational state in which the first SOA allows optical communication between the first laser unit and the first optical splitter-combiner unit, or a second operational state in which the first SOA prevents optical communication between the first laser unit and the first optical splitter-combiner unit. An opto-electronic system including the PIC.

Abstract: An optical subassembly (1) includes a photonic integrated circuit (2), an external optical system (4) and an optical interface (6) that is arranged between the PIC and the external optical system. The optical subassembly includes a third material (7) and a fourth material (8). The third material (7) at least partially fills the optical interface between the PIC and the external optical system in order to minimize contamination of any kind. The fourth material (8) being in contact at least with the third material for sealing at least the third material from ambient moisture. In this way a low-cost near-hermetic environmental protection barrier (7, 8) may be provided. An optical system (14) including the optical subassembly and a method of fabricating such an optical subassembly are also described.

Abstract: An optical subassembly (1) includes a photonic integrated circuit (2), an external optical system (4) and an optical interface (6) that is arranged between the PIC and the external optical system. The optical subassembly includes a third material (7) and a fourth material (8). The third material (7) at least partially fills the optical interface between the PIC and the external optical system in order to minimize contamination of any kind. The fourth material (8) being in contact at least with the third material for sealing at least the third material from ambient moisture. In this way a low-cost near-hermetic environmental protection barrier (7, 8) may be provided. An optical system (14) including the optical subassembly and a method of fabricating such an optical subassembly are also described.

Abstract: A new and distinct cultivar of Mandevilla plant named ‘Sunpa 201’, characterized by its upright to outwardly spreading plant habit; vigorous growth habit; freely branching habit; early and freely flowering habit; long flowering period; and medium-sized speckled red and light purplish pink bi-colored flowers with light purplish pink-colored petal margins.

Abstract: A new and distinct cultivar of Mandevilla plant named ‘Sunpa 421’, characterized by its upright and compact plant habit; vigorous growth habit; freely branching habit; early and freely flowering habit; long flowering period; double-type flowers that are purplish pink in color; and good garden performance.

Abstract: A new and distinct cultivar of Mandevilla plant named ‘Sunpa 423’, characterized by its vining and climbing plant habit; vigorous growth habit; freely branching habit; freely flowering habit; long flowering period; double-type flowers that are deep red in color; and good garden performance.

Abstract: A new and distinct cultivar of Mandevilla plant named ‘Sunpa 13872’, characterized by its vining and climbing plant habit; vigorous growth habit; freely branching habit; freely flowering habit; long flowering period; flowers that are purplish red and light purplish pink bi-colored; and good garden performance.