Abstract: A stacked multijunction solar cell having a dielectric insulating layer system, a germanium substrate, which forms an underside of the multijunction solar cell, a germanium subcell and at least two III-V subcells, which follow each other in the specified order, the insulating layer system includes a layer sequence made up of at least one bottom insulating layer, which is integrally connected to a first surface section of the multijunction solar cell and a top insulating layer forming an upper side of the insulating layer system, and a metal coating of the multijunction solar cell is integrally and electrically conductively connected to a second surface section abutting the first surface section of the multijunction solar cell and is integrally connected to a section of the upper side of the insulating layer system, and the top insulating layer comprises amorphous silicon or is made up of amorphous silicon.

Abstract: A solar cell contact arrangement, having a semiconductor body with a top and a bottom, wherein the semiconductor body has multiple solar cell stacks and includes a support substrate on the bottom, and each solar cell stack has at least two III-V subcells arranged on the support substrate and at least one through-contact extending from the top to the bottom of the semiconductor body with a continuous side wall, wherein the through-contact has a first edge region on the top and a second edge region on the bottom, and the first edge region has a first section and a second, metallic section, and the second edge region has a first section and a second section, wherein the respective second sections completely enclose the respective first sections, and an insulating layer.

Abstract: A method for plating by means of a through-hole on a semiconductor wafer at least comprising the steps: providing a semiconductor wafer having a top side and a bottom side, wherein the semiconductor wafer has a plurality of solar cell stacks and comprises a substrate on the bottom side, and each solar cell stack has at least two III-V subcells, disposed on the substrate, and at least one through-hole, extending from the top side to the bottom side of the semiconductor wafer, with a continuous side wall, wherein the through-hole has a first edge region on the top side and a second edge region on the bottom side; applying an insulating layer to part of the first edge region, the side wall, and to the second edge region by means of a first printing process; and applying an electrically conductive layer.

Abstract: A stacked multijunction solar cell having a dielectric insulating layer system, a germanium substrate, which forms an underside of the multijunction solar cell, a germanium subcell and at least two III-V subcells, which follow each other in the specified order, the insulating layer system includes a layer sequence made up of at least one bottom insulating layer, which is integrally connected to a first surface section of the multijunction solar cell and a top insulating layer forming an upper side of the insulating layer system, and a metal coating of the multijunction solar cell is integrally and electrically conductively connected to a second surface section abutting the first surface section of the multijunction solar cell and is integrally connected to a section of the upper side of the insulating layer system, and the top insulating layer comprises amorphous silicon or is made up of amorphous silicon.

Abstract: A method including: providing a structure comprising: a spalled layer having a first side and a second side; and a tape layer provided on the first side of the spalled layer, wherein the tape layer is provided at below a first temperature range; applying a temporary substrate layer to the second side of the spalled layer, wherein the temporary substrate layer is applied at a second temperature range, and wherein at least a portion of the second temperature range is lower than the first temperature range; and after applying the temporary substrate layer, separating the tape layer from the spalled layer.

Abstract: A method including: providing a structure comprising: a spalled layer having a first side and a second side; and a tape layer provided on the first side of the spalled layer, wherein the tape layer is provided at below a first temperature range; applying a temporary substrate layer to the second side of the spalled layer, wherein the temporary substrate layer is applied at a second temperature range, and wherein at least a portion of the second temperature range is lower than the first temperature range; and after applying the temporary substrate layer, separating the tape layer from the spalled layer.

Abstract: A method including: providing a structure comprising: a spalled layer having a first side and a second side; and a tape layer provided on the first side of the spalled layer, wherein the tape layer is provided at below a first temperature range; applying a temporary substrate layer to the second side of the spalled layer, wherein the temporary substrate layer is applied at a second temperature range, and wherein at least a portion of the second temperature range is lower than the first temperature range; and after applying the temporary substrate layer, separating the tape layer from the spalled layer.

Abstract: A method including: providing a structure comprising: a spalled layer having a first side and a second side; and a tape layer provided on the first side of the spalled layer, wherein the tape layer is provided at below a first temperature range; applying a temporary substrate layer to the second side of the spalled layer, wherein the temporary substrate layer is applied at a second temperature range, and wherein at least a portion of the second temperature range is lower than the first temperature range; and after applying the temporary substrate layer, separating the tape layer from the spalled layer.

Abstract: A solar cell and to a method for producing a solar cell is provided. The solar cell includes a semi-conductor substrate with doped regions (2a, 2b). Contact structures (3b, 3c) which are connected to the doped regions (2a, 2b) and connecting structures (4a, 4b) which are superimposed are arranged on one side of the semi-conductor substrate. The connecting structures (4a, 4b) are connected to the contact structures (3b, 3c) through openings (9) in an intermediate insulating layer (5).