Patents by Inventor Tim Makovicka

Tim Makovicka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a p-type shallow junction using diatomic arsenic
    Publication number: 20060011987
    Abstract: The present invention provides, in one embodiment, a method of fabricating a semiconductor device (100). The method comprises exposing a portion (125) of an n-type substrate (105) to an arsenic dimer (130). The method also includes forming a p-type lightly doped drain (LDD) region (145) within the portion of the n-type substrate (125). Other embodiments advantageously incorporate the method into methods for making PMOS devices.
    Type: Application
    Filed: September 20, 2005
    Publication date: January 19, 2006
    Inventors: Tim Makovicka, Alan Kordick