Abstract: An Fe—Co—Al alloy magnetic thin film contains, in terms of atomic ratio, 20% to 30% Co and 1.5% to 2.5% Al. The Fe—Co—Al alloy magnetic thin film has a crystallographic orientation such that the (100) plane is parallel to a substrate surface and the <100> direction is perpendicular to the substrate surface. The Fe—Co—Al alloy magnetic thin film has good magnetic properties, that is, a magnetization of 1440 emu/cc or more, a coercive force of less than 100 Oe, a damping factor of less than 0.01, and an FMR linewidth ?H at 30 GHz of less than 70 Oe.

Abstract: An Fe—Co—Si alloy magnetic thin film contains, in terms of atomic ratio, 20% to 25% Co and greater than 0% to 20% Si. The Fe—Co—Si alloy magnetic thin film primarily has a body-centered cubic crystal structure. Among three <100> directions of the crystal structure, one of the three <100> directions is perpendicular to a substrate surface and the other two <100> directions are parallel to the substrate surface. The Fe—Co—Si alloy magnetic thin film deposited onto MgO (100) has suitable magnetic properties, that is, a high magnetization of 1100 to 1725 emu/cc, a coercive force of less than 95 Oe, and an effective damping parameter of less than 0.001.

Abstract: The invention relates to a Wheatstone bridge containing bridge elements that are connected in a conventional manner and consisting of a spin-valve system, in addition to a method for producing the same. The aim of the invention is to produce a Wheatstone bridge, in which respective half-bridges lying adjacent to one another have a respective non-parallel bias magnetisation direction. To achieve this, the respective bridge elements that are not adjacent (1, 3 or 2, 4) are provided with a doping of implantable ions in quantities of between 1.1012 and 5.1016 atoms/cm2 beneath the pinned ferromagnetic layer of a GMR- or TMR-spin-valve layer system.

Abstract: The invention relates to a Wheatstone bridge containing bridge elements that are connected in a conventional manner and consisting of a spin-valve system, in addition to a method for producing the same. The aim of the invention is to produce a Wheatstone bridge, in which respective half-bridges lying adjacent to one another have a respective non-parallel bias magnetisation direction. To achieve this, the respective bridge elements that are not adjacent (1, 3 or 2, 4) are provided with a doping of implantable ions in quantities of between 1.1012 and 5.1016 atoms/cm2 beneath the pinned ferromagnetic layer of a GMR- or TMR-spin-valve layer system.