Abstract: Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

Abstract: Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device.

Abstract: Embodiments of the invention generally relate to memory devices and methods for fabricating such memory devices. In one embodiment, a method for fabricating a resistive switching memory device includes depositing a metallic layer on a lower electrode disposed on a substrate and exposing the metallic layer to an activated oxygen source while heating the substrate to an oxidizing temperature within a range from about 300° C. to about 600° C. and forming a metal oxide layer from an upper portion of the metallic layer during an oxidation process. The lower electrode contains a silicon material and the metallic layer contains hafnium or zirconium. Subsequent to the oxidation process, the method further includes heating the substrate to an annealing temperature within a range from greater than 600° C. to about 850° C. while forming a metal silicide layer from a lower portion of the metallic layer during a silicidation process.

Abstract: Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device.

Abstract: The applicants disclose a thin film magnetic media structure with a pre-seed layer of CrTi. The CrTi pre-seed layer presents an amorphous or nanocrystalline structure. The preferred seed layer is RuAl for use with the CrTi pre-seed layer. The use of the CrTi/RuAl bilayer structure provides superior adhesion to the substrate and resistance to scratching, as well as, excellent coercivity and signal-to-noise ratio (SNR) and reduced cost over the prior art. One embodiment of the invention sputter-deposits a CrTi pre-seed layer and a RuAl seed layer followed by an underlayer and at least one magnetic layer on a circumferentially polished substrate structure to achieve an Mrt orientation ratio greater than one. Two methods according to the invention allow the Mrt orientation ratio of the disk to be adjusted or maximized by varying the thickness of the RuAl seed layer and/or altering the atomic percentage of titanium in the pre-seed layer.

Abstract: A thin film magnetic media structure with a pre-seed layer of CrTi is disclosed. The CrTi pre-seed layer presents an amorphous or nanocrystalline structure. The preferred seed layer is RuAl for use with the CrTi pre-seed layer. The use of the CrTi/RuAl bilayer structure provides superior adhesion to the substrate and resistance to scratching, as well as, excellent coercivity and signal-to-noise ratio (SNR) and reduced cost over the prior art. One embodiment of the invention sputter-deposits a CrTi pre-seed layer and a RuAl seed layer followed by at least one underlayer and at least one magnetic layer on a circumferentially polished substrate structure to achieve an Mrt orientation ratio greater than one. Two methods according to the invention allow the Mrt orientation ratio of the disk to be adjusted or maximized by varying the thickness of the RuAl seed layer and/or altering the atomic percentage of titanium in the pre-seed layer.

Abstract: This invention provides a disk which has an in-plane oriented magnetic recording layer on a glass, ceramic, or other nonmetal substrate and a method for making the disc. A thin layer of texturable NiP is sputtered on the substrate. This NiP layer is textured before the magnetic layer is deposited. The disk combines all the advantages of a glass or ceramic substrate along with the advantages of an oriented magnetic medium.

Abstract: This invention provides a disk which has an in-plane oriented magnetic recording layer on a glass, ceramic, or other nonmetallic substrate and a method for making the disk. A thin layer of material is deposited on the substrate to form a texture stop layer. A texturable layer is then deposited on the texture stop layer. This texturable layer is textured before the magnetic layer is deposited. The disk combines all the advantages of a glass or ceramic substrate along with the advantages of an oriented magnetic medium.

Abstract: The thin film disk includes a pre-seed layer of amorphous or nanocrystalline structure which may be AlTi or AlTa, and that is deposited upon a disk substrate. The pre-seed layer is followed by the RuAl seed layer, a Cr alloy underlayer, an onset layer composed essentially of CoCr and a magnetic layer. The onset layer has an optimal concentration of 28-33 at. % Cr and an optimal thickness of 0.5 to 2.5 nm and it increases coercivity and improves the Signal-to-Noise Ratio (SNR) of the disk. The magnetic layer is comprised of CoPtxCrBy, wherein x is the at. % concentration of Pt, y is the at. % concentration of boron, and x>4+y.

Abstract: The thin film disk includes a pre-seed layer of amorphous or nanocrystalline structure which may be AlTi or Alta, and that is deposited upon a disk substrate. The pre-seed layer is followed by the RuAl seed layer, a Cr alloy underlayer, an onset layer composed essentially of CoCr and a magnetic layer. The magnetic layer is comprised of CoPtxCrBy, wherein x is the at. % concentration of Pt, y is the at. % concentration of boron, and x>4+y.

Abstract: The thin film disk includes a pre-seed layer of amorphous or nanocrystalline structure which may be CrTa or AlTi or AlTa, and that is deposited upon a disk substrate. The pre-seed layer is followed by the RuAl seed layer, a Cr alloy underlayer, an onset layer composed essentially of CoCr and a magnetic layer. The onset layer has an optimal concentration of 28-33 at. % Cr and an optimal thickness of 0.5 to 2.5 nm and it increases coercivity and improves the Signal-to-Noise Ratio (SNR) of the disk.

Abstract: A thin film magnetic media structure comprising a pre-seed layer CrTi is disclosed. The CrTi pre-seed layer presents an amorphous or nanocrystalline structure. The preferred seed layer is RuAl. The use of the CrTi/RuAl bilayer structure provides superior adhesion to the substrate and resistance to scratching, as well as, excellent coercivity and signal-to-noise ratio (SNR) and reduced cost over the prior art.

Abstract: The design of a magnetic thin film disk, for use in a disk drive, with an amorphous or nanocrystalline pre-seed layer preferably followed by a ruthenium-aluminum (RuAl) seed layer is described. The pre-seed layer may be CrTa or AlTi. The pre-seed layer deposited over a glass substrate, for example, allows a more strongly oriented RuAl seed layer to be deposited and, thus, favorably influences the orientation and grain size in the subsequent layers which include preferably at least one Cr alloy underlayer and at least one magnetic layer.

Abstract: In a thin film magnetic disk, a crystalline CrNi pre-seed layer is sputtered onto a substrate such as glass, followed by a RuAl seed layer. The CrNi pre-seed layer reduces grain size and its distribution, and improves in-plane crystallographic orientation, coercivity (Hc) and SNR. In a preferred embodiment the RuAl seed layer is followed by a Cr alloy underlayer. In a preferred embodiment the Cr alloy underlayer is followed by an onset layer and a magnetic layer, or by two or more magnetic layers antiferromagnetically coupled through one or more spacer layers. The crystalline CrNi pre-seed layer allows use of a thinner RuAl seed layer which results in smaller overall grain size, as well as a reduction in manufacturing cost due to relatively high cost of ruthenium. The CrNi pre-seed layer also allows use of a thinner Cr alloy underlayer which also contributes to reduce overall grain size.

Abstract: This invention provides a disk which has an in-plane oriented magnetic recording layer on a glass, ceramic, or other nonmetallic substrate and a method for making the disk. A thin layer of material is deposited on the substrate to form a texture stop layer. A texturable layer is then deposited on the texture stop layer. This texturable layer is textured before the magnetic layer is deposited. The disk combines all the advantages of a glass or ceramic substrate along with the advantages of an oriented magnetic medium.

Abstract: This invention provides a disk which has an in-plane oriented magnetic recording layer on a glass, ceramic, or other nonmetallic substrate and a method for making the disk. A thin layer of texturable NiP is sputtered on the substrate. This NiP layer is textured before the magnetic layer is deposited. The disk combines all the advantages of a glass or ceramic substrate along with the advantages of an oriented magnetic medium.

Abstract: A thin film magnetic media structure with a pre-seed layer of CrTi is disclosed. The CrTi pre-seed layer presents an amorphous or nanocrystalline structure. The preferred seed layer is RuAl for use with the CrTi pre-seed layer. The use of the CrTi/RuAl bilayer structure provides superior adhesion to the substrate and resistance to scratching, as well as, excellent coercivity and signal-to-noise ratio (SNR) and reduced cost over the prior art. One embodiment of the invention sputter-deposits a CrTi pre-seed layer and a RuAl seed layer followed by at least one underlayer and at least one magnetic layer on a circumferentially polished substrate structure to achieve an Mrt orientation ratio greater than one. Two methods according to the invention allow the Mrt orientation ratio of the disk to be adjusted or maximized by varying the thickness of the RuAl seed layer and/or altering the atomic percentage of titanium in the pre-seed layer.

Abstract: In a thin film magnetic disk, a crystalline CrNi pre-seed layer is sputtered onto a substrate such as glass, followed by a RuAl seed layer. The CrNi pre-seed layer reduces grain size and its distribution, and improves in-plane crystallographic orientation, coercivity (Hc) and SNR. In a preferred embodiment the RuAl seed layer is followed by a Cr alloy underlayer. In a preferred embodiment the Cr alloy underlayer is followed by an onset layer and a magnetic layer, or by two or more magnetic layers antiferromagnetically coupled through one or more spacer layers. The crystalline CrNi pre-seed layer allows use of a thinner RuAl seed layer which results in smaller overall grain size, as well as a reduction in manufacturing cost due to relatively high cost of ruthenium. The CrNi pre-seed layer also allows use of a thinner Cr alloy underlayer which also contributes to reduce overall grain size.

Abstract: A thin film magnetic media structure comprising a pre-seed layer CrTi is disclosed. The CrTi pre-seed layer presents an amorphous or nanocrystalline structure. The preferred seed layer is RuAl. The use of the CrTi/RuAl bilayer structure provides superior adhesion to the substrate and resistance to scratching, as well as, excellent coercivity and signal-to-noise ratio (SNR) and reduced cost over the prior art.

Abstract: A method for controlling the laser texturing of a magnetic disk by using a texturing laser system to create texturing bumps and an analyzing laser system to determine texture bump height and to provide feedback to the texturing laser system. From an angular distribution of an array of diffracted light intensities of the texturing bumps, the intensity of a first diffraction peak (Int1) and its array position (P1) are determined and utilized to calculate the average bump height h according to the equation: h=A/P1+B(Int1)+C where A, B and C are constants that are determined for a batch of disks by taking a representative sample of disks and texturing them with differing laser energies within the energy level range.