Abstract: A method of manufacturing an electromagnetic (EM) waveguide capable of guiding a wave along a pre-defined propagation path is described. The method includes providing a core region that extends along the propagation path and printing a colloidal crystal comprised of first particles on the waveguide core region.

Abstract: A display element corresponds to a pixel of a display. The display element includes a first electrode connected to a first addressable line of the display, and a number of second electrodes, each of which is connected to a corresponding second addressable line of the display. The display element includes a display mechanism situated between the first and the second electrodes, and which has a number of individually turned-on steps organized into a number of groups corresponding to the number of second electrodes. For each group of the individually turned-on steps, each step of the group has a turn-on voltage threshold at which the step is turned on upon a voltage applied between the first electrode and the second electrode to which the group corresponds that is equal to or greater than the turn-on voltage threshold.

Abstract: An optically retro-reflecting sphere includes an inner sphere and an outer concentric spherical shell, and can be coupled to a reflective surface. Light entering the optically retro-reflecting sphere from an incident direction is reflected by the sphere generally towards an exit direction, where the exit direction is parallel and opposite to the incident direction. The inner sphere and outer shell have different refractive indices, selected so that the reflected light is reflected with a non-uniform angular distribution about the exit direction.

Abstract: A method of manufacturing a power switching transistor for a fluid ejection device includes forming a first conductivity type region and a first diffused region within the first conductivity type region. The first diffused region has a first conductivity type and has a greater impurity concentration than the first conductivity type region. A gate is formed and is defined to have a thin oxide region and a thick oxide region. The thick oxide region and a first portion of the thin oxide region are disposed over the first conductivity type region and the thin oxide region is at a defined distance from the first diffused region.

Abstract: A method of manufacturing a power switching transistor for a fluid ejection device includes forming a first conductivity type region and a first diffused region within the first conductivity type region. The first diffused region has a first conductivity type and has a greater impurity concentration than the first conductivity type region. A gate is formed and is defined to have a thin oxide region and a thick oxide region. The thick oxide region and a first portion of the thin oxide region are disposed over the first conductivity type region and the thin oxide region is at a defined distance from the first diffused region.

Abstract: A method of manufacturing a fluidic channel through a substrate includes etching an exposed section on a first surface of the substrate, and coating the etched section of the substrate. The etching and the coating are alternatingly repeated until the fluidic channel is formed.

Abstract: A method of manufacturing a fluidic channel through a substrate includes etching an exposed section on a first surface of the substrate, and coating the etched section of the substrate. The etching and the coating are alternatingly repeated until the fluidic channel is formed.

Abstract: A fluid ejection device includes a substrate with a fluid drop generator, wherein the fluid drop generator is top coated with a first barrier layer. The device also has a second barrier layer substantially defining a chamber about the fluid drop generator, and at least one layer deposited in between the first and second barrier layers.

Abstract: The specification describes a multilevel metal CMOS integrated circuit wherein a first or lower level of metallization comprises strips of tungsten over aluminum. These strips are connected through vias in an inter-metal dielectric layer to an upper or second level of metallization which is photodefined in a desired pattern. The tungsten suppresses hillocks in the underlying aluminum during high temperature processing and also advantageously serves as an etch stop material during integrated circuit fabrication.