Patents by Inventor Tim Sammon
Tim Sammon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7274100Abstract: An integrated circuit which includes a circuit board having passive elements embedded in its body.Type: GrantFiled: June 23, 2004Date of Patent: September 25, 2007Assignee: International Rectifier CorporationInventors: Mark Pavier, Tim Sammon
-
Patent number: 7034344Abstract: An integrated semiconductor device which includes a plurality of power semiconductor devices formed in a common semiconductor die.Type: GrantFiled: July 8, 2004Date of Patent: April 25, 2006Assignee: International Rectifier CorporationInventors: Mark Pavier, Tim Sammon, Chris Davis
-
Publication number: 20050207133Abstract: A peripheral electronic system for an electronic device including a motherboard having multiple individual electrically connected vertically stacked modules, at least one of which is a circuit board assembly including active and/or passive electronic components embedded therein with the components being electrically connected by conductive traces to provide desired operating function. The peripheral electronic system further includes an electrical connector array on an exposed surface of the composite structure to provide electrical connections between the peripheral electronic system and the motherboard.Type: ApplicationFiled: March 11, 2005Publication date: September 22, 2005Inventors: Mark Pavier, Tim Sammon
-
Patent number: 6924175Abstract: A semiconductor package includes a lead frame having a displaced integral strap which is cupped out of a lead frame plane to provide a nest that receives a semiconductor chip electrically connected to an inner surface of the cupped strap. The semiconductor package further has a housing molded over and encapsulating the semiconductor chip with the frame such that a surface of the semiconductor chip facing away from the cupped strip is flush with or protrudes beyond a bottom of the housing.Type: GrantFiled: January 16, 2004Date of Patent: August 2, 2005Assignee: International Rectifier CorporationInventors: Mark Pavier, Tim Sammon, Rachel Anderson
-
Patent number: 6894397Abstract: A flip chip structure contains laterally spaced semiconductor devices such as MOSFETs in a common chip. A deep trench isolates the devices. Contacts are connected to the source drain and gate electrode (or other electrodes) and are interconnected as required for a circuit function either within the chip or on the support board. Ball contacts are connected to the electrodes. The opposite surface of the chip to that in which the devices are formed receives a copper or other metal layer which is patterned to increase its area for heat exchange. The surface of the copper is coated with black oxide to increase its ability to radiate heat.Type: GrantFiled: September 27, 2002Date of Patent: May 17, 2005Assignee: International Rectifier CorporationInventors: Mark Pavier, Tim Sammon
-
Publication number: 20050006750Abstract: An integrated semiconductor device which includes a plurality of power semiconductor devices formed in a common semiconductor die.Type: ApplicationFiled: July 8, 2004Publication date: January 13, 2005Inventors: Mark Pavier, Tim Sammon, Chris Davis
-
Publication number: 20040256738Abstract: An integrated circuit which includes a circuit board having passive elements embedded in its body.Type: ApplicationFiled: June 23, 2004Publication date: December 23, 2004Applicant: International Rectifier CorporationInventors: Mark Pavier, Tim Sammon
-
Publication number: 20040147061Abstract: A semiconductor package includes a lead frame having a displaced integral strap which is cupped out of a lead frame plane to provide a nest that receives a semiconductor chip electrically connected to an inner surface of the cupped strap. The semiconductor package further has a housing molded over and encapsulating the semiconductor chip with the frame such that a surface of the semiconductor chip facing away from the cupped strip is flush with or protrudes beyond a bottom of the housing.Type: ApplicationFiled: January 16, 2004Publication date: July 29, 2004Applicant: International Rectifier CorporationInventors: Mark Pavier, Tim Sammon, Rachel Anderson
-
Patent number: 6717260Abstract: A semiconductor package includes a lead frame having a displaced integral strap which is cupped out of a lead frame plane to provide a nest that receives a semiconductor chip electrically connected to an inner surface of the cupped strap. The semiconductor package further has a housing molded over and encapsulating the semiconductor chip with the frame such that a surface of the semiconductor chip facing away from the cupped strip is flush with or protrudes beyond a bottom of the housing.Type: GrantFiled: January 11, 2002Date of Patent: April 6, 2004Assignee: International Rectifier CorporationInventors: Mark Pavier, Tim Sammon, Rachel Anderson
-
Patent number: 6653740Abstract: A flip-chip MOSFET structure has a vertical conduction semiconductor die in which the lower layer of the die is connected to a drain electrode on the top of the die by a diffusion sinker or conductive electrode. The source and gate electrodes are also formed on the upper surface of the die and have coplanar solder balls for connection to a circuit board. The structure has a chip scale package size. The back surface of the die, which is inverted when the die is mounted may be roughened or may be metallized to improve removal of heat from the die. Several separate MOSFETs can be integrated side-by-side into the die to form a series connection of MOSFETs with respective source and gate electrodes at the top surface having solder ball connectors. Plural solder ball connectors may be provided for the top electrodes and are laid out in respective parallel rows. The die may have the shape of an elongated rectangle with the solder balls laid out symmetrically to a diagonal to the rectangle.Type: GrantFiled: February 9, 2001Date of Patent: November 25, 2003Assignee: International Rectifier CorporationInventors: Daniel M. Kinzer, Aram Arzumanyan, Tim Sammon
-
Patent number: 6593622Abstract: A driver stage consisting of an N channel FET and a P channel FET are mounted in the same package as the main power FET. The power FET is mounted on a lead frame and the driver FETs are mounted variously on a separate pad of the lead frame or on the main FET or on the lead frame terminals. All electrodes are interconnected within the package by mounting on common conductive surfaces or by wire bonding. The drivers are connected to define either an inverting or non-inverting drive.Type: GrantFiled: May 2, 2002Date of Patent: July 15, 2003Assignee: International Rectifier CorporationInventors: Daniel M. Kinzer, Tim Sammon, Mark Pavier, Adam I. Amali
-
Publication number: 20030062622Abstract: A flip chip structure contains laterally spaced semiconductor devices such as MOSFETs in a common chip. A deep trench isolates the devices. Contacts are connected to the source drain and gate electrode (or other electrodes) and are interconnected as required for a circuit function either within the chip or on the support board. Ball contacts are connected to the electrodes. The opposite surface of the chip to that in which the devices are formed receives a copper or other metal layer which is patterned to increase its area for heat exchange. The surface of the copper is coated with black oxide to increase its ability to radiate heat.Type: ApplicationFiled: September 27, 2002Publication date: April 3, 2003Applicant: International Rectifier Corp.Inventors: Mark Pavier, Tim Sammon
-
Publication number: 20020163040Abstract: A driver stage consisting of an N channel FET and a P channel FET are mounted in the same package as the main power FET. The power FET is mounted on a lead frame and the driver FETs are mounted variously on a separate pad of the lead frame or on the main FET or on the lead frame terminals. All electrodes are interconnected within the package by mounting on common conductive surfaces or by wire bonding. The drivers are connected to define either an inverting or non-inverting drive.Type: ApplicationFiled: May 2, 2002Publication date: November 7, 2002Applicant: International Rectifier Corp.Inventors: Daniel M. Kinzer, Tim Sammon, Mark Pavier, Adam I. Amali
-
Patent number: 6433424Abstract: Semiconductor die are soldered or epoxy bonded to lead frame pads and overhang the pads to reduce thermal differential expansion and contraction stresses applied to the die from the lead frame pad. A plastic housing of standard size is unchanged in dimension, but contains a greater total silicon die area.Type: GrantFiled: October 26, 2001Date of Patent: August 13, 2002Assignee: International Rectifier CorporationInventor: Tim Sammon
-
Publication number: 20020096749Abstract: A semiconductor package includes a lead frame having a displaced integral strap which is cupped out of a lead frame plane to provide a nest that receives a semiconductor chip electrically connected to an inner surface of the cupped strap. The semiconductor package further has a housing molded over and encapsulating the semiconductor chip with the frame such that a surface of the semiconductor chip facing away from the cupped strip is flush with or protrudes beyond a bottom of the housing.Type: ApplicationFiled: January 11, 2002Publication date: July 25, 2002Applicant: INTERNATIONAL RECTIFIER CORPORATIONInventors: Mark Pavier, Tim Sammon, Rachel Anderson
-
Publication number: 20020047198Abstract: Semiconductor die are soldered or epoxy bonded to lead frame pads and overhang the pads to reduce thermal differential expansion and contraction stresses applied to the die from the lead frame pad. A plastic housing of standard size is unchanged in dimension, but contains a greater total silicon die area.Type: ApplicationFiled: October 26, 2001Publication date: April 25, 2002Applicant: International Rectifier Corp.Inventor: Tim Sammon
-
Publication number: 20010045635Abstract: A flip-chip MOSFET structure has a vertical conduction semiconductor die in which the lower layer of the die is connected to a drain electrode on the top of the die by a diffusion sinker or conductive electrode. The source and gate electrodes are also formed on the upper surface of the die and have coplanar solder balls for connection to a circuit board. The structure has a chip scale package size. The back surface of the die, which is inverted when the die is mounted may be roughened or may be metallized to improve removal of heat from the die. Several separate MOSFETs can be integrated side-by-side into the die to form a series connection of MOSFETs with respective source and gate electrodes at the top surface having solder ball connectors. Plural solder ball connectors may be provided for the top electrodes and are laid out in respective parallel rows. The die may have the shape of an elongated rectangle with the solder balls laid out symmetrically to a diagonal to the rectangle.Type: ApplicationFiled: February 9, 2001Publication date: November 29, 2001Applicant: International Rectifier Corp.Inventors: Daniel M. Kinzer, Aram Arzumanyan, Tim Sammon
-
Patent number: RE41719Abstract: A driver stage consisting of an N channel FET and a P channel FET are mounted in the same package as the main power FET. The power FET is mounted on a lead frame and the driver FETs are mounted variously on a separate pad of the lead frame or on the main FET or on the lead frame terminals. All electrodes are interconnected within the package by mounting on common conductive surfaces or by wire bonding. The drivers are connected to define either an inverting or non-inverting drive.Type: GrantFiled: July 15, 2005Date of Patent: September 21, 2010Assignee: International Rectifier CorporationInventors: Daniel Kinzer, Tim Sammon, Mark Pavier, Adam Amali