Abstract: Embodiments relate to identifying frequencies to be protected at a victim integrated circuit (IC) and sending protection information including the identified frequencies to an aggressor IC. The aggressor IC configures its subsystems or circuits to operate using operating frequencies that prevents spurs that may interfere with the frequencies identified in the protection information. If not all of the frequencies in the protection information can be protected, the aggressor IC selects a subset of the frequencies to be protected. Then, the aggressor IC configures the operating frequencies of its subsystems or circuits so that spurs that they generate do not interfere with the selected frequencies.

Abstract: Embodiments relate to identifying frequencies to be protected at a victim integrated circuit (IC) and sending protection information including the identified frequencies to an aggressor IC. The aggressor IC configures its subsystems or circuits to operate using operating frequencies that prevents spurs that may interfere with the frequencies identified in the protection information. If not all of the frequencies in the protection information can be protected, the aggressor IC selects a subset of the frequencies to be protected. Then, the aggressor IC configures the operating frequencies of its subsystems or circuits so that spurs that they generate do not interfere with the selected frequencies.

Abstract: Embodiments relate to updating spur cancellation at a victim integrated circuit (IC) in accordance with dynamic changes in the operating frequencies of an aggressor IC. The aggressor IC changes its operating frequencies at an update time that is determined in advance. The update time and the changes to the operating frequencies are shared with the victim IC. The victim IC dynamically updates the relationships between frequencies of local clock signals for the victim IC and the aggressor IC. The victim IC generates a spur cancellation parameter based on the updated relationships of local clock frequencies, the update time and the changes to the operating frequencies of the aggressor IC, and configures a spur cancellation circuit. In this way, the victim IC may perform effective spur cancellation despite changes in the operating frequencies of the aggressor IC and deviation of the local clock frequencies.

Abstract: Embodiments relate to identifying frequencies to be protected at a victim integrated circuit (IC) and sending protection information including the identified frequencies to an aggressor IC. The aggressor IC configures its subsystems or circuits to operate using operating frequencies that prevents spurs that may interfere with the frequencies identified in the protection information. If not all of the frequencies in the protection information can be protected, the aggressor IC selects a subset of the frequencies to be protected. Then, the aggressor IC configures the operating frequencies of its subsystems or circuits so that spurs that they generate do not interfere with the selected frequencies.

Abstract: Identifying frequencies to be protected at a victim integrated circuit (IC) and sending protection information including the identified frequencies to an aggressor IC. The aggressor IC configures its subsystems or circuits to operate using operating frequencies that prevents spurs that may interfere with the frequencies identified in the protection information. If not all of the frequencies in the protection information can be protected, the aggressor IC selects a subset of the frequencies to be protected. Then, the aggressor IC configures the operating frequencies of its subsystems or circuits so that spurs that they generate do not interfere with the selected frequencies.

Abstract: A device may be controlled using a fingerprint input. Data indicative of a fingerprint is received from a sensor. It is determined that the fingerprint is associated with a first finger profile that is usable to distinguish a first finger from other fingers of a user of the device. A user control that is associated with the finger profile is identified. The user control is configured to control a setting of a function executing on the device. The user control is input to control the first setting.

Abstract: A device may be controlled using a fingerprint input. Data indicative of a fingerprint is received from a sensor. It is determined that the fingerprint is associated with a first finger profile that is usable to distinguish a first finger from other fingers of a user of the device. A user control that is associated with the finger profile is identified. The user control is configured to control a setting of a function executing on the device. The user control is input to control the first setting.

Abstract: A memory device includes a multi gate field effect transistor (MuGFET) having a fin with a contact area. A programmable memory element abuts the fin contact area.

Abstract: A memory device includes a multi gate field effect transistor (MuGFET) having a fin with a contact area. A programmable memory element abuts the fin contact area.

Abstract: A memory device includes a multi gate field effect transistor (MuGFET) having a fin with a contact area. A programmable memory element abuts the fin contact area.

Abstract: A memory arrangement includes an interface configured to transmit data in the form of data packets according to a predefined protocol. The memory arrangement includes at least two memory banks. Each memory bank includes at least one memory cell. The memory arrangement includes at least two memory bank access devices configured to facilitate accessing the data of the at least one memory cell of each of the at least two memory banks. The memory arrangement includes at least two data packet processing devices configured to encode and/or decode the data packets. The at least two data packet processing devices are assigned to different memory bank access devices.

Abstract: Nonvolatile memory cell, having a first resistor that is electrically programmable in a nonvolatile fashion, a second resistor that is electrically programmable in a nonvolatile fashion, a first leakage current reducing element connected between the first resistor and an operating potential, and a second leakage current reducing element connected between the second resistor and the operating potential.

Abstract: A memory element comprises a resistance element having a first resistance value in a first state and a second resistance value in a second state, it being possible to convert the resistance element from the first state into the second state and from the second state into the first state and the first resistance value and the second resistance value being different, a current generating device, coupled to a first terminal of the resistance element, the current generating device being designed to generate a current with a first amplitude through the resistance element when a predetermined potential is present at a second terminal of the resistance element, in order to convert the resistance element into the first state for setting the first resistance value, or to generate a current with a second amplitude through the resistance element when the predetermined potential is present at the second terminal of the resistance element, in order to convert the resistance element into the second state for setting the se

Abstract: The multi-context memory cell comprises a first memory means for storing an item of data information and also a plurality of second memory means, it being possible for the data information stored in the first memory means to be saved in each second memory means. Moreover, the memory cell comprises a means for saving the data information stored in the first memory means into one of the second memory means, and also a means for storing the digital data information stored in a selected second memory means into the first memory means.

Abstract: A device configured to parallelize N serial digital input signals includes at least M bit storage devices configured to each respectively store one bit of the N serial digital input signals and provide the one stored bit as a bit of a parallel digital output signal with a bit width M. M is greater than N and N is greater than 1. Symbols with a bit width M are transmitted via the N serial digital input signals such that each of the N serial digital input signals transmits a fraction of the respective symbol. A control device is configured to drive the plurality of bit storage devices cyclically such that at least M bits of the serial digital input signals, which belong to one symbol, are stored in the bit storage devices within a cycle.

Abstract: A logic basic cell, a logic basic cell arrangement, and a logic device. A logic basic cell is provided for forming a logic combination of two data signals in accordance with a logic function that can be selected by means of a plurality of logic selection elements, having four data signal inputs, to which two data signals and the logically complementary data signals thereof can be applied, and having six logic selection elements between the data signal inputs. At a data signal output, the logic combination of the two data signals in accordance with the logic function selected by means of the logic selection elements can be provided as output signal.

Abstract: A memory arrangement includes an interface configured to transmit data in the form of data packets according to a predefined protocol. The memory arrangement includes at least two memory banks. Each memory bank includes at least one memory cell. The memory arrangement includes at least two memory bank access devices configured to facilitate accessing the data of the at least one memory cell of each of the at least two memory banks. The memory arrangement includes at least two data packet processing devices configured to encode and/or decode the data packets. The at least two data packet processing devices are assigned to different memory bank access devices.

Abstract: Nonvolatile memory cell, having a first resistor that is electrically programmable in a nonvolatile fashion, a second resistor that is electrically programmable in a nonvolatile fashion, a first leakage current reducing element connected between the first resistor and an operating potential, and a second leakage current reducing element connected between the second resistor and the operating potential.

Abstract: The multi-context memory cell comprises a first memory means for storing an item of data information and also a plurality of second memory means, it being possible for the data information stored in the first memory means to be saved in each second memory means. Moreover, the memory cell comprises a means for saving the data information stored in the first memory means into one of the second memory means, and also a means for storing the digital data information stored in a selected second memory means into the first memory means.

Abstract: The non-volatile memory cell has a volatile memory means for storing an item of binary information. Furthermore, the memory cell comprises only a single programmable resistance element for non-volatile saving of the stored information and a means for saving the information in the resistance element. A means for retrieving the saved information is additionally present.