Patents by Inventor Tim W. Luk

Tim W. Luk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Schottky diode structure with localized diode well
    Patent number: 5150177
    Abstract: An improved Schottky diode structure (4) is formed by retrograde diffusing an N.sup.+ concentration of relatively fast diffusing atoms, preferably Phosphorus atoms, to form a localized diode NWell (6) as the diode substrate for the diode. A buried diode layer (5) formed of relatively slow diffusing N type atoms, preferably Antimony atoms, underlies the diode NWell and electrically couples the diode junction (7) to the diode ohmic contact (9). A diode ohmic contact region (31) underlies the ohmic contact, further coupling the diode junction to the ohmic contact. Preferably, the diode junction is a Platinum-Silicide junction.
    Type: Grant
    Filed: December 6, 1991
    Date of Patent: September 22, 1992
    Assignee: National Semiconductor Corporation
    Inventors: Murray J. Robinson, Christopher C. Joyce, Tim W. Luk