Patents by Inventor Tim Weidman

Tim Weidman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Damascene structure fabricated using a layer of silicon-based photoresist material
    Patent number: 6825562
    Abstract: A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.
    Type: Grant
    Filed: November 8, 2002
    Date of Patent: November 30, 2004
    Assignee: Applied Materials Inc.
    Inventors: Mehul B. Naik, Tim Weidman, Dian Sugiarto, Allen Zhao
  • Process and an integrated tool for low k dielectric deposition including a pecvd capping module
    Publication number: 20040020601
    Abstract: A series of modular apparatuses for processing substrates using a unique combinations of a substrate coating subsystem, a substrate curing subsystem and a PECVD-based capping subsystem. The individual subsystems are capable of being combined with one another for creating unique integrated substrate processing apparatuses that enable combined processing by the coating, curing and capping subsystems in an integrated and controlled environment, thus enabling the processing of substrates in an efficient manner, while minimizing the exposure of the substrates to an external environment and minimizing the condensation of vapors while the substrate is processed by the cure and capping subsystems.
    Type: Application
    Filed: July 29, 2003
    Publication date: February 5, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Jun Zhao, Farhad Moghadam, Tim Weidman, Rick J. Roberts, Hari Ponnekanti, Chau T. Nguyen, Satish Sundar, David H. Quach, Sasson Somekh
  • Damascene structure fabricated using a layer of silicon-based photoresist material
    Publication number: 20030062627
    Abstract: A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.
    Type: Application
    Filed: November 8, 2002
    Publication date: April 3, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Mehul B. Naik, Tim Weidman, Dian Sugiarto, Allen Zhao
  • Damascene structure fabricated using a layer of silicon-based photoresist material
    Patent number: 6514857
    Abstract: A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.
    Type: Grant
    Filed: February 16, 2001
    Date of Patent: February 4, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Mehul B. Naik, Tim Weidman, Dian Sugiarto, Allen Zhao
  • Damascene structure fabricated using a layer of silicon-based photoresist material
    Patent number: 6204168
    Abstract: A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.
    Type: Grant
    Filed: February 2, 1998
    Date of Patent: March 20, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Mehul B. Naik, Tim Weidman, Dian Sugiarto, Allen Zhao