Patents by Inventor Tim Weidman

Tim Weidman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250165649
    Abstract: The present disclosure provides a method for securing document content. A document security manager receives a digital document containing original text and image content. The original text content is processed to identify text portions by parsing annotations, analyzing proximate text, extracting content within the determined scope, and determining encryption attributes. The original image content is processed to identify image portions by detecting user-defined selections or employing a neural network to identify sensitive objects. Encrypt content requests are generated including the identified text and image portions with associated attributes and metadata. The requests are transmitted to a cryptographic engine, which returns encrypted content. A partially encrypted document is built by replacing original content with masking symbols, applying visual obfuscation, embedding encrypted content as metadata, and updating document properties to indicate encrypted content.
    Type: Application
    Filed: November 17, 2024
    Publication date: May 22, 2025
    Applicant: NTT Research, Inc.
    Inventors: Nat Bongiovanni, Jean-Philippe Cabay, Takashi Goto, Pascal Mathis, Farid Shahlavi, Tim Weidman, Paul Yu
  • Patent number: 6825562
    Abstract: A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.
    Type: Grant
    Filed: November 8, 2002
    Date of Patent: November 30, 2004
    Assignee: Applied Materials Inc.
    Inventors: Mehul B. Naik, Tim Weidman, Dian Sugiarto, Allen Zhao
  • Publication number: 20040020601
    Abstract: A series of modular apparatuses for processing substrates using a unique combinations of a substrate coating subsystem, a substrate curing subsystem and a PECVD-based capping subsystem. The individual subsystems are capable of being combined with one another for creating unique integrated substrate processing apparatuses that enable combined processing by the coating, curing and capping subsystems in an integrated and controlled environment, thus enabling the processing of substrates in an efficient manner, while minimizing the exposure of the substrates to an external environment and minimizing the condensation of vapors while the substrate is processed by the cure and capping subsystems.
    Type: Application
    Filed: July 29, 2003
    Publication date: February 5, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Jun Zhao, Farhad Moghadam, Tim Weidman, Rick J. Roberts, Hari Ponnekanti, Chau T. Nguyen, Satish Sundar, David H. Quach, Sasson Somekh
  • Publication number: 20030062627
    Abstract: A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.
    Type: Application
    Filed: November 8, 2002
    Publication date: April 3, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Mehul B. Naik, Tim Weidman, Dian Sugiarto, Allen Zhao
  • Patent number: 6514857
    Abstract: A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.
    Type: Grant
    Filed: February 16, 2001
    Date of Patent: February 4, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Mehul B. Naik, Tim Weidman, Dian Sugiarto, Allen Zhao
  • Patent number: 6204168
    Abstract: A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.
    Type: Grant
    Filed: February 2, 1998
    Date of Patent: March 20, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Mehul B. Naik, Tim Weidman, Dian Sugiarto, Allen Zhao