Abstract: The invention relates to a device and a method for UV antisepsis, in particular for intracorporeal in vivo UV antisepsis on the human and animal body in the event of colonization with multiresistant pathogens (MRPs) such as methicillin-resistant Staphylococcus aureus (MRSA) and Staphylococcus epidermidis (MRSE). The device comprises a light emitting diode chip, LED chip, configured to emit radiation in the UVC spectral range, wherein the LED chip forms a light emitting diode, LED, with a package; a spectral filter element set up to limit the radiation emitted by the LED chip substantially to wavelengths below 235 nm; and an optical element for directional emission of the radiation emitted by the LED.

Abstract: The invention relates to a method for producing vertical through-contacts (micro-vias) in semi-conductor wafers in order to produce semi-conductor components, i.e. contacts on the front side of the wafer through the semi-conductor wafer to the rear side of the wafer. The invention also relates to a method which comprises the following steps: blind holes on the contact connection points are laser drilled from the rear side of the wafer into the semi-conductor substrate, the wafer is cleaned, the semi-conductor substrate is plasma etched in a material selected manner until the active layer stack of the wafer is reached, the active layer stack of the wafer is plasma etched in a material selective manner until the contacts, which are to be connected to the rear side of the wafer, are reached, a plating base is applied to the rear side of the wafer and into the blind holes and gold is applied by electrodeposition onto the metallizied rear side of the wafer and the blind holes.

Abstract: The invention relates to a method for producing vertical through-contacts (micro-vias) in semi-conductor wafers in order to produce semi-conductor components, i.e. contacts on the front side of the wafer through the semi-conductor wafer to the rear side of the wafer. The invention also relates to a method which comprises the following steps: blind holes on the contact connection points are laser drilled from the rear side of the wafer into the semi-conductor substrate, the wafer is cleaned, the semi-conductor substrate is plasma etched in a material selected manner until the active layer stack of the wafer is reached, the active layer stack of the wafer is plasma etched in a material selective manner until the contacts, which are to be connected to the rear side of the wafer, are reached, a plating base is applied to the rear side of the wafer and into the blind holes and gold is applied by electrodeposition onto the metallizied rear side of the wafer and the blind holes.