Patents by Inventor Tim Wisleder

Tim Wisleder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Robust transistors with fluorine treatment
    Patent number: 8669589
    Abstract: A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semiconductor device comprises providing a substrate and growing epitaxial layers on the substrate. Negative ions are introduced into the epitaxial layers to form a negative ion region to counter operating electric (E) fields in the semiconductor device. Contacts can be deposited on the epitaxial layers, either before or after formation of the negative ion region.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: March 11, 2014
    Assignee: Cree, Inc.
    Inventors: Yifeng Wu, Marcia Moore, Tim Wisleder, Primit Parikh
  • ROBUST TRANSISTORS WITH FLUORINE TREATMENT
    Publication number: 20110220966
    Abstract: A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semiconductor device comprises providing a substrate and growing epitaxial layers on the substrate. Negative ions are introduced into the epitaxial layers to form a negative ion region to counter operating electric (E) fields in the semiconductor device. Contacts can be deposited on the epitaxial layers, either before or after formation of the negative ion region.
    Type: Application
    Filed: May 20, 2011
    Publication date: September 15, 2011
    Inventors: YIFENG WU, Marcia Moore, Tim Wisleder, Primit Parikh
  • Robust transistors with fluorine treatment
    Patent number: 7955918
    Abstract: A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semiconductor device comprises providing a substrate and growing epitaxial layers on the substrate. Negative ions are introduced into the epitaxial layers to form a negative ion region to counter operating electric (E) fields in the semiconductor device. Contacts can be deposited on the epitaxial layers, either before or after formation of the negative ion region.
    Type: Grant
    Filed: October 20, 2009
    Date of Patent: June 7, 2011
    Assignee: Cree, Inc.
    Inventors: Yifeng Wu, Marcia Moore, Tim Wisleder, Primit Parikh
  • ROBUST TRANSISTORS WITH FLUORINE TREATMENT
    Publication number: 20100041188
    Abstract: A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semiconductor device comprises providing a substrate and growing epitaxial layers on the substrate. Negative ions are introduced into the epitaxial layers to form a negative ion region to counter operating electric (E) fields in the semiconductor device. Contacts can be deposited on the epitaxial layers, either before or after formation of the negative ion region.
    Type: Application
    Filed: October 20, 2009
    Publication date: February 18, 2010
    Inventors: YIFENG WU, MARCIA MOORE, TIM WISLEDER, PRIMIT PARIKH
  • Robust transistors with fluorine treatment
    Patent number: 7638818
    Abstract: A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semiconductor device comprises providing a substrate and growing epitaxial layers on the substrate. Negative ions are introduced into the epitaxial layers to form a negative ion region to counter operating electric (E) fields in the semiconductor device. Contacts can be deposited on the epitaxial layers, either before or after formation of the negative ion region.
    Type: Grant
    Filed: July 7, 2006
    Date of Patent: December 29, 2009
    Assignee: Cree, Inc.
    Inventors: Yifeng Wu, Marcia Moore, Tim Wisleder, Primit Parikh
  • Robust transistors with fluorine treatment
    Publication number: 20070114569
    Abstract: A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semiconductor device comprises providing a substrate and growing epitaxial layers on the substrate. Negative ions are introduced into the epitaxial layers to form a negative ion region to counter operating electric (E) fields in the semiconductor device. Contacts can be deposited on the epitaxial layers, either before or after formation of the negative ion region.
    Type: Application
    Filed: July 7, 2006
    Publication date: May 24, 2007
    Inventors: Yifeng Wu, Marcia Moore, Tim Wisleder, Primit Parikh