Abstract: A manufacturing method for a micromechanical component. The method includes: providing an ASIC component including first front and rear sides, a strip conductor unit being provided at the first front side; providing a MEMS component including second front and rear sides, a micromechanical functional element situated in a cavity at the second front side; bonding the first front side onto the second front side; back-thinning the first rear side; forming vias starting from the back-thinned first rear side and from a redistribution unit on the first rear side, the vias electrically connecting the strip conductor unit to the redistribution unit; forming electrical contact elements on the redistribution unit; and back-thinning the second rear side. The back-thinning of the first and second rear side taking place so that a thickness of the stack made up of ASIC component and MEMS component is less than 300 micrometers.

Abstract: A manufacturing method for a micromechanical component. The method includes: providing an ASIC component including first front and rear sides, a strip conductor unit being provided at the first front side; providing a MEMS component including second front and rear sides, a micromechanical functional element situated in a cavity at the second front side; bonding the first front side onto the second front side; back-thinning the first rear side; forming vias starting from the back-thinned first rear side and from a redistribution unit on the first rear side, the vias electrically connecting the strip conductor unit to the redistribution unit; forming electrical contact elements on the redistribution unit; and back-thinning the second rear side. The back-thinning of the first and second rear side taking place so that a thickness of the stack made up of ASIC component and MEMS component is less than 300 micrometers.

Abstract: A micromechanical structure for an acceleration sensor includes a movable seismic mass including electrodes, the seismic mass being attached to a substrate with the aid of an attachment element; first fixed counter electrodes attached to a first carrier plate; and second fixed counter electrodes attached to a second carrier plate, where the counter electrodes, together with the electrodes, are situated nested in one another in a sensing plane of the micromechanical structure, and where the carrier plates are situated nested in one another in a plane below the sensing plane, each being attached to a central area of the substrate with the aid of an attachment element.

Abstract: A micromechanical z-acceleration sensor, including a seismic mass element including a torsion spring; the torsion spring including an anchor element, with the aid of which the torsion spring is connected to a substrate; the torsion spring being connected at both ends to the seismic mass element with the aid of a bar-shaped connecting element designed as normal with respect to the torsion spring in the plane of the seismic mass element.

Abstract: A micromechanical structure for an acceleration sensor includes a movable seismic mass including electrodes, the seismic mass being attached to a substrate with the aid of an attachment element; first fixed counter electrodes attached to a first carrier plate; and second fixed counter electrodes attached to a second carrier plate, where the counter electrodes, together with the electrodes, are situated nested in one another in a sensing plane of the micromechanical structure, and where the carrier plates are situated nested in one another in a plane below the sensing plane, each being attached to a central area of the substrate with the aid of an attachment element.

Abstract: A field plate trench FET includes a substrate, a gate buried at least partly within the substrate, and a field plate disposed below the gate, both the gate and the field plate being disposed within a trench in the substrate and being surrounded by an insulator. A p-doped domain is disposed within the substrate below the trench. Also described is a semiconductor component having a substrate and a plurality of field plate trench FETs disposed within the substrate.

Abstract: A field plate trench FET includes a substrate, a gate buried at least partly within the substrate, and a field plate disposed below the gate, both the gate and the field plate being disposed within a trench in the substrate and being surrounded by an insulator. A p-doped domain is disposed within the substrate below the trench. Also described is a semiconductor component having a substrate and a plurality of field plate trench FETs disposed within the substrate.

Abstract: A micromechanical z-acceleration sensor, including a seismic mass element including a torsion spring; the torsion spring including an anchor element, with the aid of which the torsion spring is connected to a substrate; the torsion spring being connected at both ends to the seismic mass element with the aid of a bar-shaped connecting element designed as normal with respect to the torsion spring in the plane of the seismic mass element.

Abstract: A micromechanical sensor core for an inertial sensor, having a movable seismic mass, a defined number of anchor elements, by which the seismic mass is fastened on a substrate, a defined number of stop devices fastened on the substrate for stopping the seismic mass, a first springy stop element, a second springy stop element and a solid stop element being developed on the stop device. The stop elements are designed in such a way that the seismic mass is able to strike in succession against the first springy stop element, the second springy stop element and the solid stop element.

Abstract: A semiconductor system for a current sensor in a power semiconductor includes: on a substrate, a multiple arrangement of transistor cells having an insulated gate electrode, whose emitter terminals are connected in a first region via a first conductive layer to at least one output terminal and whose emitter terminals are connected in a second region via a second conductive layer to at least one sensor terminal, which is situated outside of a first cell region boundary, which encloses the transistor cells of the first region and the second region, a trench structure belonging to the first cell region boundary being developed between the transistor cells of the second region and the sensor terminal.

Abstract: A semiconductor system for a current sensor in a power semiconductor includes: on a substrate, a multiple arrangement of transistor cells having an insulated gate electrode, whose emitter terminals are connected in a first region via a first conductive layer to at least one output terminal and whose emitter terminals are connected in a second region via a second conductive layer to at least one sensor terminal, which is situated outside of a first cell region boundary, which encloses the transistor cells of the first region and the second region, a trench structure belonging to the first cell region boundary being developed between the transistor cells of the second region and the sensor terminal.

Abstract: A power switch component having a semiconductor switch and a contacting applied to a contact zone of the semiconductor switch is introduced. The contact zone has a semiconductor layer and a metal plating applied to the semiconductor layer. The semiconductor layer has at least one conducting region and at least one non-conducting region situated directly under the metal plating.

Abstract: A power switch component having a semiconductor switch and a contacting applied to a contact zone of the semiconductor switch is introduced. The contact zone has a semiconductor layer and a metal plating applied to the semiconductor layer. The semiconductor layer has at least one conducting region and at least one non-conducting region situated directly under the metal plating.