Patents by Inventor Timo Asikainen

Timo Asikainen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NbMC layers
    Patent number: 11233133
    Abstract: Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: January 25, 2022
    Assignee: ASM IP Holding B.V.
    Inventors: Chiyu Zhu, Timo Asikainen, Robert Brennan Milligan
  • TITANIUM ALUMINUM AND TANTALUM ALUMINUM THIN FILMS
    Publication number: 20210399111
    Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.
    Type: Application
    Filed: September 2, 2021
    Publication date: December 23, 2021
    Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
  • Titanium aluminum and tantalum aluminum thin films
    Patent number: 11139383
    Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.
    Type: Grant
    Filed: April 15, 2020
    Date of Patent: October 5, 2021
    Assignee: ASM IP HOLDING B.V.
    Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
  • Selective deposition of aluminum and nitrogen containing material
    Patent number: 10903113
    Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
    Type: Grant
    Filed: January 27, 2020
    Date of Patent: January 26, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Han Wang, Qi Xie, Delphine Longrie, Jan Willem Maes, David de Roest, Julian Hsieh, Chiyu Zhu, Timo Asikainen, Krzysztof Kachel, Harald Profijt
  • Selective deposition of aluminum and nitrogen containing material
    Patent number: 10847361
    Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: November 24, 2020
    Assignee: ASM IP HOLDING B.V.
    Inventors: Han Wang, Qi Xie, Delphine Longrie, Jan Willem Maes, David de Roest, Julian Hsieh, Chiyu Zhu, Timo Asikainen
  • SELECTIVE DEPOSITION OF ALUMINUM AND NITROGEN CONTAINING MATERIAL
    Publication number: 20200343089
    Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
    Type: Application
    Filed: February 11, 2020
    Publication date: October 29, 2020
    Inventors: Han Wang, Qi Xie, Delphine Longrie, Jan Willem Maes, David de Roest, Julian Hsieh, Chiyu Zhu, Timo Asikainen
  • TITANIUM ALUMINUM AND TANTALUM ALUMINUM THIN FILMS
    Publication number: 20200328285
    Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.
    Type: Application
    Filed: April 15, 2020
    Publication date: October 15, 2020
    Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
  • SELECTIVE DEPOSITION OF ALUMINUM AND NITROGEN CONTAINING MATERIAL
    Publication number: 20200266096
    Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
    Type: Application
    Filed: January 27, 2020
    Publication date: August 20, 2020
    Inventors: Han Wang, Qi Xie, Delphine Longrie, Jan Willem Maes, David de Roest, Julian Hsieh, Chiyu Zhu, Timo Asikainen, Krzysztof Kachel, Harald Profijt
  • Titanium aluminum and tantalum aluminum thin films
    Patent number: 10636889
    Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: April 28, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
  • Selective deposition of aluminum and nitrogen containing material
    Patent number: 10566185
    Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
    Type: Grant
    Filed: August 5, 2015
    Date of Patent: February 18, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Han Wang, Qi Xie, Delphine Longrie, Jan Willem Maes, David de Roest, Julian Hsieh, Chiyu Zhu, Timo Asikainen
  • Selective deposition of aluminum and nitrogen containing material
    Patent number: 10553482
    Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: February 4, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Han Wang, Qi Xie, Delphine Longrie, Jan Willem Maes, David de Roest, Julian Hsieh, Chiyu Zhu, Timo Asikainen, Krzysztof Kachel, Harald Profijt
  • NbMC LAYERS
    Publication number: 20190140067
    Abstract: Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.
    Type: Application
    Filed: January 4, 2019
    Publication date: May 9, 2019
    Applicant: ASM IP Holding B.V.
    Inventors: Chiyu Zhu, Timo Asikainen, Robert Brennan Milligan
  • SELECTIVE DEPOSITION OF ALUMINUM AND NITROGEN CONTAINING MATERIAL
    Publication number: 20190103303
    Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
    Type: Application
    Filed: October 12, 2018
    Publication date: April 4, 2019
    Inventors: Han Wang, Qi Xie, Delphine Longrie, Jan Willem Maes, David de Roest, Julian Hsieh, Chiyu Zhu, Timo Asikainen, Krzysztof Kachel, Harald Profijt
  • NbMC layers
    Patent number: 10211308
    Abstract: Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: February 19, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Chiyu Zhu, Timo Asikainen, Robert Brennan Milligan
  • TITANIUM ALUMINUM AND TANTALUM ALUMINUM THIN FILMS
    Publication number: 20190043962
    Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.
    Type: Application
    Filed: June 4, 2018
    Publication date: February 7, 2019
    Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
  • Selective deposition of aluminum and nitrogen containing material
    Patent number: 10121699
    Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: November 6, 2018
    Assignee: ASM IP HOLDING B.V.
    Inventors: Han Wang, Qi Xie, Delphine Longrie, Jan Willem Maes, David de Roest, Julian Hsieh, Chiyu Zhu, Timo Asikainen, Krzysztof Kachel, Harald Profijt
  • Titanium aluminum and tantalum aluminum thin films
    Patent number: 10002936
    Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: June 19, 2018
    Assignee: ASM IP HOLDING B.V.
    Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
  • SELECTIVE DEPOSITION OF ALUMINUM AND NITROGEN CONTAINING MATERIAL
    Publication number: 20170154806
    Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
    Type: Application
    Filed: February 14, 2017
    Publication date: June 1, 2017
    Inventors: Han Wang, Qi Xie, Delphine Longrie, Jan Willem Maes, David de Roest, Julian Hsieh, Chiyu Zhu, Timo Asikainen, Krzysztof Kachel, Harald Profijt
  • NbMC LAYERS
    Publication number: 20170117141
    Abstract: Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.
    Type: Application
    Filed: October 21, 2015
    Publication date: April 27, 2017
    Inventors: Chiyu Zhu, Timo Asikainen, Robert Brennan Milligan
  • SELECTIVE DEPOSITION OF ALUMINUM AND NITROGEN CONTAINING MATERIAL
    Publication number: 20170040164
    Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
    Type: Application
    Filed: August 5, 2015
    Publication date: February 9, 2017
    Inventors: Han Wang, Qi Xie, Delphine Longrie, Jan Willem Maes, David de Roest, Julian Hsieh, Chiyu Zhu, Timo Asikainen