Patents by Inventor Timo Hatanpaa

Timo Hatanpaa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Synthesis and use of precursors for ALD of tellurium and selenium thin films
    Patent number: 11814400
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se—containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Grant
    Filed: July 23, 2021
    Date of Patent: November 14, 2023
    Assignee: ASM International N.V.
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • Precursors and methods for atomic layer deposition of transition metal oxides
    Patent number: 11555242
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Grant
    Filed: July 2, 2019
    Date of Patent: January 17, 2023
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • SYNTHESIS AND USE OF PRECURSORS FOR ALD OF TELLURIUM AND SELENIUM THIN FILMS
    Publication number: 20210347795
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se—containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Application
    Filed: July 23, 2021
    Publication date: November 11, 2021
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • Synthesis and use of precursors for ALD of tellurium and selenium thin films
    Patent number: 11072622
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: July 27, 2021
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • PRECURSORS AND METHODS FOR ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDES
    Publication number: 20190382887
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Application
    Filed: July 2, 2019
    Publication date: December 19, 2019
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • SYNTHESIS AND USE OF PRECURSORS FOR ALD OF TELLURIUM AND SELENIUM THIN FILMS
    Publication number: 20190263848
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Application
    Filed: May 8, 2019
    Publication date: August 29, 2019
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • Precursors and methods for atomic layer deposition of transition metal oxides
    Patent number: 10344378
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Grant
    Filed: May 18, 2017
    Date of Patent: July 9, 2019
    Assignee: ASM International N.V.
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • Synthesis and use of precursors for ALD of tellurium and selenium thin films
    Patent number: 10308673
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Grant
    Filed: September 21, 2017
    Date of Patent: June 4, 2019
    Assignee: ASM International N.V.
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • SYNTHESIS AND USE OF PRECURSORS FOR ALD OF TELLURIUM AND SELENIUM THIN FILMS
    Publication number: 20180072764
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Application
    Filed: September 21, 2017
    Publication date: March 15, 2018
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • Metamaterial thin films
    Patent number: 9878516
    Abstract: A metamaterial thin film with plasmonic properties formed by depositing metallic films by atomic layer deposition onto a substrate to form a naturally occurring mosaic-like nanostructure having two-dimensional features with air gaps between the two-dimensional features. Due to the unique deposition nanostructure, plasmonic thin films of metal or highly conducting materials can be produced on any substrate, including fabrics and biological materials. In addition, these plasmonic materials can be used in conjunction with geometric patterns that may be used to create multiple resonance plasmonic metamaterials.
    Type: Grant
    Filed: March 5, 2013
    Date of Patent: January 30, 2018
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Orest J. Glembocki, Sharka M Prokes, Joshua D. Caldwell, Mikko Ritala, Markku Leskela, Jaakko Niinisto, Eero Santala, Timo Hatanpaa, Maarit Kariemi
  • Synthesis and use of precursors for ALD of tellurium and selenium thin films
    Patent number: 9783563
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: October 10, 2017
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • Atomic layer deposition of metal phosphates and lithium silicates
    Patent number: 9765431
    Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: September 19, 2017
    Assignee: ASM IP HOLDING B.V.
    Inventors: Jani Hamalainen, Jani Holopainen, Timo Hatanpaa, Mikko Ritala, Markku Leskela
  • PRECURSORS AND METHODS FOR ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDES
    Publication number: 20170253966
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Application
    Filed: May 18, 2017
    Publication date: September 7, 2017
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • Precursors and methods for atomic layer deposition of transition metal oxides
    Patent number: 9677173
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: June 13, 2017
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • ATOMIC LAYER DEPOSITION OF METAL PHOSPHATES AND LITHIUM SILICATES
    Publication number: 20160265110
    Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.
    Type: Application
    Filed: March 17, 2016
    Publication date: September 15, 2016
    Inventors: Jani Hamalainen, Jani Holopainen, Timo Hatanpaa, Mikko Ritala, Markku Leskela
  • PRECURSORS AND METHODS FOR ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDES
    Publication number: 20160258054
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Application
    Filed: May 18, 2016
    Publication date: September 8, 2016
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • Precursors and methods for atomic layer deposition of transition metal oxides
    Patent number: 9365926
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: June 14, 2016
    Assignee: ASM International N.V.
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • Atomic layer deposition of metal phosphates and lithium silicates
    Patent number: 9315894
    Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: April 19, 2016
    Assignee: ASM IP HOLDING B.V.
    Inventors: Jani Hamalainen, Jani Holopainen, Timo Hatanpaa, Mikko Ritala, Markku Leskela
  • SYNTHESIS AND USE OF PRECURSORS FOR ALD OF TELLURIUM AND SELENIUM THIN FILMS
    Publication number: 20160031919
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Application
    Filed: October 13, 2015
    Publication date: February 4, 2016
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • Process for producing oxide films
    Patent number: 9169557
    Abstract: Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.
    Type: Grant
    Filed: May 10, 2010
    Date of Patent: October 27, 2015
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Timo Hatanpaa, Marko Vehkamaki, Mikko Ritala, Markku Leskela