Abstract: A process for improving the quality of a crude pyrolysis oil originating from a pyrolysis of plastic waste is provided, the process comprising providing a crude pyrolysis oil originating from the pyrolysis of plastic waste, adjusting the pH value of the crude pyrolysis oil, resulting in a pretreated crude pyrolysis oil, performing a solid-liquid-separation of solid components and liquid components of the pretreated crude pyrolysis oil and/or subjecting the pretreated crude pyrolysis oil to a liquid-liquid-separation.

Abstract: Exemplary embodiments relate to a control circuit for a base station for transmitting energy to a receiver by means of an electric resonant circuit. The control circuit comprises an evaluation device which is designed to compare energy that has been transmitted to a receiver resonant circuit of the receiver with an energy set value. The control circuit is designed to alter the energy input into the receiver resonant circuit of the receiver by altering a resonant frequency of the resonant circuit on the basis of the result of the comparison.

Abstract: A component which was manufactured in a powder-bed production process, proceeding from a base plane. The component includes a finished part and a support structure. The finished part can be divided into an easy portion, which can be manufactured from the base plane without a support structure, and a difficult portion, which cannot be manufactured without a support structure. The support structure is connected to the easy portion by a first partial attachment and to the difficult portion by a second partial attachment. In order to simplify the subsequent processing, the first partial attachment has a plurality of connection points having an equivalent diameter of at most 1 mm.

Abstract: The invention relates, in particular, to structures of a dental and medical cone beam computed tomography (CBCT) apparatus. The basic construction of the apparatus includes two elongated frame parts (11, 21) out of which the first frame part (11) is arranged to support X-ray imaging means (14, 15) and wherein the frame parts (11, 21) are mechanically connected to each other via an articulated construction (22) so as to allow for tilting of the first frame part (11) supporting the X-ray imaging means (14, 15) with respect to the second frame part (21). At the proximity of the second end of the first and second elongated frame parts (11, 21) is arranged a locking mechanism (24) configured to enable connecting together and disconnecting the first and second elongated frame parts (11, 21).

Abstract: A dental or medical CT imaging apparatus including a first longitudinally extending frame part. A support construction extends substantially perpendicularly from the longitudinally extending frame part. An X-ray source and an image detector which together form an X-ray imaging assembly are mounted to the support construction. A first driving mechanism is provided to move the X-ray imaging assembly about a virtual or physical rotation axis. A control system having at least one operation mode that simultaneously controls the first driving mechanism and the X-ray imaging assembly is provided. The support construction includes at least one guiding mechanism configured to enable laterally moving at least one of the X-ray source and the image detector in relation to the support construction. A range of the lateral movement of at least one of the X-ray source and the image detector includes a base position and a first and a second extreme position.

Abstract: A semiconductor single-crystal silicon, is produced from a silicon substrate wafer containing interstitial oxygen in a concentration of more than 5 × 1016 AT/cm3 (new ASTM) by an RTA treatment of the wafer in a first heat treatment at a first temperature in a temperature range of not less than 1200° C. and not more than 1260° C. for a period of not less than 5 s and not more than 30 s, where the front side of the substrate wafer is exposed to an atmosphere containing argon; a second heat treatment at a second temperature in a temperature range of not less than 1150° C. and not more than 1190° C. for a period of not less than 15 s and not more than 20 s, where the front side of the wafer is exposed to an argon and ammonia, atmosphere, and a third heat treatment at a third temperature in a temperature range of not less than 1160° C. and not more than 1190° C. for a period of not less than 20 s and not more than 30 s, where the front side of the wafer is exposed to an atmosphere containing argon.

Abstract: A method produces a single-crystal silicon semiconductor wafer. A single-crystal silicon substrate wafer is double side polished. A front side of the substrate wafer is chemical mechanical polished (CMP). An epitaxial layer of single-crystal silicon is deposited on the front side of the substrate wafer. A first rapid thermal anneal (RTA) treatment is performed on the coated substrate wafer at 1275-1295° C. for 15-30 seconds in argon and oxygen, having oxygen of 0.5-2.0 vol %. The coated substrate wafer is then cooled at or below 800° C., with 100 vol % argon. A second RTA treatment is performed on the coated substrate wafer at a 1280-1300° C. for 20-35 seconds in argon. An oxide layer is removed from a front side of the coated substrate wafer. The front side of the coated substrate wafer is polished by CMP.

Abstract: A method produces a single-crystal silicon semiconductor wafer. A single-crystal silicon substrate wafer is double side polished. A front side of the substrate wafer is chemical mechanical polished (CMP). An epitaxial layer of single-crystal silicon is deposited on the front side of the substrate wafer. A first rapid thermal anneal (RTA) treatment is performed on the coated substrate wafer at 1275-1295° C. for 15-30 seconds in argon and oxygen, having oxygen of 0.5-2.0 vol %. The coated substrate wafer is then cooled at or below 800° C., with 100 vol % argon. A second RTA treatment is performed on the coated substrate wafer at a 1280-1300° C. for 20-35 seconds in argon. An oxide layer is removed from a front side of the coated substrate wafer. The front side of the coated substrate wafer is polished by CMP.

Abstract: The invention relates, in particular, to structures of dental and medical cone beam computed tomography (CBCT) imaging apparatus. The basic construction of the apparatus includes a substantially vertically extending frame part (11) which supports via a horizontally extending support construction (12) the X-ray imaging means (14, 15) of the apparatus. The apparatus includes a patient support structure (18) which extends substantially in parallel with and is essentially of the same length as the substantially vertically extending frame part (11).

Abstract: The invention relates, in particular, to structures of a dental and medical cone beam computed tomography (CBCT) apparatus. The basic construction of the apparatus includes two elongated frame parts (11, 21) out of which the first frame part (11) is arranged to support X-ray imaging means (14, 15) and wherein the frame parts (11, 21) are mechanically connected to each other via an articulated construction (22) so as to allow for tilting of the first frame part (11) supporting the X-ray imaging means (14, 15) with respect to the second frame part (21). At the proximity of the second end of the first and second elongated frame parts (11, 21) is arranged a locking mechanism (24) configured to enable connecting together and disconnecting the first and second elongated frame parts (11, 21).

Abstract: An aerial vehicle including: a central frame, a tail extending from the central frame along a first axis, arms extending from the central frame and able to rotate around a second axis, the angular position of the arm with respect to the second axis defining an arm rotation angle. The tail has a tail rotor spinning around a tail rotor axis, the tail rotor axis being parallel to a third axis orthogonal to both first axis and second axis. The free end of each arm is equipped with two thrust motors controlling spinning in opposite direction of two coaxial rotors. The two coaxial rotors define a double rotor axis and can tilt together with respect to another tilting axis, the tilting axis being perpendicular to the second axis, the angular position of the double rotor with respect to the double rotor axis defining a double rotor tilting angle.

Abstract: A semiconductor wafer made of single-crystal silicon has an oxygen concentration (new ASTM) of not less than 4.9×1017 atoms/cm3 and not more than 6.5×107 atoms/cm3 and a nitrogen concentration (new ASTM) of not less than 8×1012 atoms/cm3 and not more than 5×1013 atoms/cm3, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm, and whose mean density is not less than 3×108 cm?3 and not more than 4×109 cm?3, as determined by IR tomography.

Abstract: Semiconductor wafers useful for NAND circuitry and having a front side, a rear side, a middle and a periphery, have an Nv region which extends from the middle to the periphery; a denuded zone which extends from the front side to a depth of not less than 20 ?m into the interior of the semiconductor wafer, where the density of vacancies in the denuded zone, determined by means of platinum diffusion and DLTS is not more than 1×1013 vacancies/cm3; a concentration of oxygen of not less than 4.5×1017 atoms/cm3 and not more than 5.5×1017 atoms/cm3; a region in the interior of the semiconductor wafer which adjoins the denuded zone and has nuclei which can be developed by means of a heat treatment into BMDs having a peak density of not less than 6.0×109/cm3, where the heat treatment comprises heating the semiconductor wafer to a temperature of 800° C. over a period of four hours and to a temperature of 1000° C. over a period of 16 hours. The wafers are produced by a unique RTA treatment of Nv wafers.

Abstract: A semiconductor wafer comprising single-crystal silicon has defined concentrations of oxygen, nitrogen and hydrogen; the semiconductor wafer further contains BMD seeds having a density averaged over the radius of not less than 1×105 cm?3 and not more than 1×107 cm?3; surface defects having a density averaged over the radius of not less than 1100 cm?2; and BMDs, whose density is not lower than a lower limit of 5×108/cm3. The semiconductor wafers are produced by a process which enables obtention of the required ranges of concentrations of oxygen, nitrogen, hydrogen, BMD seeds, and BMD's.

Abstract: A rotor (10) for an electric motor has a force-transmission region (11) which is operatively connected to a motor shaft (12). A torque-transmission region (13) which is composed of fibre composite materials is adjacent to the force-transmission region (11). A magnetic connection region (14) and a region (15) for magnetic field guidance with magnets (16) are arranged on that side of the torque-transmission region (13) which is situated opposite the force-transmission region (11). The motor shaft can also be formed from fibre composite materials. Since the magnetic connection region (14) has a plastic which is provided with a magnetic or magnetizable filler, a rotor for an electric motor and also a motor shaft which interacts with said rotor which are of lightweight construction are provided, said rotor and motor shaft meeting the required performance criteria.

Abstract: A semiconductor wafer of single-crystal silicon includes: a polished front side and a back side; a denuded zone, which extends from the polished front side toward the back side to a depth of not less than 45 ?m; and a region adjacent to the denuded zone, the region having bulk micro defect (BMD) seeds, which are capable of being developed into BMDs. A density of the BMDs at a distance of 120 ?m from the front side is not less than 3×109 cm?3.

Abstract: Semiconductor wafers useful for NAND circuitry and having a front side, a rear side, a middle and a periphery, have an Nv region which extends from the middle to the periphery; a denuded zone which extends from the front side to a depth of not less than 20 ?m into the interior of the semiconductor wafer, where the density of vacancies in the denuded zone, determined by means of platinum diffusion and DLTS is not more than 1×1013 vacancies/cm3; a concentration of oxygen of not less than 4.5×1017 atoms/cm3 and not more than 5.5×1017 atoms/cm3; a region in the interior of the semiconductor wafer which adjoins the denuded zone and has nuclei which can be developed by means of a heat treatment into BMDs having a peak density of not less than 6.0×109/cm3, where the heat treatment comprises heating the semiconductor wafer to a temperature of 800° C. over a period of four hours and to a temperature of 1000° C. over a period of 16 hours. The wafers are produced by a unique RTA treatment of Nv wafers.

Abstract: A semiconductor wafer made of single-crystal silicon has an oxygen concentration (new ASTM) of not less than 4.9×1017 atoms/cm3 and not more than 6.5×107 atoms/cm3 and a nitrogen concentration (new ASTM) of not less than 8×1012 atoms/cm3 and not more than 5×1013 atoms/cm3, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm, and whose mean density is not less than 3×108 cm?3 and not more than 4×109 cm?3, as determined by IR tomography.

Abstract: Epitaxial wafers with a high concentration of BMD nuclei or developed BMDs just below a denuded zone, and having low surface roughness, are produced by forming an oxynitride layer on a purposefully oxidized epitaxial layer by a short RTA treatment in a nitriding atmosphere, removing the oxynitride layer, and then polishing the epitaxial surface.

Abstract: A rotor (10) for an electric motor has a force-transmission region (11) which is operatively connected to a motor shaft (12). A torque-transmission region (13) which is composed of fibre composite materials is adjacent to the force-transmission region (11). A magnetic connection region (14) and a region (15) for magnetic field guidance with magnets (16) are arranged on that side of the torque-transmission region (13) which is situated opposite the force-transmission region (11). The motor shaft can also be formed from fibre composite materials. Since the magnetic connection region (14) has a plastic which is provided with a magnetic or magnetizable filler, a rotor for an electric motor and also a motor shaft which interacts with said rotor which are of lightweight construction are provided, said rotor and motor shaft meeting the required performance criteria.