Abstract: A method for producing a micro-electromechanical oscillatory system. A carrier substrate with a first surface is provided and a first passivation layer is applied onto the first surface. A first polysilicon layer grows on top of the first passivation layer and/or the first surface of the carrier substrate and a second passivation layer is applied onto a second surface of the first polysilicon layer. A second polysilicon layer grows on top of the first polysilicon layer and/or the second passivation layer. A transducer element is applied onto a third surface of the second polysilicon layer. A first trench is produced through the carrier substrate and the first polysilicon layer in the direction of the transducer element. The first trench extends as far as the second passivation layer, such that an oscillatable transducer plate of the micro-electromechanical oscillatory system is produced adjoining the first trench using the second polysilicon layer.

Abstract: A method for producing a microelectromechanical oscillation system. A carrier substrate having a first surface is provided. A circumferential first trench is produced, which extends from the first surface at least partially through the carrier substrate. A passivation layer is applied to the first surface of the first carrier substrate and the first circumferential trench is at least partially filled with the passivation layer. A first polysilicon layer is grown on the passivation layer and/or the first surface of the carrier substrate. A transducer element of the microelectromechanical oscillation system is arranged on a second surface of the first polysilicon layer. A second trench is produced through the carrier substrate in the direction of the transducer element, which extends up to the passivation layer so that the oscillatable transducer plate of the microelectromechanical oscillation system is produced adjacent to the second trench using the first polysilicon layer.

Abstract: A micromechanical component. The micromechanical component includes: a mount; a displaceable part; and a first serpentine spring and a second serpentine spring which is embodied mirror-symmetrically with respect to the first serpentine spring in terms of a first plane of symmetry; a first actuator device and a second actuator device being embodied in such a way that by way of the first actuator device and the second actuator device, periodic deformations, mirror-symmetrical in terms of the first plane of symmetry, of the first serpentine spring and of the second serpentine spring are excitable; the micromechanical component also encompassing a first torsion spring and a second torsion spring that each extend along a rotation axis; and the displaceable part being displaceable, at least by way of the periodic and mirror-symmetrical deformations of the first serpentine spring and of the second serpentine spring, around the rotation axis with respect to the mount.

Abstract: An electrical contacting between a surrounding wiring and a conductor region. The conductor region is situated in a conductor layer above an SOI wafer or SOI chip. A cover layer is situated above the conductor layer and below the surrounding wiring. The cover layer has a contacting region. The contacting region is insulated from the rest of the cover layer by a first configuration of recesses. An opening is formed at least in the contacting region. A metallic material is situated in the opening. The metallic material connects the surrounding wiring and the conductor region.

Abstract: An apparatus and a method for monitoring a semiconductor component. A leakage current which flows through a first electrode and a second electrode of the semiconductor component is detected during operation of the semiconductor component, wherein the leakage current is compared, during a comparison, with a first limit value for the leakage current and an output is determined on the basis of a result of the comparison and/or wherein a time is determined at which an extreme point, in particular a maximum, of the leakage current occurs and an output is determined on the basis of the time, wherein the output comprises a state of the semiconductor component, and the output is output.

Abstract: A microelectronics device, in particular a thin-film electronics device, having at least one bearer substrate and having at least one pyramidally layered, piezo stack situated on the bearer substrate, which stack has at least one piezo element and at least one electrode, in particular a floor electrode, and having at least one contact opening situated on the at least one electrode. The microelectronics device has a diffusion blocking element that is situated on the at least one electrode at least partly at a distance from the piezo element, and/or the contact opening forms a contact surface that is at most as large as one one-thousandth of a surface of the at least one piezo element, and/or a length of an electrical path from the at least one contact opening to the at least one piezo element corresponds to at least twice the circumference of the at least one contact opening.

Abstract: A device and method for producing a semiconductor component. The method includes: arranging a dielectric layer between a first electrode and a second electrode of the semiconductor component, there being defects of a first defect type in the dielectric layer; determining a time period for movement of defects of the first defect type into a target position in the dielectric layer; determining a first voltage for the movement of said defects in the dielectric layer; applying the first voltage between the first electrode and the second electrode in the time period.

Abstract: A micromechanical vibration system. The system includes a micromechanical vibrating body with at least one micromirror. The micromirror extends in a first main extension plane and has a face reflective to incident light. The system further includes an electromagnetic drive unit comprising a coil body and at least two magnets. The coil body is arranged in a second main extension plane parallel to the first main extension plane. The coil body is arranged laterally and/or on a side opposite the reflective face of the micromirror and/or on a side facing the reflective face of the micromirror. The at least two magnets extend in a third main extension plane of the coil body parallel to the first and second main extension plane and are arranged on the side opposite the reflective face of the micromirror. A single first magnetic flux plate is arranged in an intermediate space between the magnets.

Abstract: A micromechanical device, in particular a micromirror device. The device has at least one first micromechanical component and one second micromechanical component. The first component and the second component are directly or indirectly joined to one another. The first micromechanical component has a first sub-body and at least one second sub-body. The first sub-body extends in a first plane and the second sub-body in a second plane different from the first plane. The first plane and the second plane extend parallel to one another and the first plane extends above the second plane. The second sub-body is arranged in a transitional region to the second micromechanical component. A second extent of the second sub-body in the longitudinal direction is greater than a first extent of the first sub-body in the longitudinal direction.

Abstract: A method for producing a microelectronic device, in particular a MEMS chip device, comprising at least one carrier substrate. At least one electrodynamic actuator made of a metal conductor formed at least largely of copper is applied to the carrier substrate in at least one method step. At least one piezoelectric actuator is applied to the carrier substrate in at least one further method step.

Abstract: An ultrasound transducer of a vehicle system includes a support member that attaches to and connects to the bottom portion of a membrane of the ultrasound transducer and supports the membrane, wherein the support member includes one or more cantilevers with a first end attaching to the membrane and a second end attaching to a support portion of the support member that attaches to the substrate, wherein the cantilever extends across and floats above the substrate, wherein the first end of the cantilever includes a stub extending away from a surface of the cantilever, wherein the stub extends away from the surface without contacting the substrate, wherein the one or more cantilevers includes one or more piezoelectric layers on the surface of the cantilever.

Abstract: An ultrasound transducer, wherein the ultrasound transducer includes a membrane including a top portion and a bottom portion, wherein the membrane is configured to vibrate and generate an ultrasound in response to voltage applied the transducer, wherein the membrane includes a perimeter including a plurality of sides and a top surface and a bottom surface with one or more feet extending away from the bottom surface; and a support member that attaches to and connects to the membrane and supports the membrane, wherein the support member includes one or more platforms extending to and attaching to the membrane and a substrate, wherein a first end of the platform connects to the membrane and includes a support portion, wherein the support portion away from the platform, wherein the platform includes the one or more piezoelectric layers, wherein the one or more platforms support and surround the membrane.

Abstract: An ultrasound transducer of a vehicle system, comprising a membrane configured to vibrate to generate an ultrasound when voltage is applied and further configured to vibrate in an out-of-plane movement, wherein the membrane includes a first piezoelectric film at a center of the membrane, a supporting member including a second piezoelectric film, the supporting member supporting and surrounding the membrane, wherein in response to a translation of motion or actuation from the membrane, the supporting member mode does not move when there is the out-of-plane movement from the membrane.

Abstract: A micromechanical oscillation system that is designed as a micromirror system. The micromechanical oscillation system includes a micromechanical oscillating body that includes at least one micromirror. The micromechanical oscillating body is designed to oscillate about an oscillation axis, in particular at a resonant frequency of the oscillating body. The micromechanical oscillating body has a total mass made up of mass elements. The mass elements are distributed as a function of a lateral horizontal spacing of the mass elements from the oscillation axis.

Abstract: A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. A first defect type and a second defect type, which is different from the first defect type, are also present in dielectric layer. The at least two different defect types accumulate at one of the two electrodes as a function of a main operating voltage applied between the first electrode and the second electrode, and of a main operating temperature that is present at characteristic times ?1 and ?2, and generate the maximum changes in barrier height ??1 and ??2 at the electrodes. ?1 and ??1 are associated with the first defect type, and ?2 and ??2 are associated with the second defect type. ?1<?2 and ??1<??2 apply.

Abstract: A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. In addition, at least two defect types different from one another are present in the dielectric layer. These at least two defect types different from one another move along localized defect states, each at an average effective distance, in the direction of one of the two electrodes as a function of an operating voltage that is applied between the first electrode and the second electrode, and an operating temperature that is present. The average effective distance is greater than 3.2 nm.

Abstract: A micromechanical oscillation system. The micromechanical oscillation system has a micromechanical oscillating body having at least one micromirror. In addition, the micromechanical oscillation system includes an electromagnetic drive unit which has a coil body and at least one magnet. The coil body essentially extends laterally to the micromirror. The at least one magnet extends underneath the coil body.

Abstract: Device and method for using a semiconductor component in which a dielectric layer is situated between a first electrode and a second electrode of the semiconductor component, defects of a first defect type being present in the dielectric layer. The method includes: operating the semiconductor component using a first voltage having a first polarity between the first electrode and the second electrode, determining whether or not a condition is met for switching over from operating the semiconductor component using the first voltage to operating the semiconductor component using a second voltage, which has a second polarity opposite the first polarity, continuing the operation of the semiconductor component using the first voltage if the condition is not met, and otherwise ending the operation of the semiconductor component using the first voltage, and operating the semiconductor component using the second voltage between the first electrode and the second electrode.

Abstract: A micromechanical micromirror array including a frame including a cutout, a micromirror device suspended on the frame in the area of the cutout in a first plane, a first pivoting vane device suspended on the frame protruding into the area of the cutout, coupled to the micromirror device via a first spring device, a second pivoting vane device suspended on the frame protruding into the area of the cutout, coupled to the micromirror device via a second spring device, a first drive device for deflecting the first pivoting vane device along a first axis, perpendicular to the first plane, and a second drive device for the antiphase deflection of the second pivoting vane device along the first axis.

Abstract: A microelectronics device, in particular a thin-film electronics device, having at least one bearer substrate and having at least one pyramidally layered, piezo stack situated on the bearer substrate, which stack has at least one piezo element and at least one electrode, in particular a floor electrode, and having at least one contact opening situated on the at least one electrode. The microelectronics device has a diffusion blocking element that is situated on the at least one electrode at least partly at a distance from the piezo element, and/or the contact opening forms a contact surface that is at most as large as one one-thousandth of a surface of the at least one piezo element, and/or a length of an electrical path from the at least one contact opening to the at least one piezo element corresponds to at least twice the circumference of the at least one contact opening.