Abstract: A light-emitting diode for an optoelectronic device or for an optoelectronic member, the light-emitting diode including a semiconductor core, a semiconductor shell, an implanted portion delimiting within the semiconductor shell at least one passivated portion and at least one active portion, the at least one passivated portion having a conductivity strictly lower than a conductivity of said at least one active portion.

Abstract: As described, a GaN-based light-emitting diode includes a n-GaN based electron injection region, a p-GaN based hole injection region, an active region located between the electron injection region and the hole injection region, configured to emit a light radiation, a hydrogen blocking layer, the light-emitting diode being wherein the hole injection region includes at least one activated portion and at least one inactivated portion such that the activated portion has an acceptor concentration at least ten times greater than an acceptor concentration of the inactivated portion, and in that the at least one inactivated portion is interposed between the electron injection region and the hydrogen blocking layer, so that the hydrogen blocking layer prevents a release of hydrogen from the inactivated portion. Also described is a method for manufacturing such an LED.

Abstract: A light-emitting diode for an optoelectronic device or for an optoelectronic member, the light-emitting diode including a semiconductor core, a semiconductor shell, an implanted portion delimiting within the semiconductor shell at least one passivated portion and at least one active portion, the at least one passivated portion having a conductivity strictly lower than a conductivity of said at least one active portion.