Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a gap filling process by means of a plasma-enhanced deposition process. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: Vapor phase methods of depositing a metal or a semimetal-comprising materials on a substrate are provided. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal-comprising material on the substrate. Further provided are materials and structures deposited by the disclosed methods, as well as deposition assemblies.

Abstract: Disclosed are methods and related systems for topography-selective depositions. Embodiments of presently described methods comprise employing a sacrificial gap filling fluid for selectively forming a material on a distal surface of a gap, and not on at least one of sidewalls of the gap and proximal surfaces. Further described are methods for filling a gap with a high quality material by means of a sacrificial gap filling fluid.

Abstract: Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one or more of a group 13 element and a group 15 element. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

Abstract: A method and system for forming material within a gap on a surface of a substrate using metal material are disclosed. An exemplary method includes forming a layer of meltable material overlying the substrate and heating the meltable material to a flow temperature to form molten material that flows within the gap.

Abstract: Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises a Si—H bond.

Abstract: Methods and systems for depositing a boron nitride film on a substrate are disclosed. More particularly, the disclosure relates to methods and systems that can be used for depositing a boron nitride film by a pulsed CVD process.

Abstract: Methods and systems for filling a gap comprised in the substrate with a gap filling fluid. The gap filling fluid is formed in a plasma with a first precursor and a second precursor.

Abstract: Aspects described herein provide a method of providing a precursor mixture of a first precursor and a second precursor to a reaction chamber. The method may comprise maintaining the first precursor in the first precursor vessel at a first precursor temperature and the second precursor in the second precursor vessel at a second precursor temperature. Fluid connections may be provided between the first precursor vessel and the mixing chamber, between the second precursor vessel and the mixing chamber, and between the mixing chamber and the reaction chamber. The reaction chamber is separate from the mixing chamber. The precursor mixture is formed in the mixing chamber by mixing the first precursor and the second precursor and then provided to the reaction chamber.

Abstract: A topology-selective deposition method is disclosed. An exemplary method includes depositing a first layer of material overlying a gap or feature on a substrate surface, depositing a second layer of material overlying the first layer of material, and selectively removing the first layer of material.

Abstract: Disclosed are methods and systems for filling a gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a gap filling process by means of a plasma-enhanced deposition process. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: Vapor phase methods of depositing a metal or a semimetal—comprising materials on a substrate are provided. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal—comprising material on the substrate. Further provided are materials and structures deposited by the disclosed methods, as well as deposition assemblies.

Abstract: Methods and systems suitable for gas-phase processes are disclosed. An exemplary method includes treating a top surface of a substrate to form a treated surface by exposing the top surface to a treatment gas and vacuum ultraviolet radiation and depositing flowable material by providing a precursor and a reactant to form a deposited material. The method can further comprise treating a top surface of the deposited material by providing a cure gas and vacuum ultraviolet radiation. Methods and systems can be used to obtain desired profiles of deposited material on a substrate surface comprising high aspect ratio features.

Abstract: Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises a Si—H bond.

Abstract: A topology-selective deposition method is disclosed. An exemplary method includes providing an inhibition agent comprising a first nitrogen-containing gas, providing a deposition promotion agent comprising a second nitrogen-containing gas to form an activated surface on one or more of a top surface, a bottom surface, and a sidewall surface relative to one or more of the other of the top surface, the bottom surface, and the sidewall surface, and providing a precursor to react with the activated surface to thereby selectively form material comprising a nitride on the activated surface.

Abstract: Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one or more of a group 13 element and a group 15 element. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

Abstract: A method and system for forming material within a gap on a surface of a substrate using metal material are disclosed. An exemplary method includes forming a layer of meltable material overlying the substrate and heating the meltable material to a flow temperature to form molten material that flows within the gap.

Abstract: Aspects described herein provide a method of providing a precursor mixture of a first precursor and a second precursor to a reaction chamber. The method may comprise maintaining the first precursor in the first precursor vessel at a first precursor temperature and the second precursor in the second precursor vessel at a second precursor temperature. Fluid connections may be provided between the first precursor vessel and the mixing chamber, between the second precursor vessel and the mixing chamber, and between the mixing chamber and the reaction chamber. The reaction chamber is separate from the mixing chamber. The precursor mixture is formed in the mixing chamber by mixing the first precursor and the second precursor and then provided to the reaction chamber.