Patents by Inventor Timothy A. STROBEL

Timothy A. STROBEL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Form of silicon and method of making the same
    Patent number: 10179740
    Abstract: The invention relates to a new phase of silicon, Si24, and a method of making the same. Si24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na4Si24 and a method of making the same. Na4Si24 may be used as a precursor to make Si24.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: January 15, 2019
    Assignee: CARNEGIE INSTITUTION OF WASHINGTON
    Inventors: Timothy A. Strobel, Duck Young Kim, Oleksandr O. Kurakevych
  • FORM OF SILICON AND METHOD OF MAKING THE SAME
    Publication number: 20170355605
    Abstract: The invention relates to a new phase of silicon, Si24, and a method of making the same. Si24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na4Si24 and a method of making the same. Na4Si24 may be used as a precursor to make Si24.
    Type: Application
    Filed: June 30, 2017
    Publication date: December 14, 2017
    Applicant: CARNEGIE INSTITUTION OF WASHINGTON
    Inventors: Timothy A. STROBEL, Duck Young KIM, Oleksandr O. KURAKEVYCH
  • Form of silicon and method of making the same
    Patent number: 9695051
    Abstract: The invention relates to a new phase of silicon, Si24, and a method of making the same. Si24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na4Si24 and a method of making the same. Na4Si24 may be used as a precursor to make Si24.
    Type: Grant
    Filed: July 8, 2014
    Date of Patent: July 4, 2017
    Assignee: CARNEGIE INSTITUTION OF WASHINGTON
    Inventors: Timothy A. Strobel, Duck Young Kim, Oleksandr O. Kurakevych
  • FORM OF SILICON AND METHOD OF MAKING THE SAME
    Publication number: 20160176716
    Abstract: The invention relates to a new phase of silicon, Si24, and a method of making the same. Si24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na4Si24 and a method of making the same. Na4Si24 may be used as a precursor to make Si24.
    Type: Application
    Filed: July 8, 2014
    Publication date: June 23, 2016
    Inventors: Timothy A. STROBEL, Duck Yooung KIM, Oleksander O. KURAKEVYCH