Abstract: Systems and methods for electrically testing electromigration in an electromigration test structure are disclosed herein. The systems include a voltage control portion, a current control portion, and a current regulating structure. The systems further include an electric current detector, a first system connection, and a second system connection. The systems also include a voltage detector, and a controller. In some embodiments of the methods, a voltage control portion regulates a high-side signal electric current to maintain a voltage difference below a voltage setpoint while a current control portion maintains the high-side signal electric current below a threshold current value. In some embodiments of the methods, one of the voltage difference and a magnitude of the high-side signal electric current is selected as a primary control parameter while the other is selected as a compliant control parameter.

Abstract: Probe systems, storage media, and methods for wafer-level testing over extended temperature ranges are disclosed herein. The methods are configured to test a plurality of devices under test (DUTs) present on a substrate. The probe systems are programmed to perform the methods. The storage media include computer-readable instructions that direct a probe system to perform the methods.

Abstract: Systems and methods for electrically testing electromigration in an electromigration test structure are disclosed herein. The systems include a voltage control portion, a current control portion, and a current regulating structure. The systems further include an electric current detector, a first system connection, and a second system connection. The systems also include a voltage detector, and a controller. In some embodiments of the methods, a voltage control portion regulates a high-side signal electric current to maintain a voltage difference below a voltage setpoint while a current control portion maintains the high-side signal electric current below a threshold current value. In some embodiments of the methods, one of the voltage difference and a magnitude of the high-side signal electric current is selected as a primary control parameter while the other is selected as a compliant control parameter.

Abstract: Probe systems, storage media, and methods for wafer-level testing over extended temperature ranges are disclosed herein. The methods are configured to test a plurality of devices under test (DUTs) present on a substrate. The probe systems are programmed to perform the methods. The storage media include computer-readable instructions that direct a probe system to perform the methods.