Abstract: Silicon-based high pressure sensor modules are manufactured in an array arrangement, incorporating a low temperature cofired ceramic (LTCC) substrate. The LTCC substrate can withstand high pressures. Bossed containers filled with oil are mounted on the substrate in an array. These bossed containers house the sensor cells which are composed of a sensor handle wafer and a diaphragm. The top surface of these bossed containers are flexible and deflect under pressure. By controlling the surface area and the thickness of the top surface, the pressure sensors can be configured to measure a wide range of pressures. The oil transfers pressure from the bossed container to the diaphragm of the sensor cell while protecting the sensor cell from high pressures and harsh media.

Abstract: A silicon-based high pressure sensor module incorporates a low temperature cofired ceramic (LTCC) substrate. The LTCC substrate can withstand high pressures. A bossed container filled with oil is mounted on the substrate and houses a sensor cell. The top surface of the bossed container is flexible and deflects under pressure. By controlling the surface area and the thickness of the top surface, the pressure sensor can be configured to measure a wide range of pressures. The oil transfers pressure from the bossed container to the diaphragm of the sensor cell while protecting the sensor cell from high pressures and harsh media.

Abstract: A silicon-based hydrogen pressure sensor module incorporates a low temperature cofired ceramic (LTCC) substrate that shields the cavity formed by the silicon membrane and cell body from hydrogen permeation. A bossed container filled with an oil material is mounted on the substrate and houses a sensor cell. The oil material may be impregnated with a hydrogen getter material.

Abstract: A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The capacitive plates are defined by etching the single-crystal silicon layers, and the capacitive gap therebetween is accurately established by wafer bonding, yielding a transducer that can be produced by high-volume manufacturing practices.