Patents by Inventor Timothy Bochman

Timothy Bochman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming cobalt interconnections on a substrate
    Patent number: 9758896
    Abstract: A wafer electroplating system has at least one first electroplating chamber having a first electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto a wafer at a first deposition rate. A second electroplating chamber has a second electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto the wafer at a second deposition rate faster than the first deposition rate. The first and second electroplating chambers are within an enclosure of a processing system. A robot moves a wafer among the first and second electroplating chambers.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: September 12, 2017
    Assignee: APPLIED Materials, Inc.
    Inventors: Roey Shaviv, John Lam, Timothy Bochman
  • FORMING COBALT INTERCONNECTIONS ON A SUBSTRATE
    Publication number: 20170159199
    Abstract: A wafer electroplating system has at least one first electroplating chamber having a first electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto a wafer at a first deposition rate. A second electroplating chamber has a second electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto the wafer at a second deposition rate faster than the first deposition rate. The first and second electroplating chambers are within an enclosure of a processing system. A robot moves a wafer among the first and second electroplating chambers.
    Type: Application
    Filed: February 23, 2017
    Publication date: June 8, 2017
    Inventors: Roey Shaviv, John Lam, Timothy Bochman
  • METHODS FOR FORMING COBALT INTERCONNECTS
    Publication number: 20160309596
    Abstract: A method for depositing metal in a feature on a workpiece includes forming a seed layer in a feature on a workpiece, wherein the seed layer includes a metal selected from the group consisting of cobalt and nickel; electrochemically depositing a first metallization layer on the seed layer, wherein electrochemically depositing the metallization layer includes using a plating electrolyte having a plating metal ion and a pH in the range of 6 to 13; and heat treating the workpiece after deposition of the first metallization layer.
    Type: Application
    Filed: April 15, 2015
    Publication date: October 20, 2016
    Inventors: Roey Shaviv, John W. Lam, Timothy Bochman, Jennifer Meng Chu Tseng
  • FORMING COBALT INTERCONNECTIONS ON A SUBSTRATE
    Publication number: 20160237587
    Abstract: A wafer electroplating system has at least one first electroplating chamber having a first electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto a wafer at a first deposition rate. A second electroplating chamber has a second electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto the wafer at a second deposition rate faster than the first deposition rate. The first and second electroplating chambers are within an enclosure of a processing system. A robot moves a wafer among the first and second electroplating chambers.
    Type: Application
    Filed: February 12, 2015
    Publication date: August 18, 2016
    Inventors: Roey Shaviv, John Lam, Timothy Bochman