Patents by Inventor Timothy C. Langtry

Timothy C. Langtry has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Decode circuitry coupled to a memory array
    Patent number: 11769538
    Abstract: In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.
    Type: Grant
    Filed: December 14, 2021
    Date of Patent: September 26, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Richard K. Dodge, Timothy C. Langtry
  • DECODE CIRCUITRY COUPLED TO A MEMORY ARRAY
    Publication number: 20220101899
    Abstract: In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.
    Type: Application
    Filed: December 14, 2021
    Publication date: March 31, 2022
    Inventors: Richard K. Dodge, Timothy C. Langtry
  • Decode circuitry coupled to a memory array
    Patent number: 11205465
    Abstract: In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.
    Type: Grant
    Filed: November 25, 2019
    Date of Patent: December 21, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Richard K. Dodge, Timothy C. Langtry
  • DECODE CIRCUITRY COUPLED TO A MEMORY ARRAY
    Publication number: 20200090715
    Abstract: In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.
    Type: Application
    Filed: November 25, 2019
    Publication date: March 19, 2020
    Inventors: Richard K. Dodge, Timothy C. Langtry
  • Decode circuitry coupled to a memory array
    Patent number: 10573362
    Abstract: In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: February 25, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Richard K. Dodge, Timothy C. Langtry
  • DECODE CIRCUITRY COUPLED TO A MEMORY ARRAY
    Publication number: 20190066743
    Abstract: In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.
    Type: Application
    Filed: August 29, 2017
    Publication date: February 28, 2019
    Inventors: Richard K. Dodge, Timothy C. Langtry
  • Verify or read pulse for phase change memory and switch
    Patent number: 9230643
    Abstract: Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a first voltage for a first period of time. A threshold event for the phase change memory cell may be detected during a sense window. The sense window may close after the expiration of the first period of time for which the read pulses are applied.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: January 5, 2016
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Hernan Castro, Timothy C. Langtry, Richard Dodge, Ilya Karpov
  • VERIFY OR READ PULSE FOR PHASE CHANGE MEMORY AND SWITCH
    Publication number: 20150055408
    Abstract: Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a first voltage for a first period of time. A threshold event for the phase change memory cell may be detected during a sense window. The sense window may close after the expiration of the first period of time for which the read pulses are applied.
    Type: Application
    Filed: October 30, 2014
    Publication date: February 26, 2015
    Inventors: Hernan Castro, Timothy C. Langtry, Richard Dodge, IIya Karpov
  • Verify or read pulse for phase change memory and switch
    Patent number: 8891319
    Abstract: Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a first voltage for a first period of time. A threshold event for the phase change memory cell may be detected during a sense window. The sense window may close after the expiration of the first period of time for which the read pulses are applied.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: November 18, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Hernan Castro, Timothy C. Langtry, Richard Dodge, Ilya Karpov
  • Programming phase change memories using ovonic threshold switches
    Patent number: 8374022
    Abstract: A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: February 12, 2013
    Assignee: Intel Corporation
    Inventors: Timothy C. Langtry, Richard Dodge, Hernan Castro, Derchang Kau, Stephen Tang, Jeremy Hirst
  • VERIFY OR READ PULSE FOR PHASE CHANGE MEMORY AND SWITCH
    Publication number: 20120134202
    Abstract: Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices.
    Type: Application
    Filed: November 30, 2010
    Publication date: May 31, 2012
    Applicant: Micron Technology, Inc.
    Inventors: Hernan Castro, Timothy C. Langtry, Richard Dodge, IIya Karpov
  • Programming Phase Change Memories Using Ovonic Threshold Switches
    Publication number: 20110149628
    Abstract: A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state.
    Type: Application
    Filed: December 21, 2009
    Publication date: June 23, 2011
    Inventors: Timothy C. Langtry, Richard Dodge, Hernan Castro, Derchang Kau, Stephen Tang, Jeremy Hirst