Abstract: According to one aspect of the present disclosure, a system for providing shade on a surface is provided. The system may include a frame configured to engage with the surface. The system may include a canopy that includes a suspension end couplable to the frame, a trailing end extending away from the frame, and a first fastener. The system may include a first cord having a first frame end couplable to the first fastener and an first anchor end couplable to an anchor. The first frame end may be couplable to the first fastener. The system may include a second cord having a second frame end couplable to the first fastener and a first wind-indicator end couplable to a first wind indicator. The first wind indicator couplable may extend away from the surface at a second angle to indicate a wind direction.

Abstract: In accordance with an embodiment, an RF amplifier includes: a first amplifier including a first transistor coupled to a first supply node configured to provide a first supply voltage, the first transistor having a first device periphery; a second amplifier including a second transistor coupled to a second supply node configured to provide a second supply voltage higher than the first supply voltage, the second transistor having a second device periphery; and a combining network coupled to an output of the first amplifier, an output of the second amplifier, and an RF output port. The first device periphery, the first supply voltage, the second device periphery, and the second supply voltage are configured to maintain a junction temperature ratio of between 0.3 and 1.0, and the junction temperature ratio is a ratio of a temperature of the first amplifier to a temperature of the second amplifier.

Abstract: A semiconductor package includes a mounting platform including an electrically insulating substrate and structured metallization layers, a semiconductor die mounted on an upper surface of the mounting platform, the semiconductor die including a first terminal and a second terminal, the first terminal disposed on a second surface of the semiconductor die that faces the mounting platform, the second terminal disposed on a first surface of the semiconductor die that faces away from the mounting platform, and a heat sink integrally formed in the mounting platform. The heat sink is directly underneath the semiconductor die and is thermally coupled to the semiconductor die. The heat sink extends from the upper surface of the mounting platform to a lower surface of the mounting platform. The heat sink includes one or more discrete metal blocks disposed within an opening formed in the electrically insulating substrate.

Abstract: A device is provided including a power transistor at an output node, which is coupled to a load terminal of the power transistor. A DC feed path is also provided. One or more discrete capacitors are coupled between the DC feed path and a reference potential. A first capacitor of the one or more discrete capacitors which is closest to the output node is a trench capacitor device.

Abstract: An amplifier circuit includes an input port, an output port, and a reference potential port, an RF amplifier device having an input terminal electrically coupled to the input port, an output terminal electrically coupled to the output port, and a reference potential terminal electrically coupled to the reference potential port. An impedance matching network is electrically connected to the output terminal, the reference potential port, and the output port. The impedance matching network includes a reactive efficiency optimization circuit that forms a parallel resonant circuit with a characteristic output impedance of the peaking amplifier at a center frequency of the fundamental frequency range. The impedance matching network includes a reactive frequency selective circuit that negates a phase shift of the RF signal in phase at the center frequency and exhibits a linear transfer characteristic in a baseband frequency range.

Abstract: Embodiments of an RF amplifier package include a body section comprising an upper surface having first and second opposing edge sides, and a die pad vertically recessed beneath the upper surface and comprising first and second opposing sides and a third side intersecting with the first and second sides. Embodiments also include first and second leads disposed on the upper surface, the second lead extending from adjacent to the second side to the second edge side; and a biasing strip connected to the second lead and disposed on the upper surface adjacent to the third side. Other embodiments include packaged RF amplifiers comprising an RF amplifier package, and an RF transistor mounted on the die pad and comprising: a control terminal electrically coupled to the first lead, a reference potential terminal directly facing and electrically connected to the die pad, and an output terminal electrically connected to the second lead.

Abstract: A phase shifter having a four port hybrid coupler is provided. The four port hybrid coupler has first and second input ports and first and second output ports. The four port hybrid coupler is configured to shift the phase of an RF signal as between the first and second input ports. First and second active semiconductor devices are connected to first and second output ports. The first and second active semiconductor devices are configured to change the phase shift of the RF signal as between the first and second input ports based upon a varying voltage.

Abstract: Exemplary impedance matching circuit for an amplifier device comprises a broadband impedance transformer configured to transform, over a fundamental frequency range, an impedance associated with an input port or an output port of the impedance matching circuit; and to transmit RF signals having a fundamental frequency within the fundamental frequency range. The impedance matching circuit also includes a phase shifter circuit configured to transmit, with substantially matched impedance, the RF signals having a fundamental frequency within the fundamental frequency range, and to phase-shift higher-order harmonics of the RF signals. The impedance matching circuit also includes a high-pass impedance transformer configured to match an impedance of the RF signals having a fundamental frequency within the fundamental frequency range; and to transmit, with low reflection, second-order harmonics of the RF signals.

Abstract: An amplifier circuit includes an input port, an output port, and a reference potential port, an RF amplifier device having an input terminal electrically coupled to the input port, an output terminal electrically coupled to the output port, and a reference potential terminal electrically coupled to the reference potential port. An impedance matching network is electrically connected to the output terminal, the reference potential port, and the output port. The impedance matching network includes a reactive efficiency optimization circuit that forms a parallel resonant circuit with a characteristic output impedance of the peaking amplifier at a center frequency of the fundamental frequency range. The impedance matching network includes a reactive frequency selective circuit that negates a phase shift of the RF signal in phase at the center frequency and exhibits a linear transfer characteristic in a baseband frequency range.

Abstract: An amplifier circuit includes an input port, an output port, and a reference potential port, an RF amplifier device having an input terminal electrically coupled to the input port, an output terminal electrically coupled to the output port, and a reference potential terminal electrically coupled to the reference potential port. An impedance matching network is electrically connected to the output terminal, the reference potential port, and the output port. The impedance matching network includes a reactive efficiency optimization circuit that forms a parallel resonant circuit with a characteristic output impedance of the peaking amplifier at a center frequency of the fundamental frequency range. The impedance matching network includes a reactive frequency selective circuit that negates a phase shift of the RF signal in phase at the center frequency and exhibits a linear transfer characteristic in a baseband frequency range.

Abstract: An amplifier circuit includes an input port, an output port, and a reference potential port, an RF amplifier device having an input terminal electrically coupled to the input port, an output terminal electrically coupled to the output port, and a reference potential terminal electrically coupled to the reference potential port. An impedance matching network is electrically connected to the output terminal, the reference potential port, and the output port. The impedance matching network includes a reactive efficiency optimization circuit that forms a parallel resonant circuit with a characteristic output impedance of the peaking amplifier at a center frequency of the fundamental frequency range. The impedance matching network includes a reactive frequency selective circuit that negates a phase shift of the RF signal in phase at the center frequency and exhibits a linear transfer characteristic in a baseband frequency range.

Abstract: A phase shifter having a four port hybrid coupler is provided. The four port hybrid coupler has first and second input ports and first and second output ports. The four port hybrid coupler is configured to shift the phase of an RF signal as between the first and second input ports. First and second active semiconductor devices are connected to first and second output ports.

Abstract: Exemplary impedance matching circuit for an amplifier device comprises a broadband impedance transformer configured to transform, over a fundamental frequency range, an impedance associated with an input port or an output port of the impedance matching circuit; and to transmit RF signals having a fundamental frequency within the fundamental frequency range. The impedance matching circuit also includes a phase shifter circuit configured to transmit, with substantially matched impedance, the RF signals having a fundamental frequency within the fundamental frequency range, and to phase-shift higher-order harmonics of the RF signals. The impedance matching circuit also includes a high-pass impedance transformer configured to match an impedance of the RF signals having a fundamental frequency within the fundamental frequency range; and to transmit, with low reflection, second-order harmonics of the RF signals.

Abstract: Embodiments of an RF amplifier package include a body section comprising an upper surface having first and second opposing edge sides, and a die pad vertically recessed beneath the upper surface and comprising first and second opposing sides and a third side intersecting with the first and second sides. Embodiments also include first and second leads disposed on the upper surface, the second lead extending from adjacent to the second side to the second edge side; and a biasing strip connected to the second lead and disposed on the upper surface adjacent to the third side. Other embodiments include packaged RF amplifiers comprising an RF amplifier package, and an RF transistor mounted on the die pad and comprising: a control terminal electrically coupled to the first lead, a reference potential terminal directly facing and electrically connected to the die pad, and an output terminal electrically connected to the second lead.

Abstract: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.

Abstract: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.

Abstract: A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.

Abstract: An RF semiconductor amplifier package includes a flange shaped body section, an electrically conductive die pad centrally located on the body section, and an electrically insulating window frame disposed on an upper surface of the body section. A first electrically conductive lead is disposed on the window frame adjacent to a first side of the die pad and extends away from the first side of the die pad towards a first edge side of the body section. A second electrically conductive lead is disposed on the window frame adjacent to a second side of the die pad and extends away from the second side of the die pad towards a second edge side of the body section. A first electrically conductive biasing strip is disposed on the window frame, continuously connected to the second lead, and extends along and a third side of the die pad.

Abstract: An amplifier circuit includes an RF amplifier that is configured to amplify an RF signal between a first terminal and a second terminal across an RF frequency range. The amplifier circuit includes a multi-stage impedance matching network having a broadband impedance transformer, a phase shifter, and a high-pass impedance transformer connected in series with one another between a first port of the amplifier circuit and the first terminal. The broadband impedance transformer provides impedance transformation in the RF frequency range. The phase shifter shifts a phase output port reflection coefficient in a second order harmonic frequency range that overlaps with a second order harmonic of the fundamental RF frequency. The high-pass impedance transformer transmits an RF signal in the RF frequency range while providing impedance transformation in the RF frequency range and transmits RF signals in the second order harmonic frequency range with low impedance.

Abstract: A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.