Abstract: There is provided a reduced current input buffer circuit. More specifically, in one embodiment, there is provided an input buffer circuit comprising an input buffer that is adapted to draw an operating current, means for providing a first portion of the operating current to the input buffer, and means for providing a second portion of the operating current to the input buffer if the input buffer is expecting data.

Abstract: In a multi-bank memory system such as a synchronous dynamic random access memory (SDRAM), a method of writing data to the banks is provided. This method allows for writing to any number of banks. More particularly, this method allows for writing to a selected number of banks between one and all banks. In addition, the method retains the discrete nature of the selected banks by allowing any row in each bank to be accessed regardless of the rows activated in other banks. As a result, rows of different memory banks that are intended to store similar data may be accessed simultaneously for purposes of writing the data in test and non-test modes. This allows for quicker writing to the SDRAM without the errors that may be created by other fast writing modes, such as data compression.

Abstract: In a memory device, an on-die register is provided that is configured to store a row address as well as a column address of a memory cell that fails a test. Storing the row address frees testing from being limited to activating at one time only rows related to a common redundant segment. Storing the row address also guides repair using segmented redundancy. As an addition or alternative, information may be stored in an anti-fuse bank that is designed to provide access to a redundant cell but has not yet enabled access to that cell. If the information stored in the anti-fuse bank relates to the failure of the redundant cell, such information may be used to avoid repairing with that redundant cell.

Abstract: Some embodiments of the invention include an input buffer having differential amplifiers for receiving input signals to generate an output signal. The input buffer operates with a relatively low supply voltage and a relatively wide range of input signal levels while improving the symmetry between rising and falling signal transitions of the output signal. Additional apparatus, systems, and methods are disclosed.

Abstract: As part of anti-fuse circuitry for a memory device, a preferred exemplary embodiment of the current invention provides a direct connection between an anti-fuse and a contact pad used to provide voltage to that anti-fuse. The contact pad also serves as a voltage source for at least one other part of the memory device. At least one circuit coupled to the anti-fuse is temporarily isolated from it in the event that a voltage present at the pad would damage the circuit or cause the circuit to improperly read the status of the anti-fuse. The contact pad is available during a probe stage of the in-process memory device, but once the device is packaged, access to that contact pad is prevented. At the back end of the production process, the anti-fuse may be accessed through a second pad, whose electrical communication with the anti-fuse is regulated.

Abstract: Some embodiments of the invention include an input buffer having multiple differential amplifiers for receiving input signals to generate an output signal. The input buffer operates in a relatively low supply voltage and a relatively wide range of signal levels of the input signals while improving the symmetry between rising and falling signal transitions of the output signal. Other embodiments are described and claimed.

Abstract: A preferred exemplary embodiment of the current invention concerns memory testing and repair processes, wherein circuitry is provided to allow on-chip comparison of stored data and expected data. The on-chip comparison allows the tester to transmit in a parallel manner the expected data to a plurality of chips. In a preferred embodiment, at most one address—and only the column address—corresponding to a failed memory cell is stored in an on-chip address register at one time, with each earlier failed addresses being cleared from the register in favor of a subsequent failed address. Another bit—the “fail flag” bit—is stored in the address register to indicate that a failure has occurred. If the fail flag is present in a chip, that chip is repaired by electrically associating the column address with redundant memory cells rather than the original memory cells. Data concerning available redundant cells may be stored in at least one on-chip redundancy register.

Abstract: A method and apparatus for reducing the duty cycle distortion of a periodic signal in high speed devices. More specifically, there is provided a device having a switching point modulation circuit coupled to input logic and configured to modulate the periodic output signal from the input logic such that the periodic output signal is centered about a known voltage signal, such as a switching point voltage signal.

Abstract: There is provided a reduced current input buffer circuit. More specifically, in one embodiment, there is provided an input buffer circuit comprising an input buffer that is adapted to draw an operating current, means for providing a first portion of the operating current to the input buffer, and means for providing a second portion of the operating current to the input buffer if the input buffer is expecting data.

Abstract: An isolation circuit includes a first pad adapted to receive a control signal and a second pad adapted to receive another signal. A third pad is coupled to a microelectronic die and a device is provided to transfer the other signal from the second pad to the third pad in response to the control signal.

Abstract: A method used to form a semiconductor device comprises providing first and second circuit portions having first and second pad portions respectively. The second circuit portion is electrically isolated from the first circuit portion. The first and second pad portions are then electrically connected, for example with a ball bond or a wire bond, to electrically couple the first and second circuit portions. In various embodiments the semiconductor device will not function until the pad portions are electrically coupled, and in other embodiments the functionality of the device may be selectively controlled by connecting selected pad portions from a plurality of pad portions. Isolating the first and second circuit portions allows electrical operations such as antifuse programming to be carried out without adversely affecting related circuits. Once electrical operations are completed, the isolated circuit portions are electrically coupled to provide a complete circuit.

Abstract: An apparatus and method using a reduced number of fuses for enabling redundant memory blocks in a semiconductor memory is disclosed. In one embodiment, a redundancy selection module may be configured using selection fuses, wherein each selection fuse selects a pair of repair modules. In another embodiment, a redundancy selection module may be configured using selection fuses, wherein each selection fuse may select a power of two (i.e., 1, 2, 4, 8, etc.) number of repair modules. Each repair module includes fuses programmed with a selected address, such that the repair module may respond when an address input matches the selected address. However, the Least Significant Bit (LSB) is uninvolved in the address programming. Instead, the LSB is compared to the values of the selection fuses. As a result, repair modules select a redundant memory block based on a combination of the selected address comparison and the separate LSB comparison.

Abstract: An apparatus and method using a reduced number of nonvolatile programming elements for enabling redundant memory blocks in a semiconductor memory is disclosed. A redundancy selection module may be configured using N fuses to configure and select 2N-1 repair modules. Programming fuses effectively separates the repair modules into two sets, those with an even address and those with an odd address. Each repair module contains fuses programmed with a selected address, such that the repair module may respond when an address input matches the selected address. However, the least significant bit is left out of the programming. As a result, repair modules in the even set respond to even addresses matching the selected address and repair modules in the odd set respond to odd addresses matching the selected address. Similar arrangements may be used to reduce the number of enable fuses and disable fuses required for each repair module.

Abstract: A method, apparatus, and system are provided for implementing a zero-enabled fuse system. An apparatus includes a first set of fuses for activating a first memory portion, and a second set of fuses for activating a second memory portion. The apparatus also includes a controller to control an operation of the first and second set of fuses. The controller is adapted to determine whether a zero address memory location relating to the first memory portion is to be activated based upon an enable fuse. The controller is adapted to also perform a check to determine whether the second set of fuses has been previously activated.

Abstract: A method used to form a semiconductor device comprises providing first and second circuit portions having first and second pad portions respectively. The second circuit portion is electrically isolated from the first circuit portion. The first and second pad portions are then electrically connected, for example with a ball bond or a wire bond, to electrically couple the first and second circuit portions. In various embodiments the semiconductor device will not function until the pad portions are electrically coupled, and in other embodiments the functionality of the device may be selectively controlled by connecting selected pad portions from a plurality of pad portions. Isolating the first and second circuit portions allows electrical operations such as antifuse programming to be carried out without adversely affecting related circuits. Once electrical operations are completed, the isolated circuit portions are electrically coupled to provide a complete circuit.

Abstract: A method and apparatus for reducing the duty cycle distortion of a periodic signal in high speed devices. More specifically, there is provided a device having a switching point modulation circuit coupled to input logic and configured to modulate the periodic output signal from the input logic such that the periodic output signal is centered about a known voltage signal, such as a switching point voltage signal.

Abstract: An apparatus and method using a reduced number of nonvolatile programming elements for enabling redundant memory blocks in a semiconductor memory is disclosed. A redundancy selection module may be configured using N fuses to configure and select 2N?1 repair modules. Programming fuses effectively separates the repair modules into two sets, those with an even address and those with an odd address. Each repair module contains fuses programmed with a selected address, such that the repair module may respond when an address input matches the selected address. However, the least significant bit is left out of the programming. As a result, repair modules in the even set respond to even addresses matching the selected address and repair modules in the odd set respond to odd addresses matching the selected address. Similar arrangements may be used to reduce the number of enable fuses and disable fuses required for each repair module.

Abstract: An apparatus and method using a reduced number of fuses for enabling redundant memory blocks in a semiconductor memory is disclosed. In one embodiment, a redundancy selection module may be configured using selection fuses, wherein each selection fuse selects a pair of repair modules. In another embodiment, a redundancy selection module may be configured using selection fuses, wherein each selection fuse may select a power of two (i.e., 1, 2, 4, 8, etc.) number of repair modules. Each repair module includes fuses programmed with a selected address, such that the repair module may respond when an address input matches the selected address. However, the Least Significant Bit (LSB) is uninvolved in the address programming. Instead, the LSB is compared to the values of the selection fuses. As a result, repair modules select a redundant memory block based on a combination of the selected address comparison and the separate LSB comparison.

Abstract: As part of anti-fuse circuitry for a memory device, a preferred exemplary embodiment of the current invention provides a direct connection between an anti-fuse and a contact pad used to provide voltage to that anti-fuse. The contact pad also serves as a voltage source for at least one other part of the memory device. At least one circuit coupled to the anti-fuse is temporarily isolated from it in the event that a voltage present at the pad would damage the circuit or cause the circuit to improperly read the status of the anti-fuse. The contact pad is available during a probe stage of the in-process memory device, but once the device is packaged, access to that contact pad is prevented. At the back end of the production process, the anti-fuse may be accessed through a second pad, whose electrical communication with the anti-fuse is regulated.

Abstract: A method and apparatus for improving time between row address latching and column address latching (tRCD) by allowing the pull-up of the IO lines during a READ burst to end upon the firing of a column access signal rather than waiting for the next clock signal of the READ operation. A latch is set during the active command in order to set a node voltage which allows the IO pull-up signal to end upon the firing of the column access signal. The invention allows improvement in tRCD parameter, and allows digit line pairs to separate without unwanted line sharing with the IO lines prior to reading of the first bit of a data burst. The result is a more accurate and error-free read of a first bit of data during a READ sequence.