Patents by Inventor Timothy D. Aust

Timothy D. Aust has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9881729
    Abstract: A wideband power amplifier module includes a plurality of switch mode amplifiers and a plurality of impedance amplifier modules. Each switch mode amplifier includes an input to receive an input signal, and an RF output to output an RF power signal. The switch mode amplifier includes at least one semiconductor switch formed from gallium nitride (GaN). Each impedance amplifier module includes an output electrically connected to the RF output of a respective switch mode amplifier. The impedance amplifier module is configured to inject at least one impedance control signal to each RF output.
    Type: Grant
    Filed: September 1, 2015
    Date of Patent: January 30, 2018
    Assignee: RAYTHEON COMPANY
    Inventor: Timothy D. Aust
  • Publication number: 20150371770
    Abstract: A wideband power amplifier module includes a plurality of switch mode amplifiers and a plurality of impedance amplifier modules. Each switch mode amplifier includes an input to receive an input signal, and an RF output to output an RF power signal. The switch mode amplifier includes at least one semiconductor switch formed from gallium nitride (GaN). Each impedance amplifier module includes an output electrically connected to the RF output of a respective switch mode amplifier. The impedance amplifier module is configured to inject at least one impedance control signal to each RF output.
    Type: Application
    Filed: September 1, 2015
    Publication date: December 24, 2015
    Inventor: Timothy D. Aust
  • Patent number: 9160289
    Abstract: A wideband power amplifier module includes a plurality of switch mode amplifiers and a plurality of impedance amplifier modules. Each switch mode amplifier includes an input to receive an input signal, and an RF output to output an RF power signal. The switch mode amplifier includes at least one semiconductor switch formed from gallium nitride (GaN). Each impedance amplifier module includes an output electrically connected to the RF output of a respective switch mode amplifier. The impedance amplifier module is configured to inject at least one impedance control signal to each RF output.
    Type: Grant
    Filed: May 10, 2013
    Date of Patent: October 13, 2015
    Assignee: RAYTHEON COMPANY
    Inventor: Timothy D. Aust
  • Publication number: 20140333379
    Abstract: A wideband power amplifier module includes a plurality of switch mode amplifiers and a plurality of impedance amplifier modules. Each switch mode amplifier includes an input to receive an input signal, and an RF output to output an RF power signal. The switch mode amplifier includes at least one semiconductor switch formed from gallium nitride (GaN). Each impedance amplifier module includes an output electrically connected to the RF output of a respective switch mode amplifier. The impedance amplifier module is configured to inject at least one impedance control signal to each RF output.
    Type: Application
    Filed: May 10, 2013
    Publication date: November 13, 2014
    Applicant: Raytheon Company
    Inventor: Timothy D. Aust