Abstract: Powder drug compositions exhibiting improved flow properties are manufactured by spraying a suspension of surface-modified nanoparticles having an average particle size diameter of less than 100 nm in a dryable liquid carrier onto particles of a powder ingredient of a drug composition. The liquid carrier is rapidly dried so as to leave the nanoparticles on the powder. Other ingredients of the powder drug composition can also be added.

Abstract: A process comprises (a) combining (1) at least one base and (2) at least one metal carboxylate salt comprising (i) a metal cation selected from metal cations that form amphoteric metal oxides or oxyhydroxides and (ii) a lactate or thiolactate anion, or metal carboxylate salt precursors comprising (i) at least one metal salt comprising the metal cation and a non-interfering anion and (ii) lactic or thiolactic acid, a lactate or thiolactate salt of a non-interfering, non-metal cation, or a mixture thereof; and (b) allowing the base and the metal carboxylate salt or metal carboxylate salt precursors to react.

Abstract: A composition comprises surface-modified nanoparticles of at least one amphoteric metal oxide or oxyhydroxide. The nanoparticles bear, on at least a portion of their surfaces, a surface modification comprising (i) at least one surface modifier selected from lactate, thiolactate, and mixtures thereof, and (ii) at least one surface modifier selected from halide, nitrate, acetate, carbonate, formate, propionate, sulfate, bromate, perchlorate, tribromoacetate, trichloroacetate, trifluoroacetate, carboxylate comprising from one to about four alkyleneoxy moieties, chlorate, and mixtures thereof.

Abstract: A process comprises (a) combining (1) at least one base and (2) at least one metal carboxylate salt comprising (i) a metal cation selected from metal cations that form amphoteric metal oxides or oxyhydroxides and (ii) a carboxylate anion comprising from one to four alkyleneoxy moieties, or metal carboxylate salt precursors comprising (i) at least one metal salt comprising the metal cation and a non-interfering anion and (ii) at least one carboxylic acid comprising from one to four alkyleneoxy moieties, at least one salt of the carboxylic acid and a non-interfering, non-metal cation, or a mixture thereof; and (b) allowing the base and the metal carboxylate salt or metal carboxylate salt precursors to react.

Abstract: A method of making a thin film transistor comprises (a) solution depositing a dispersion comprising semiconducting metal oxide nanoparticles onto a substrate, (b) sintering the nanoparticles to form a semiconductor layer, and (c) optionally subjecting the resulting semiconductor layer to post-deposition processing.

Abstract: A method of making an electronic device by (a) depositing a substantially nonfluorinated polymeric layer onto a dielectric layer using a plasma-based deposition technique selected from the group consisting of (i) plasma polymerizing a precursor comprising monomers, and (ii) sputtering from a target comprising one or more polymers of interpolymerized units of monomers, the monomers being selected from the group consisting of aromatic monomers, substantially hydrocarbon monomers, and combinations thereof; and (b) depositing an organic semiconductor layer adjacent to said polymeric layer.

Abstract: A method of making an electronic device by (a) depositing a substantially nonfluorinated polymeric layer onto a dielectric layer using a plasma-based deposition technique selected from the group consisting of (i) plasma polymerizing a precursor comprising monomers, and (ii) sputtering from a target comprising one or more polymers of interpolymerized units of monomers, the monomers being selected from the group consisting of aromatic monomers, substantially hydrocarbon monomers, and combinations thereof; and (b) depositing an organic semiconductor layer adjacent to said polymeric layer.

Abstract: Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Abstract: Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Abstract: Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Abstract: Silicon substrates having Si—H bonds are chemically modified using a fluorinated olefin having the formula: wherein m is an integer greater than or equal to 1; n is an integer greater than or equal to 0; Z is a divalent linking group; and Rf is a highly fluorinated organic group.

Abstract: An organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The semiconductor layer comprises a material selected from an acene, substituted with at least one electron-donating group, halogen atom, or a combination thereof, or a benzo-annellated acene or polybenzo-annellated acene, which optionally is substituted with at least one electron-donating group, halogen atom, or a combination thereof. Methods of making a thin film transistor and an integrated circuit comprising thin film transistors.

Abstract: Silicon substrates having Si—H bonds are chemically modified using a fluorinated olefin having the formula: 1

Abstract: Provided is an organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The semiconductor layer comprises a material selected from an acene, substituted with at least one electron-donating group, halogen atom, or a combination thereof, or a benzo-annellated acene or polybenzo-annellated acene, which optionally is substituted with at least one electron-donating group, halogen atom, or a combination thereof.

Abstract: Provided is an organic thin film transistor comprising a siloxane polymeric layer interposed between a gate dielectric and an organic semiconductor layer. An integrated circuit comprising thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Abstract: Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Abstract: Provided is an organic thin film transistor comprising a siloxane polymeric layer interposed between a gate dielectric and an organic semiconductor layer. An integrated circuit comprising thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Abstract: Provided is an organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer.