Abstract: A Forward Error Correction (FEC) code compatible with the self-synchronized scrambler used by the 64B/66B encoding standard for transmission on Serializer/Deserializer (SerDes) communications channel links. The FEC code allows encoding and decoding to occur before and after scrambling, respectively, so as to preserve the properties of the scrambling operation on the transmitted signal. The code allows the correction of any single transmission error in spite of the multiplication by three of all transmission errors due to the 64B/66B scrambling process. A Hamming code is combined with a Bit Interleaved Parity code of degree n (BIP-n). These two codes provide for protection both for an error anywhere in the maximum length of the packet as well as for an error replicated two or three times by the descrambling process. All single bit errors, whether multiplied or not, have unique syndromes and are therefore easily correctable.

Abstract: A Forward Error Correction (FEC) code compatible with the self-synchronized scrambler used by the 64B/66B encoding standard for transmission on Serializer/Deserializer (SerDes) communications channel links. The FEC code allows encoding and decoding to occur before and after scrambling, respectively, so as to preserve the properties of the scrambling operation on the transmitted signal. The code allows the correction of any single transmission error in spite of the multiplication by three of all transmission errors due to the 64B/66B scrambling process. A Hamming code is combined with a Bit Interleaved Parity code of degree n (BIP-n). These two codes provide for protection both for an error anywhere in the maximum length of the packet as well as for an error replicated two or three times by the descrambling process. All single bit errors, whether multiplied or not, have unique syndromes and are therefore easily correctable.

Abstract: A memory subsystem with a memory bus and a memory assembly. The memory bus includes multiple bitlanes. The memory assembly is in communication with the memory bus and includes instructions for receiving an error code correction (ECC) word in multiple packets via the memory bus. The ECC word includes data bits and ECC bits arranged into multiple multi-bit ECC symbols. Each of the ECC symbols is associated with one of the bitlanes on the memory bus. The memory assembly also includes instructions for utilizing one of the ECC symbols to perform error detection and correction for the bits in the ECC word received via the bitlane associated with the ECC symbol.

Abstract: A memory subsystem with a memory bus and a memory assembly. The memory bus includes multiple bitlanes. The memory assembly is in communication with the memory bus and includes instructions for receiving an error code correction (ECC) word in multiple packets via the memory bus. The ECC word includes data bits and ECC bits arranged into multiple multi-bit ECC symbols. Each of the ECC symbols is associated with one of the bitlanes on the memory bus. The memory assembly also includes instructions for utilizing one of the ECC symbols to perform error detection and correction for the bits in the ECC word received via the bitlane associated with the ECC symbol.

Abstract: A memory subsystem with a memory bus and a memory assembly. The memory bus includes multiple bitlanes. The memory assembly is in communication with the memory bus and includes instructions for receiving an error code correction (ECC) word in multiple packets via the memory bus. The ECC word includes data bits and ECC bits arranged into multiple multi-bit ECC symbols. Each of the ECC symbols is associated with one of the bitlanes on the memory bus. The memory assembly also includes instructions for utilizing one of the ECC symbols to perform error detection and correction for the bits in the ECC word received via the bitlane associated with the ECC symbol.

Abstract: A method and system is presented for correcting a data error in a primary Dynamic Random Access Memory (DRAM) in a Dual In-line Memory Module (DIMM). Each DRAM has a left half (for storing bits 0:3) and a right half (for storing bits 4:7). A determination is made as to whether the data error was in the left or right half of the primary DRAM. The half of the primary DRAM in which the error occurred is removed from service. All subsequent reads and writes for data originally stored in the primary DRAM's defective half are made to a half of a spare DRAM in the DIMM, while the DRAM's non-defective half continues to be used for subsequently storing data.

Abstract: A memory subsystem with a memory bus and a memory assembly. The memory bus includes multiple bitlanes. The memory assembly is in communication with the memory bus and includes instructions for receiving an error code correction (ECC) word in multiple packets via the memory bus. The ECC word includes data bits and ECC bits arranged into multiple multi-bit ECC symbols. Each of the ECC symbols is associated with one of the bitlanes on the memory bus. The memory assembly also includes instructions for utilizing one of the ECC symbols to perform error detection and correction for the bits in the ECC word received via the bitlane associated with the ECC symbol.

Abstract: A memory subsystem for providing a bus speed multiplier. The memory subsystem includes one or more memory modules operating at a memory module data rate. The memory subsystem also includes a memory controller and one or more memory busses. The memory busses operate at four times the memory module data rate. The memory controller and the memory modules are interconnected by a packetized multi-transfer interface via the memory busses.

Abstract: A memory subsystem that includes segment level sparing. The memory subsystem includes a cascaded interconnect system with segment level sparing. The cascaded interconnect system includes two or more memory assemblies and a memory bus. The memory bus includes multiple segments and the memory assemblies are interconnected via the memory bus.