Abstract: A method is provided for making a device comprising aligned semiconducting nanoparticles and a receptor substrate comprising the steps of: a) aligning a plurality of first semiconducting nanoparticles; b) depositing the aligned first semiconducting nanoparticles on a first donor sheet; and c) transferring at least a portion of the aligned first semiconducting nanoparticles to a receptor substrate by the application of laser radiation. Typically, the semiconducting nanoparticles are inorganic semiconducting nanoparticles. The alignment step may be accomplished by any suitable method, typically including: 1) alignment by capillary flow in or on a textured or microchanneled surface; 2) alignment by templating on a self-assembled monolayer (SAM); 3) alignment by templating on a textured polymer surface; or 4) alignment by mixing in a composition that includes nematic liquid crystals followed by shear orientation of the nematic liquid crystals.

Abstract: A method of making a thin film transistor comprises (a) solution depositing a dispersion comprising semiconducting metal oxide nanoparticles onto a substrate, (b) sintering the nanoparticles to form a semiconductor layer, and (c) optionally subjecting the resulting semiconductor layer to post-deposition processing.

Abstract: A method of patterning surface modification by (a) positioning a repositionable aperture mask in proximity to a substrate, and (b) selectively exposing a portion of the substrate to a surface modification treatment, wherein the exposed portion is defined by one or more apertures in the aperture mask.

Abstract: A method of making an electronic device by (a) depositing a substantially nonfluorinated polymeric layer onto a dielectric layer using a plasma-based deposition technique selected from the group consisting of (i) plasma polymerizing a precursor comprising monomers, and (ii) sputtering from a target comprising one or more polymers of interpolymerized units of monomers, the monomers being selected from the group consisting of aromatic monomers, substantially hydrocarbon monomers, and combinations thereof; and (b) depositing an organic semiconductor layer adjacent to said polymeric layer.

Abstract: Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Abstract: Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.