Abstract: A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 ?m. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.

Abstract: A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 ?m. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.

Abstract: A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 ?m. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.

Abstract: A method for inspecting a semiconductor wafer fabricated for image sensing operation that has had a transparent protective tape layer applied to a front or active wafer surface. The method includes quantifying chip defects in the image sensor wafer that lie under the protective layer using automatic disposition equipment.

Abstract: A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 ?m. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.

Abstract: A method for repairing molds for collapsible connections utilizing a femtosecond laser pulse length. Also provided is a laser source for implementing a multistep profile repair process for the removal of excess material in C4 molds by utilizing the femtosecond laser pulse lengths.

Abstract: A method for inspecting a semiconductor wafer fabricated for image sensing operation that has had a transparent protective tape layer applied to a front or active wafer surface. The method includes quantifying chip defects in the image sensor wafer that lie under the protective layer using automatic disposition equipment.

Abstract: The current invention performs short pulse laser ablation of clear defect regions on a mask prior to patching the clear defect regions. The short-pulse laser ablation removes any residue that absorbs light. Thus, the ablation completely cleans the surface of the clear defect regions, meaning that any patches of the surface will better adhere to the surface of the mask. This is particularly important during those situations where a later etch of a conductive surface added to the mask creates a solvent because the etchant interacts with residue on the mask, and wherein the solvent attacks the patch material at the patch material's interface.

Abstract: The present invention provides various methods for eliminating printable alternating phase shift defects from an alternating phase shift mask without the need of using a trim mask. Specifically, unwanted printable defects are removed by employing methods which provide a gradual sloped region in the transparent or semi-transparent substrate which is formed in an area of the substrate opposite to that of the opaque image which is formed thereon.

Abstract: A reticle capturing system includes a reticle that defines a first recess extending into the reticle from a first edge of the reticle and a second recess extending into the reticle from a second edge of the reticle. The reticle capturing system also includes a first finger selectively extending into the first recess and a second finger selectively extending into the second recess. The first and second fingers may be tapered so that the reticle capturing system will be self centering. The reticle capturing system may also include a third recess defined by the reticle and a third finger selectively extending into a recess. A method for capturing a reticle includes providing a reticle that defines a recess at an edge of the reticle and inserting the finger into the recess. The method may further include inserting a second finger into a second recess.

Abstract: The present invention provides various methods for eliminating printable alternating phase shift defects from an alternating phase shift mask without the need of using a trim mask. Specifically, unwanted printable defects are removed by employing methods which provide a gradual sloped region in the transparent or semi-transparent substrate which is formed in an area of the substrate opposite to that of the opaque image which is formed thereon.

Abstract: A method and apparatus are provided for repairing clear defects in photomasks such as attenuated photomasks having a patterned MoSi film on a glass substrate. The method and apparatus use an energy source in the form of an energy beam to undercut the sidewalls of the clear defect forming a clear defect having angled sidewalls. A repair material is then deposited in the angled opening to repair the clear defect. In a preferred embodiment, two repair steps are used with the first repair step using a first repair material to deposit a first repair material on the angled sidewalls of the clear defect and a second step using a second repair material to contact the first repair material and to fill the remainder of the clear defect opening. An apparatus for repairing clear defects and photomasks repaired by the method and apparatus of the invention is also provided.

Abstract: The present invention discloses a method of controlling the precise removal of unwanted material from a light transmittable substrate for isolating and removing defects from a surface of the light transmittable substrate and for direct writing of a reticle or photomask, and the resultant reticle or photomask. The depth of ion implantation of a light absorbing material such as gallium, arsenic, boron, phosphorus, antimony or combinations thereof into the defect and/or the areas surrounding the defect on the light transmittable substrate controls the depth of material removed from the substrate. Unexpectedly, the use of laser ablation at pulses not greater than 10−5 seconds to remove the unwanted material provides precision removal while preventing heat damage to the substrate.

Abstract: A reticle SMIF pod for in situ orientation comprises a pod door. A pod cover is removably receivable on the door to define an interior space. A nest assembly has a plate resting on the pod door in the interior space and a core extending downwardly from the plate through an opening in the pod door. The plate is rotatably mounted on the pod door to selectively orient a reticle supported on the plate, in use. Alignment legs or tabs align the plate relative to the pod door in one of plural orthogonal positions.

Abstract: A method and apparatus for repairing transparent defects in a transfer layer circuit pattern in the process of fabricating an attenuated mask is provided comprising forming a sacrificial removable layer on the transfer layer including the part of the transfer layer having a transparent defect and then forming a patch to cover the transparent defect. After applying the sacrificial removable layer and patch, the sacrificial removable layer and unwanted exposed attenuated mask material is removed leaving the patch having an undercoating of sacrificial removable layer in the transparent defect region. The undercoat sacrificial removable layer is then at least partially etched and the patch and sacrificial layer removed by a lift off procedure. The transfer layer is then removed leaving the attenuated mask having the desired circuit pattern on the surface of the transparent mask substrate. Attenuated masks made using the method and apparatus of the invention are also provided.

Abstract: A method and apparatus for repairing transparent defects in a transfer layer circuit pattern in the process of fabricating an attenuated mask is provided comprising forming a sacrificial removable layer on the transfer layer including the part of the transfer layer having a transparent defect and then forming a patch to cover the transparent defect. After applying the sacrificial removable layer and patch, the sacrificial removable layer and unwanted exposed attenuated mask material is removed leaving the patch having an undercoating of sacrificial removable layer in the transparent defect region. The undercoat sacrificial removable layer is then at least partially etched and the patch and sacrificial layer removed by a lift off procedure. The transfer layer is then removed leaving the attenuated mask having the desired circuit pattern on the surface of the transparent mask substrate. Attenuated masks made using the method and apparatus of the invention are also provided.

Abstract: A method of repairing defects on masks includes the step of providing a coating on the mask to prevent damage to clear regions of the mask from laser ablation splatter, laser ablation caused quartz pitting, laser deposition staining, and FIB caused gallium staining. The coating is a metal, a polymer, or a carbon material. The coating is formed on clear regions of the mask as well as either over or under the light absorbing material of the mask. A coating comprising a thin copper layer significantly improves imaging with the ion beam while protecting clear regions of the mask from FIB stain. A coating formed of a photosensitive polymer is used to etch opaque defects. While wanted opaque regions adjacent an opaque defect are also etched in this etch step, these created clear defects are then repaired in a subsequent FIB deposition step while a copper coating protects adjacent clear regions from FIB stain.

Abstract: A method of repairing defects on masks includes the step of providing a coating on the mask to prevent damage to clear regions of the mask from laser ablation splatter, laser ablation caused quartz pitting, laser deposition staining, and FIB caused gallium staining. The coating is a metal, a polymer, or a carbon material. The coating is formed on clear regions of the mask as well as either over or under the light absorbing material of the mask. A coating comprising a thin copper layer significantly improves imaging with the ion beam while protecting clear regions of the mask from FIB stain. A coating formed of a photosensitive polymer is used to etch opaque defects. While wanted opaque regions adjacent an opaque defect are also etched in this etch step, these created clear defects are then repaired in a subsequent FIB deposition step while a copper coating protects adjacent clear regions from FIB stain.

Abstract: A method of repairing defects on masks includes the step of providing a coating on the mask to prevent damage to clear regions of the mask from laser ablation splatter, laser ablation caused quartz pitting, laser deposition staining, and FIB caused gallium staining. The coating is a metal, a polymer, or a carbon material. The coating is formed on clear regions of the mask as well as either over or under the light absorbing material of the mask. A coating comprising a thin copper layer significantly improves imaging with the ion beam while protecting clear regions of the mask from FIB stain. A coating formed of a photosensitive polymer is used to etch opaque defects. While wanted opaque regions adjacent an opaque defect are also etched in this etch step, these created clear defects are then repaired in a subsequent FIB deposition step while a copper coating protects adjacent clear regions from FIB stain.

Abstract: A patterned mask and method of forming a patterned mask over a substrate, comprising forming a first resist layer over the substrate, forming a second resist layer over the first resist layer, patterning the first resist using energy selective to the first resist layer to form a first patterned resist, and patterning the second resist using energy selective to the second resist layer to form a second patterned resist, wherein the first patterned resist and the second patterned resist form the patterned mask.