Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

Abstract: An apparatus comprises a chemical precursor material formed into a pellet-shaped structure. The chemical precursor pellet may be used in a chemical vapor deposition process or in an atomic layer deposition process. A method of making the chemical precursor pellets comprises introducing the chemical precursor material into a pellet-shaped mold, compressing the chemical precursor material within the mold into a chemical precursor pellet, and removing the chemical precursor pellet from the mold. Another method for making the chemical precursor pellets comprises introducing a chemical precursor material into a pellet-shaped mold, liquefying at least a portion of the chemical precursor material within the mold, solidifying the liquefied chemical precursor material within the mold to form a chemical precursor pellet, and removing the chemical precursor pellet from the mold.

Abstract: Increasing the number of successive pulses of oxidant before applying pulses of metal precursor may improve the quality of the resulting metal or rare earth oxide films. These metal or rare earth oxide films may be utilized for high dielectric constant gate dielectrics. In addition, pulsing the oxidant during the pre-stabilization period may be advantageous. Also, using more pulses of oxidant than the pulses of precursor may reduce chlorine concentration in the resulting films.

Abstract: A method and apparatus for generating a dopant gas species which is a reaction product of a metal and a gas reactive therewith to form the dopant gas species. A source mass of metal is provided and contacted with the reactive gas to yield a dopant gas species. The dopant gas species may be passed to a chemical vapor deposition reactor, or flowed to an ionization chamber to generate ionic species for ion implantation.