Abstract: A semiconductor component includes a substrate including a plurality of source/drain implants in the form of rows and a charge storage structure disposed over the substrate. The charge storage structure includes at least three continuous layers including a first silicon oxide layer, a silicon nitride layer disposed on the first silicon oxide layer, and a second silicon oxide layer disposed on the silicon nitride layer. The semiconductor component further includes a plurality of gate structures in the form of columns disposed over the charge structure and extending perpendicular to the rows and further includes a radiation protection layer disposed over the charge storage structure and the plurality of gate structures. The radiation protection layer includes a radiation resistant material including boron having an isotope composition of at least 90% boron-11.

Abstract: A system for capturing and sequestering carbon dioxide includes nanoparticles formed from alkali or alkali metal oxides or hydroxides, such as lithium oxide. Carbon-dioxide containing effluent gasses are exposed to the nanoparticles in fixed beds or fluidized beds, or in a co-flow configuration. The nanoparticle metal oxides are converted to metal carbonates. The nanoparticles can be recovered and the carbon dioxide release by exposing the nanoparticles to an oxygen containing atmosphere at high temperatures.

Abstract: A method of preparing a surface includes applying rough material layer to a surface of a support material. The rough material layer has a thickness in a range of 50 nm to 5 micrometers and a roughness Ra in a range of 10 nm to 1 micrometer. The method includes depositing a ceramic nitride or oxynitride over the rough material layer. In an example, a vehicle includes a structural support and a component comprising a support material defining an exterior facing surface and a ceramic nitride or oxynitride layer disposed over the support material.

Abstract: A turbine includes a central hub to rotate around an axis and a plurality of blades connected to the central hub. Each blade of the set of blades includes a support material having an exterior facing surface and a ceramic nitride coating disposed over the exterior facing surface. The ceramic nitride coating includes a semi-metal nitride, such as silicon nitride. The ceramic nitride coating can have a thickness in a range of 50 nm to 5 micrometers. A rough material layer can be disposed between the support material and the ceramic nitride coating.

Abstract: A method of testing for impurities includes directing an x-ray source toward a surface at an angle ? relative to the plane of the surface, the surface defined by a ceramic coating over a crystalline substrate; detecting x-ray fluorescent radiation emitted from the ceramic coating at an angle ? different from the angle ? and its supplementary angle; and comparing characteristics of the detected x-ray fluorescent radiation to characteristics associated with impurities.

Abstract: A method of preparing a surface includes applying rough material layer to a surface of a support material. The rough material layer has a thickness in a range of 50 nm to 5 micrometers and a roughness Ra in a range of 10 nm to 1 micrometer. The method includes depositing a ceramic nitride or oxynitride over the rough material layer. In an example, a vehicle includes a structural support and a component comprising a support material defining an exterior facing surface and a ceramic nitride or oxynitride layer disposed over the support material.

Abstract: A method of testing for impurities includes directing an x-ray source toward a surface at an angle ? relative to the plane of the surface, the surface defined by a ceramic coating over a crystalline substrate; detecting electromagnetic radiation emitted from the ceramic coating at an angle ? different from the angle ? and its supplementary angle; and comparing characteristics of the detected electromagnetic radiation to characteristics associated with impurities.