Abstract: Apparatus for analyzing a surface which, in use, is subject to drag, the apparatus comprising, a light source for generating light of at least one predetermined wavelength, a light source holder for holding and positioning the light source so as to direct it at the surface, a light detector for detecting reflected light from the surface and generating a signal in response thereto, a light detector holder for holding the light detector and positioning it so as to detect the reflected light, and a connector for connecting the light detector to a microprocessor to analyze the signal. Also disclosed is a method of analyzing a surface which, in use, is subject to drag.

Abstract: Apparatus for analysing a surface which, in use, is subject to drag, the apparatus comprising, a light source for generating light of at least one predetermined wavelength, a light source holder for holding and positioning the light source so as to direct it at the surface, a light detector for detecting reflected light from the surface and generating a signal in response thereto, a light detector holder for holding the light detector and positioning it so as to detect the reflected light, and a connector for connecting the light detector to a microprocessor to analyse the signal. Also disclosed is a method of analysing a surface which, in use, is subject to drag.

Abstract: Optical sensors comprising a fluidic channel through which fluid carrying magnetised beads may be passed, an optical source for illuminating fluid as is passes through the channel, a sensor for detecting fluorescence emitted by the beads when illuminated by the optical source, and magnet means arranged to temporarily capture and retain the magnetic beads at an assay point in the fluidic channel illuminated by the optical source and monitored by the sensor. Methods and further apparatus relating to the same.

Abstract: A method for detecting perturbation of a physical system from a reference state associated with a reference parameter (?0) to a perturbed state associated with a perturbed parameter (?) includes firstly deriving the reference parameter (?0). A reference vector (F) is then derived which describes the system's state at the reference parameter (?0). A measurement-related vector (Z) associated with a perturbed state of the system is then subtracted from the reference vector (F) to provide an error vector (E). The error vector members are summed and normalised by division of a summation of elements of a vector (F?) representing a derivative (f(?0??)e) of a reference itself represented by the reference vector (F), the derivative (f(?0??)e) being evaluated at the reference parameter (?0). This provides a result equal to the difference (??(?0) between the perturbed parameter (?) and the reference parameter (?0).

Abstract: This invention relates to a microchannel device comprising a microchannel and a liquid introduction means for introducing at least two liquids into the microchannel; characterised in that the introduction means comprises a pulse means for introducing each liquid into the microchannel in the form of a plurality of pulses, and for staggering the pulses of each liquid relative to the pulses of the other liquids. The device may be used to mix liquids for microfluidic applications.

Abstract: An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminum. The device includes a heavily doped region (28) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device (10) has a rectifying p-n junction within the porous silicon region (22).

Abstract: An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminum. The device includes a heavily doped region (28) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device (10) has a rectifying p-n junction within the porous silicon region (22).